Описание: Presents the basic elements to understand and research into semiconductor physics. This work deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. It covers fundamentals of optical bistability, semiconductor lasers, femtosecond excitation and the optical Stark effect.
Автор: S. Luryi; B.I. Shklovskii; A.L. Efros Название: Electronic Properties of Doped Semiconductors ISBN: 3662024055 ISBN-13(EAN): 9783662024058 Издательство: Springer Рейтинг: Цена: 12577.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: First-generation semiconductors could not be properly termed "doped- they were simply very impure. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices.
Автор: Robert K. Willardson Название: Processing and Properties of Compound Semiconductors,73 ISBN: 0127521828 ISBN-13(EAN): 9780127521824 Издательство: Elsevier Science Рейтинг: Цена: 31686.00 р. Наличие на складе: Поставка под заказ.
Автор: Heinz Kalt Название: Optical Properties of III–V Semiconductors ISBN: 3540602291 ISBN-13(EAN): 9783540602293 Издательство: Springer Рейтинг: Цена: 13275.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A monograph that is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley band structures for the physical mechanisms essential for opto-electronic devices.
Автор: J. Chikawa; K. Sumino; K. Wada Название: Defects and Properties of Semiconductors ISBN: 9401086168 ISBN-13(EAN): 9789401086165 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication.
Автор: C.Y. Fong; Inder P. Batra; S. Ciraci Название: Properties of Impurity States in Superlattice Semiconductors ISBN: 1468455559 ISBN-13(EAN): 9781468455557 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im- purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.
Автор: R.T. Phillips Название: Coherent Optical Interactions in Semiconductors ISBN: 0306447371 ISBN-13(EAN): 9780306447372 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of a NATO ARW held in Cambridge, United Kingdom, August 11-14, 1993
Автор: R.T. Phillips Название: Coherent Optical Interactions in Semiconductors ISBN: 1475797508 ISBN-13(EAN): 9781475797503 Издательство: Springer Рейтинг: Цена: 20962.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of a NATO ARW held in Cambridge, United Kingdom, August 11-14, 1993
Автор: Baldassare Di Bartolo Название: Optical Properties of Ions in Solids ISBN: 146842789X ISBN-13(EAN): 9781468427899 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: These proceedings report the lectures and seminars presented at the NATO Advanced Study Institute on "Optical Properties of Ions in Solids," held at Erice, Italy, June 6-21, 1974.
Автор: Baldassare di Bartolo Название: Optical Properties of Excited States in Solids ISBN: 1461363276 ISBN-13(EAN): 9781461363279 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of an International School of Atomic and Molecular Spectroscopy Tenth Course and NATO ASI held in Erice, Italy, June 16-30, 1991
Автор: Marvin L. Cohen; James R. Chelikowsky Название: Electronic Structure and Optical Properties of Semiconductors ISBN: 3540513914 ISBN-13(EAN): 9783540513919 Издательство: Springer Рейтинг: Цена: 9141.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: We began planning and writing this book in thc late 1970$ at thc ugge s stion of Manuel Cardona and Helmut Latsch. We also received considerable eo- couragement and stimulation from colleagues. Same said there was a need for instructional material in tbis area while others emphasized thc utility of a research text. We tried to strike a compromise. Thc figures, tables, and rcferences are included to enable researchcrs to obt81o quickly essential information in this area of semiconductor research. For instructoTS and stu- dents, we attempt to cover same basic ideas abaut electronic structure and semiconductor physics with applications to real, rather than model, solids. Ve \Vish to thank our colleagues and collaborators whose research rc- sults and ideas are presented here. Special thanks are duc to Jim Phillips who illfluellced lIS hoth during ollr formative )'ears and afterwards. We are grateful to Sari Yamagishi for her patience and skill with the typing and production of the manuscript. Finally, we acknowledge the great patience of Helmut Lotsch and Manucl Cardona. llerkeley, CA M.L. Gehen - inncapolis, MN, J.R, Chelikew"ky March 1988 VII Contents 1. Introduction 1 2. Theoretical Concepts and Methods .................... . 4 2.1 Thc One-Electron Model and Band Structure 7 2.2 Properties cf En(k) ......................... . 11 3. Pseudopotentials 16 3.1 The Empirical Pseudopotential Method .......... 20 3.2 Self-Consistent and Ab Initio Pseudopotentials ...... ..... 25 4. Response Functiolls and Density of States . ..
Автор: Kazuaki Sakoda Название: Optical Properties of Photonic Crystals ISBN: 3642424082 ISBN-13(EAN): 9783642424083 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The first comprehensive textbook on the optical properties of photonic crystals. The second edition features a new chapter on superfluorescence and updated text and references throughout.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
