Next Generation Multilayer Graded Bandgap Solar Cells, Ojo
Автор: John R. Wagner, Jr. Название: Multilayer Flexible Packaging ISBN: 0323371000 ISBN-13(EAN): 9780323371001 Издательство: Elsevier Science Рейтинг: Цена: 37055.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Multilayer Flexible Packaging, Second Edition, provides a thorough introduction to the manufacturing and applications of flexible plastic films, covering materials, hardware and processes, and multilayer film designs and applications. The book gives engineers and technicians a better understanding of the capability and limitations of multilayer flexible films and how to use them to make effective packaging. . It includes contributions from world renowned experts and is fully updated to reflect the rapid advances made in the field since 2009, also including an entirely new chapter on the use of bio-based polymers in flexible packaging. The result is a practical, but detailed reference for polymeric flexible packaging professionals, including product developers, process engineers, and technical service representatives. . The materials coverage includes detailed sections on polyethylene, polypropylene, and additives. The dies used to produce multilayer films are explored in the hardware section, and the process engineering of film manufacture is explained, with a particular focus on meeting specifications and targets. In addition, a new chapter has been added on regulations for food packaging – including both FDA and EU regulations.
Автор: Yafei Zhang; Da Chen Название: Multilayer Integrated Film Bulk Acoustic Resonators ISBN: 3642427553 ISBN-13(EAN): 9783642427558 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book surveys the theory, design, fabrication and application multilayer integrated film bulk acoustic resonators. Covers use in integrated circuits, optical devices, acoustic resonators, micro-nano manufacturing, multilayer integration, and more.
Автор: Hao Название: Nitride Wide Bandgap Semiconductor ISBN: 1498745121 ISBN-13(EAN): 9781498745123 Издательство: Taylor&Francis Рейтинг: Цена: 26796.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
Автор: Suganuma, Katsuaki Название: Wide Bandgap Power Semiconductor Packaging ISBN: 0081020945 ISBN-13(EAN): 9780081020944 Издательство: Elsevier Science Рейтинг: Цена: 27791.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic.
Автор: Baliga, B. Jayant Название: Wide bandgap Semiconductor Power Devices ISBN: 0081023065 ISBN-13(EAN): 9780081023068 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Wide bandgap semiconductor power devices have been under investigation for more than 35 years. During the last 10 years, gallium nitride and silicon carbide power devices have become commercially available. There has been a flurry of activity around the world to exploit these devices for commercial applications.
Wide Bandgap Semiconductor Power Devices provides readers with a single resource to understand why these devices are superior to the existing silicon power devices. It lays the groundwork for understanding of the array of applications for these devices and the anticipated benefits in energy savings.
Founder of the Power Semiconductor Research Center at North Carolina State University and creator of the IGBT device, Dr. B. Jayant Baliga is one of the highest regarded experts in the field. In Wide bandgap Semiconductor Power Devices Dr. Baliga leads a team of experts to comprehensively review the materials, device physics, design considerations and most relevant applications for these devices.
Covers power electronic devices comprehensively including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
Addresses the key challenges towards the realization of wide bandgap power electronic devices including materials defects and their role in performance and reliability
Provides benefits of wide bandgap semiconductors including opportunities for cost reduction and social impact
Автор: Maciej Krawczak Название: Multilayer Neural Networks ISBN: 3319033905 ISBN-13(EAN): 9783319033907 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book shows that a multilayer neural network can be considered as a multistage system, and that the learning of this class of neural networks can be treated as a special sort of the optimal control problem.
Автор: R?diger G. Ballas Название: Piezoelectric Multilayer Beam Bending Actuators ISBN: 364206910X ISBN-13(EAN): 9783642069109 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book describes the application of piezoelectric materials, particularly piezoceramics, in the wide field of actuators and sensors. It gives a step-by-step introduction to the structure and mechanics of piezoelectric beam bending actuators in multilayer technology, which are of increasing importance for industrial applications.
Автор: Takahashi Название: Wide Bandgap Semiconductors ISBN: 3540472347 ISBN-13(EAN): 9783540472346 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related
optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN
FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap
semiconductors and related optoelectronics devices.
After a review of the basic physics of WBGS and the rele
ance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and
gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the
properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the
effect of defects on device performance are highlighted and solutions proposed based on recent studies.
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