Model and Design of Bipolar and MOS Current-Mode Logic, Massimo Alioto; Gaetano Palumbo
Автор: Christopher Michael; Mohammed Ismail Название: Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits ISBN: 079239299X ISBN-13(EAN): 9780792392996 Издательство: Springer Рейтинг: Цена: 20956.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Describes a statistical circuit simulation and optimization environment for VLSI circuit designers. This text also describes a CAD tool which accurately models and simulates the effect of device and circuit characteristics in both intra- and inter-die process variabiliy on analog/digital circuits.
Описание: The purpose of this book is to present analysis and design principles, procedures and techniques of analog integrated circuits which are to be implemented in MOS (metal oxide semiconductor) technology.
Автор: P. Antognetti; D.A. Antoniadis; Robert W. Dutton; Название: Process and Device Simulation for MOS-VLSI Circuits ISBN: 9400968442 ISBN-13(EAN): 9789400968448 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July 12-23, 1982
Автор: Vasant B. Rao; David V. Overhauser; Timothy N. Tri Название: Switch-Level Timing Simulation of MOS VLSI Circuits ISBN: 0898383021 ISBN-13(EAN): 9780898383027 Издательство: Springer Рейтинг: Цена: 23757.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Only two decades ago most electronic circuits were designed with a slide-rule, and the designs were verified using breadboard techniques. Today a wide range of tools exist for analYSiS, deSign, and verification, and expert systems and synthesis tools are rapidly emerging.
Автор: Vasant B. Rao; David V. Overhauser; Timothy N. Tri Название: Switch-Level Timing Simulation of MOS VLSI Circuits ISBN: 1461289637 ISBN-13(EAN): 9781461289630 Издательство: Springer Рейтинг: Цена: 23058.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Only two decades ago most electronic circuits were designed with a slide-rule, and the designs were verified using breadboard techniques. Today a wide range of tools exist for analYSiS, deSign, and verification, and expert systems and synthesis tools are rapidly emerging.
Автор: Lars Rebohle; Wolfgang Skorupa Название: Rare-Earth Implanted MOS Devices for Silicon Photonics ISBN: 3642265588 ISBN-13(EAN): 9783642265587 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications.
Автор: Martin Haartman; Mikael ?stling Название: Low-Frequency Noise in Advanced MOS Devices ISBN: 9048174724 ISBN-13(EAN): 9789048174720 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits.
Автор: Jeroen A. Croon; Willy M Sansen; Herman E. Maes Название: Matching Properties of Deep Sub-Micron MOS Transistors ISBN: 1441937188 ISBN-13(EAN): 9781441937186 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters.
Автор: Remco J. Wiegerink Название: Analysis and Synthesis of MOS Translinear Circuits ISBN: 0792393902 ISBN-13(EAN): 9780792393900 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Derives the MOS Translinear principle and investigates the effects of transistor nonidealities. This book focusses on circuit synthesis and presents design strategies which are illustrated by the design of various circuits: an output stage for CMOS opamps, a four-quadrant multiplier and a variable-gamma circuit for color television.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru