Описание: This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.
Автор: Wynand Lambrechts; Saurabh Sinha Название: SiGe-based Re-engineering of Electronic Warfare Subsystems ISBN: 3319474022 ISBN-13(EAN): 9783319474021 Издательство: Springer Рейтинг: Цена: 20962.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides readers a thorough understanding of the applicability of new-generation silicon-germanium (SiGe) electronic subsystems for electronic warfare and defensive countermeasures in military contexts. It explains in detail the theoretical and technical background, and addresses all aspects of the integration of SiGe as an enabling technology for maritime, land, and airborne / spaceborne electronic warfare, including research, design, development, and implementation. The coverage is supported by mathematical derivations, informative illustrations, practical examples, and case studies. While SiGe technology provides speed, performance, and price advantages in many markets, to date only limited information has been available on its use in electronic warfare systems, especially in developing nations. Addressing that need, this book offers essential engineering guidelines that especially focus on the speed and reliability of current-generation SiGe circuits and highlight emerging innovations that help to ensure the sustainable long-term integration of SiGe into electronic warfare systems.
Автор: Ting Li; Ziv Liu Название: Outlook and Challenges of Nano Devices, Sensors, and MEMS ISBN: 3319508229 ISBN-13(EAN): 9783319508221 Издательство: Springer Рейтинг: Цена: 23757.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides readers with an overview of the design, fabrication, simulation, and reliability of nanoscale semiconductor devices, MEMS, and sensors, as they serve for realizing the next-generation internet of things.
Автор: Acar, Cenk Shkel, Andrei M. Название: Mems vibratory gyroscopes ISBN: 0387095357 ISBN-13(EAN): 9780387095356 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Offers a foundation in the theory and fundamental operational principles of micromachined vibratory rate gyroscopes, and introduces structural designs that provide inherent robustness against structural and environmental variations.
Автор: Pilar Gonzalez Ruiz; Kristin De Meyer; Ann Witvrou Название: Poly-SiGe for MEMS-above-CMOS Sensors ISBN: 9400767986 ISBN-13(EAN): 9789400767980 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 ГЇВїВЅ ГЇВїВЅm Cu-backend CMOS.
Описание: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).
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