Optical Properties of III–V Semiconductors, Heinz Kalt
Автор: S. Luryi; B.I. Shklovskii; A.L. Efros Название: Electronic Properties of Doped Semiconductors ISBN: 3662024055 ISBN-13(EAN): 9783662024058 Издательство: Springer Рейтинг: Цена: 12577.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: First-generation semiconductors could not be properly termed "doped- they were simply very impure. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices.
Автор: J. Chikawa; K. Sumino; K. Wada Название: Defects and Properties of Semiconductors ISBN: 9401086168 ISBN-13(EAN): 9789401086165 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication.
Описание: Presents the basic elements to understand and research into semiconductor physics. This work deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. It covers fundamentals of optical bistability, semiconductor lasers, femtosecond excitation and the optical Stark effect.
Автор: G. Martinez Название: Optical Properties of Semiconductors ISBN: 0792320581 ISBN-13(EAN): 9780792320586 Издательство: Springer Рейтинг: Цена: 38433.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Presents a review of the different aspects and concepts related to the optical properties of semiconductors. This title bridges the dielectric constant concept and the more the experimental investigations. It reviews the optical response function to time-resolved, high energy, and Raman spectroscopies.
Автор: Junhao Chu; Arden Sher Название: Physics and Properties of Narrow Gap Semiconductors ISBN: 1441925686 ISBN-13(EAN): 9781441925688 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials.
Описание: This thesis breaks new ground in the physics of photonic circuits for quantum optical applications, offering the first demonstration of a spin-photon interface using an all-waveguide geometry, and a number of other highly novel contributions to the field.
Описание: This thesis breaks new ground in the physics of photonic circuits for quantum optical applications, offering the first demonstration of a spin-photon interface using an all-waveguide geometry, and a number of other highly novel contributions to the field.
Описание: This volume discusses the photoelectric behavior of three semiconducting thin film materials hydrogenated amorphous silicon (a Si:H), nano porous titanium dioxide, and the fullerene C60.
Автор: G. Abstreiter; Atilla Aydinli; J.P. Leburton Название: Optical Spectroscopy of Low Dimensional Semiconductors ISBN: 0792347285 ISBN-13(EAN): 9780792347286 Издательство: Springer Рейтинг: Цена: 39970.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Covers basic physical aspects, novel technology and material fabrication tools, characterization methods and devices, with special emphasis on quantum wire and quantum dot lasers. This title discusses about III-V semiconductors, but Group IV and II-VI semiconductor microstructures are also covered.
Автор: R.T. Phillips Название: Coherent Optical Interactions in Semiconductors ISBN: 1475797508 ISBN-13(EAN): 9781475797503 Издательство: Springer Рейтинг: Цена: 20962.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of a NATO ARW held in Cambridge, United Kingdom, August 11-14, 1993
Автор: C.Y. Fong; Inder P. Batra; S. Ciraci Название: Properties of Impurity States in Superlattice Semiconductors ISBN: 1468455559 ISBN-13(EAN): 9781468455557 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im- purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.
Автор: R.T. Phillips Название: Coherent Optical Interactions in Semiconductors ISBN: 0306447371 ISBN-13(EAN): 9780306447372 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of a NATO ARW held in Cambridge, United Kingdom, August 11-14, 1993
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
