Defects and Fracture, George C. Sih; H. Zorski

Автор: G. Sih
Название: Defects, Fracture and Fatigue
ISBN: 940096823X ISBN-13(EAN): 9789400968233
Издательство: Springer
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Автор: Edmund G. Seebauer; Meredith C. Kratzer
Название: Charged Semiconductor Defects
ISBN: 1849968209 ISBN-13(EAN): 9781849968201
Издательство: Springer
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Описание: "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.

Автор: Barabash Rozaliya, Ice Gene
Название: Strain and Dislocation Gradients from Diffraction: Spatially-Resolved Local Structure and Defects
ISBN: 1908979623 ISBN-13(EAN): 9781908979629
Издательство: World Scientific Publishing
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Описание: This book highlights emerging diffraction studies of strain and dislocation gradients with mesoscale resolution, which is currently a focus of research at laboratories around the world. While ensemble-average diffraction techniques are mature, grain and subgrain level measurements needed to understand real materials are just emerging. In order to understand the diffraction signature of different defects, it is necessary to understand the distortions created by the defects and the corresponding changes in the reciprocal space of the non-ideal crystals.Starting with a review of defect classifications based on their displacement fields, this book then provides connections between different dislocation arrangements, including geometrically necessary and statistically stored dislocations, and other common defects and the corresponding changes in the reciprocal space and diffraction patterns. Subsequent chapters provide an overview of microdiffraction techniques developed during the last decade to extract information about strain and dislocation gradients. X-ray microdiffraction is a particularly exciting application compared with alternative probes of local crystalline structure, orientation and defect density, because it is inherently non-destructive and penetrating.

Автор: Ren Wang
Название: IUTAM Symposium on Rheology of Bodies with Defects
ISBN: 9401738297 ISBN-13(EAN): 9789401738293
Издательство: Springer
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Цена: 15672.00 р.
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Описание: Proceedings of the IUTAM Symposium held in Beijing, China, 2-5 September 1997

Автор: Richard Catlow
Название: Defects and Disorder in Crystalline and Amorphous Solids
ISBN: 0792326105 ISBN-13(EAN): 9780792326106
Издательство: Springer
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Цена: 49613.00 р.
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Описание: Provides a unified approach to disorder in solids. This study includes coverage of the theoretical and structural concepts; basic properties; transport, thermodynamic and spectroscopic properties; theoretical and computational techniques; fast-ion conductors; and amorphous semiconductors.

Автор: Toshio Mura
Название: Micromechanics of defects in solids
ISBN: 9401185484 ISBN-13(EAN): 9789401185486
Издательство: Springer
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Описание: This book sterns from a course on Micromechanics that I started about fifteen years ago at Northwestern University.