Materials Fundamentals of Gate Dielectrics, Alexander A. Demkov; Alexandra Navrotsky

Автор: Loucas G. Christophorou; James K. Olthoff
Название: Gaseous Dielectrics IX
ISBN: 146135143X ISBN-13(EAN): 9781461351436
Издательство: Springer
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Описание: Gaseous Dielectrics IX covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics.

Автор: Breeze
Название: Temperature and Frequency Dependence of Complex Permittivity in Metal Oxide Dielectrics: Theory, Modelling and Measurement
ISBN: 3319445456 ISBN-13(EAN): 9783319445458
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Описание: This thesis investigates the dielectric properties of metal-oxide ceramics at microwave frequencies. It also demonstrates for the first time that a theory of harmonic phonon coupling can effectively predict the complex permittivity of metal oxides as a function of temperature and frequency. Dielectric ceramics are an important class of materials for radio-frequency, microwave and emergent terahertz technologies. Their key property is complex permittivity, the real part of which permits the miniaturisation of devices and the imaginary part of which is responsible for the absorption of electromagnetic energy. Absorption limits the practical performance of many microwave devices such as filters, oscillators, passive circuits and antennas. Complex permittivity as a function of temperature for low-loss dielectrics is determined by measuring the resonant frequency of dielectric resonators and using the radial mode matching technique to extract the dielectric properties.There have been only a handful of publications on the theory of dielectric loss, and their predictions have often been unfortunately unsatisfactory when compared to measurements of real crystals, sometimes differing by whole orders of magnitude. The main reason for this is the lack of accurate data for a harmonic coupling coefficient and phonon eigenfrequencies at arbitrary q vectors in the Brillouin zone. Here, a quantum field theory of losses in dielectrics is applied, using results from density functional perturbation theory, to predict from first principles the complex permittivity of metal oxides as functions of frequency and temperature.

Автор: Barry R. Jennings
Название: Electro-Optics and Dielectrics of Macromolecules and Colloids
ISBN: 1468434993 ISBN-13(EAN): 9781468434996
Издательство: Springer
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Цена: 13060.00 р.
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Описание: Some seven years before Kerr`s death, Larmor proposed that electric birefringence had its origin in the orientation of anisotropic molecules or elements within the apparently isotropic medium.

Автор: Vsevolod F. Kiselev; Oleg V. Krylov
Название: Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics
ISBN: 3642830226 ISBN-13(EAN): 9783642830228
Издательство: Springer
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Цена: 10448.00 р.
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Описание: The research done in this field will help to widen the scope of semi- conductor applications by finding novel ways of employing surface effects in the construct ion of mi croe 1 ectroni c devi ces, semi conductor gas ana lysers, solar cells, etc.

Автор: Loucas G. Christophorou; James K. Olthoff
Название: Gaseous Dielectrics VIII
ISBN: 1461372216 ISBN-13(EAN): 9781461372219
Издательство: Springer
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Цена: 26122.00 р.
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Описание: Gaseous Dielectrics VIII covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics.

Автор: Loucas C. Christophorou; James K. Olthoff; Panayot
Название: Gaseous Dielectrics X
ISBN: 1461347459 ISBN-13(EAN): 9781461347453
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Цена: 19564.00 р.
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Автор: Mar?a ?ngela Pampill?n Arce
Название: Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
ISBN: 3319666061 ISBN-13(EAN): 9783319666068
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Цена: 15372.00 р.
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Описание: This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets.

Автор: Eric Garfunkel; Evgeni Gusev; Alexander Vul`
Название: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
ISBN: 0792350073 ISBN-13(EAN): 9780792350071
Издательство: Springer
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Цена: 41787.00 р.
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Описание: Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997

Автор: Eric Garfunkel; Evgeni Gusev; Alexander Vul`
Название: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
ISBN: 0792350081 ISBN-13(EAN): 9780792350088
Издательство: Springer
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Цена: 29209.00 р.
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Описание: Features an extrapolation of ULSI scaling trends and indicates that minimum feature sizes below 0.1 mu and gate thicknesses of. This book is intended for expert scientists and engineers who wish to keep up with research, and students who wish to learn more about the basic research issues relevant to device technology.

Автор: Loucas G. Christophorou; I. Sauers
Название: Gaseous Dielectrics VI
ISBN: 1461366488 ISBN-13(EAN): 9781461366485
Издательство: Springer
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Цена: 6986.00 р.
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Описание: The Sixth International Symposium on Gaseous Dielectrics was held in Knoxville, Tennessee, U.S.A., on September 23-27, 1990. It is hoped that Gaseous Dielectrics VI will aid future research and development in and encourage wider industrial use of gaseous dielectrics.

Автор: Loucas G. Christophorou; D.R. James
Название: Gaseous Dielectrics VII
ISBN: 1489912975 ISBN-13(EAN): 9781489912978
Издательство: Springer
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Описание: The Seventh International Symposium on Gaseous Dielectrics was held in Knoxville, Tennessee, U. It is hoped that Gaseous DielecIries VII will aid future research and development in, and encourage wider industrial use of, gaseous dielectrics. The Organizing Committee of the Seventh International Symposium on Gaseous Dielectrics consisted of G.

Автор: Samares Kar
Название: High Permittivity Gate Dielectric Materials
ISBN: 3662501384 ISBN-13(EAN): 9783662501382
Издательство: Springer
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Описание: This book covers all aspects of the physics and the technology of high permittivity gate dielectric materials. Each chapter covers basic topics, reviews the literature, and details the research contributions of the author`s group to the subject.