Описание: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Автор: Viktor S. Vavilov Название: Effects of Radiation on Semiconductors ISBN: 1489927220 ISBN-13(EAN): 9781489927224 Издательство: Springer Рейтинг: Цена: 13060.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The effects of electromagnetic radiation and high-energy par- ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza- tion, i. e., the generation of excess charge carriers); and(b) dis- turbance of the periodic structure of the crystal, i. e., the forma- tion of structural radiation defects. Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of radiation de- fects is part of the generalproblern of crystal lattice defects and the influence of such defects on the processes occurring in semi- conductors. The same is true of photoelectric and similar phe- nomena where the action of the radiation is only the start of a complex chain of nonequilibrium electronprocesses. Nevertheless, particularly from the point of view of the experimental physicist, the radiation effects discussed in the present book have inter- esting features: several types of radiation may produce the same resul t (for example, ionization by photons and by charged particles) or one type of radiation may produce several effects (ionization and radiation -defect formation). The aim of the author was to consider the most typical prob- lems. The subjects discussed differ widely from one another in the extent to which they have been investigated.
Автор: Wynand Lambrechts; Saurabh Sinha Название: SiGe-based Re-engineering of Electronic Warfare Subsystems ISBN: 3319474022 ISBN-13(EAN): 9783319474021 Издательство: Springer Рейтинг: Цена: 20962.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides readers a thorough understanding of the applicability of new-generation silicon-germanium (SiGe) electronic subsystems for electronic warfare and defensive countermeasures in military contexts. It explains in detail the theoretical and technical background, and addresses all aspects of the integration of SiGe as an enabling technology for maritime, land, and airborne / spaceborne electronic warfare, including research, design, development, and implementation. The coverage is supported by mathematical derivations, informative illustrations, practical examples, and case studies. While SiGe technology provides speed, performance, and price advantages in many markets, to date only limited information has been available on its use in electronic warfare systems, especially in developing nations. Addressing that need, this book offers essential engineering guidelines that especially focus on the speed and reliability of current-generation SiGe circuits and highlight emerging innovations that help to ensure the sustainable long-term integration of SiGe into electronic warfare systems.
Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.
Автор: Pilar Gonzalez Ruiz; Kristin De Meyer; Ann Witvrou Название: Poly-SiGe for MEMS-above-CMOS Sensors ISBN: 9400767986 ISBN-13(EAN): 9789400767980 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 ГЇВїВЅ ГЇВїВЅm Cu-backend CMOS.
Автор: Herman Winick; S. Doniach Название: Synchrotron Radiation Research ISBN: 1461580005 ISBN-13(EAN): 9781461580003 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book has grown out of our shared experience in the development of the Stanford Synchrotron Radiation Laboratory (SSRL), based on the electron-positron storage ring SPEAR at the Stanford Linear Accelerator Center (SLAC) starting in Summer, 1973.
Автор: George Messenger Название: The Effects of Radiation on Electronic Systems ISBN: 9401753571 ISBN-13(EAN): 9789401753579 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
Автор: Pilar Gonzalez Ruiz; Kristin De Meyer; Ann Witvrou Название: Poly-SiGe for MEMS-above-CMOS Sensors ISBN: 9401781400 ISBN-13(EAN): 9789401781404 Издательство: Springer Рейтинг: Цена: 13059.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 ГЇВїВЅ ГЇВїВЅm Cu-backend CMOS.
Автор: R.Z. Bachrach Название: Synchrotron Radiation Research ISBN: 1461364426 ISBN-13(EAN): 9781461364429 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Although all five members of the panel went on to have distinguished careers using synchrotron radiation, at the time some of them were skeptical about the future role of synchrotron radiation sources in high-energy photon spectroscopy.
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