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Electronic Defect States in Alkali Halides, Volkmar Dierolf


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Цена: 26120.00р.
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Автор: Volkmar Dierolf
Название:  Electronic Defect States in Alkali Halides
ISBN: 9783642055942
Издательство: Springer
Классификация:

ISBN-10: 364205594X
Обложка/Формат: Paperback
Страницы: 196
Вес: 0.30 кг.
Дата издания: 01.12.2010
Серия: Springer Tracts in Modern Physics
Язык: English
Размер: 234 x 156 x 11
Основная тема: Physics
Подзаголовок: Effects of Interaction with Molecular Ions
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This up-to-date text deals with the mutual interaction and energy transfer between electronic defect states of F centres and defect ions and neighbouring molecular defects in alkali halides. It includes more than 100 illustrations and figures, plus many previously unpublished results.


Alkali Halides

Автор: D.B. Sirdeshmukh; L. Sirdeshmukh; K.G. Subhadra
Название: Alkali Halides
ISBN: 3642075789 ISBN-13(EAN): 9783642075780
Издательство: Springer
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Цена: 19589.00 р.
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Описание: Providing in a single volume all essential information on the physical properties of alkali halides, this book will be a valuable reference for solid-state physicists and materials scientists.

Defect Evolution in Cosmology and Condensed Matter

Автор: Martins
Название: Defect Evolution in Cosmology and Condensed Matter
ISBN: 3319445510 ISBN-13(EAN): 9783319445519
Издательство: Springer
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Цена: 6529.00 р.
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Описание: This book sheds new light on topological defects in widely differing systems, using the Velocity-Dependent One-Scale Model to better understand their evolution. Topological defects – cosmic strings, monopoles, domain walls or others - necessarily form at cosmological (and condensed matter) phase transitions. If they are stable and long-lived they will be fossil relics of higher-energy physics. Understanding their behaviour and consequences is a key part of any serious attempt to understand the universe, and this requires modelling their evolution. The velocity-dependent one-scale model is the only fully quantitative model of defect network evolution, and the canonical model in the field. This book provides a review of the model, explaining its physical content and describing its broad range of applicability.

Optic Diagnostics on Pulverized Coal Particles Combustion Dynamics and Alkali Metal Release Behavior

Автор: Ye Yuan
Название: Optic Diagnostics on Pulverized Coal Particles Combustion Dynamics and Alkali Metal Release Behavior
ISBN: 9811048126 ISBN-13(EAN): 9789811048128
Издательство: Springer
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Цена: 20962.00 р.
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Описание: This book focuses on pulverized coal particle devolatilization, ignition, alkali metal release behavior, and burnout temperature using several novel optic diagnostic methods on a Hencken multi-flat flame burner. Firstly, it presents a novel multi-filter technique to detect the CH* signal during coal ignition, which can be used to characterize the volatile release and reaction process. It then offers observations on the prevalent transition from heterogeneous ignition to hetero-homogeneous ignition due to ambient temperature based on visible light signal diagnostics. By utilizing the gap between the excitation energies of the gas and particle phases, a new low-intensity laser-induced breakdown spectroscopy (PS-LIBS) is developed to identify the presence of sodium in the particle or gas phase along the combustion process. For the first time, the in-situ verification of the gas phase Na release accompanying coal devolatilization is fulfilled when the ambient temperature is high enough. In fact, particle temperature plays a vital role in the coal burnout process and ash particle formation. The last part of the book uses RGB color pyrometry and the CBK model to study the char particle temperature on a Hencken burner. It offers readers valuable information on the technique of coal ignition and combustion diagnostics as well as coal combustion characteristics.

Charged Semiconductor Defects

Автор: Edmund G. Seebauer; Meredith C. Kratzer
Название: Charged Semiconductor Defects
ISBN: 1848820585 ISBN-13(EAN): 9781848820586
Издательство: Springer
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Цена: 26122.00 р.
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Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.

Development of Infrared Techniques for Practical Defect Identification in Bonded Joints

Автор: Rachael C. Waugh
Название: Development of Infrared Techniques for Practical Defect Identification in Bonded Joints
ISBN: 3319373773 ISBN-13(EAN): 9783319373775
Издательство: Springer
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Цена: 14365.00 р.
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Описание: Introduction.- Adhesive bonding.- Non-destructive evaluation.- The physics and implementation of thermography.- Preliminary results.- Numerical modelling.- Kissing defects.- Practical application of PT/PPT.- Industrial applications.- Conclusions and future work.

Growth and Defect Structures

Автор: H. C. Freyhardt
Название: Growth and Defect Structures
ISBN: 3642698689 ISBN-13(EAN): 9783642698682
Издательство: Springer
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Цена: 18167.00 р.
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Описание: With contributions by numerous experts

Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films

Автор: Dongyang Wan
Название: Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films
ISBN: 3319659111 ISBN-13(EAN): 9783319659114
Издательство: Springer
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Цена: 15372.00 р.
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Описание: This impressive thesis offers a comprehensive scientific study of the alkaline earth niobates and describes their nonlinear optical properties for the first time.

Interatomic Potentials and Simulation of Lattice Defects

Автор: P. Gehlen
Название: Interatomic Potentials and Simulation of Lattice Defects
ISBN: 1468419943 ISBN-13(EAN): 9781468419948
Издательство: Springer
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Цена: 16979.00 р.
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Описание: The remaining days were devoted to research papers on computer simulation of the four types of defects: point defects, line defects, surface defects, and volume defects.

Point Defects in Semiconductors I

Автор: J. Friedel; M. Lannoo
Название: Point Defects in Semiconductors I
ISBN: 3642815766 ISBN-13(EAN): 9783642815768
Издательство: Springer
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Цена: 14365.00 р.
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Описание: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of `band theory` can be safely used to study its interesting electronic properties.


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