Автор: Martins Название: Defect Evolution in Cosmology and Condensed Matter ISBN: 3319445510 ISBN-13(EAN): 9783319445519 Издательство: Springer Рейтинг: Цена: 6529.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book sheds new light on topological defects in widely differing systems, using the Velocity-Dependent One-Scale Model to better understand their evolution. Topological defects – cosmic strings, monopoles, domain walls or others - necessarily form at cosmological (and condensed matter) phase transitions. If they are stable and long-lived they will be fossil relics of higher-energy physics. Understanding their behaviour and consequences is a key part of any serious attempt to understand the universe, and this requires modelling their evolution. The velocity-dependent one-scale model is the only fully quantitative model of defect network evolution, and the canonical model in the field. This book provides a review of the model, explaining its physical content and describing its broad range of applicability.
Описание: Introduction.- Adhesive bonding.- Non-destructive evaluation.- The physics and implementation of thermography.- Preliminary results.- Numerical modelling.- Kissing defects.- Practical application of PT/PPT.- Industrial applications.- Conclusions and future work.
Автор: Volkmar Dierolf Название: Electronic Defect States in Alkali Halides ISBN: 364205594X ISBN-13(EAN): 9783642055942 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This up-to-date text deals with the mutual interaction and energy transfer between electronic defect states of F centres and defect ions and neighbouring molecular defects in alkali halides. It includes more than 100 illustrations and figures, plus many previously unpublished results.
Автор: B.K. Tanner Название: Characterization of Crystal Growth Defects by X-Ray Methods ISBN: 147571128X ISBN-13(EAN): 9781475711288 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods` held in the University of Durham, England from 29th August to 10th September 1979.
Автор: N. Hannay Название: Defects in Solids ISBN: 1468408313 ISBN-13(EAN): 9781468408317 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Yet, even though the role of chemistry in the solid-state sciences has been a vital one and the solid-state sciences have, in turn, made enormous contributions to chemical thought, solid-state chemistry has not been recognized by the general body of chemists as a major subfield of chemistry.
Автор: Giorgio Benedek Название: Point and Extended Defects in Semiconductors ISBN: 146845711X ISBN-13(EAN): 9781468457117 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The systematic study of defects in semiconductors began in the early fifties. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Автор: Johann-Martin Spaeth; J?rgen R. Niklas; Ralph H. B Название: Structural Analysis of Point Defects in Solids ISBN: 3642844073 ISBN-13(EAN): 9783642844072 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Strutural Analysis of Point Defects in Solids introduces theprinciples and techniques of modern electron paramagneticresonance (EPR) spectroscopy essentialfor applications tothe determination of microscopic defectstructures.
Автор: Gunnar Borstel; Andris Krumins; Donats Millers Название: Defects and Surface-Induced Effects in Advanced Perovskites ISBN: 0792362160 ISBN-13(EAN): 9780792362166 Издательство: Springer Рейтинг: Цена: 38992.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Complex oxide materials, especially the ABO3-type perovskite materials, have been attracting growing scientific interest due to their unique electro-optical properties. This title reports the developments and results and brings progress in high-tech technologies using perovskite materials.
Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.
Автор: B. Henderson Название: Defects and Their Structure in Nonmetallic Solids ISBN: 1468428047 ISBN-13(EAN): 9781468428049 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Thus major emphases in the pro- gramme concerned the use of spectroscopy and microscopy in revealing the structure of point defects and their aggregates, line defects as well as planar and volume defects.
Автор: Edmund G. Seebauer; Meredith C. Kratzer Название: Charged Semiconductor Defects ISBN: 1848820585 ISBN-13(EAN): 9781848820586 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
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