Wide Bandgap Power Semiconductor Packaging, Suganuma, Katsuaki
Автор: Hao Название: Nitride Wide Bandgap Semiconductor ISBN: 1498745121 ISBN-13(EAN): 9781498745123 Издательство: Taylor&Francis Рейтинг: Цена: 26796.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
Автор: Takahashi Название: Wide Bandgap Semiconductors ISBN: 3540472347 ISBN-13(EAN): 9783540472346 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related
optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN
FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap
semiconductors and related optoelectronics devices.
After a review of the basic physics of WBGS and the rele
ance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and
gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the
properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the
effect of defects on device performance are highlighted and solutions proposed based on recent studies.
Автор: Ojo Название: Next Generation Multilayer Graded Bandgap Solar Cells ISBN: 3319966669 ISBN-13(EAN): 9783319966663 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book will guide Photovoltaics researchers in a new way of thinking about harvesting light energy from all wavelengths of the solar spectrum. It closes the gap between general solar cells books and photovoltaics journal articles, by focusing on the latest developments in our understanding of solid-state device physics. The material presented is experimental and based on II-VI thin-film materials, mainly CdTe-based solar cells. The authors describe the use of new device design, based on multilayer graded bandgap configuration, using CdTe-based solar cells. The authors also explain how the photo-generated currents can be enhanced using multi-step charge carrier production. The possibility of fabricating these devices using low-cost and scalable electroplating is demonstrated. The value of electroplating for large area electronic devices such as PV solar panels, display devices and nano-technology devices are also demonstrated. By enabling new understanding of the engineering of electroplated semiconductor materials and providing an overview of the semiconductor physics and technology, this practical book is ideal to guide researchers, engineers, and manufacturers on future solar cell device designs and fabrications.
Discusses in detail the processes of growths, treatments, solar cell device fabrication and solid state physics, improving readers' understanding of fundamental solid state physics;
Enables future improvements in CdTe-based device efficiency;
Explains the significance of defects in deposited semiconductor materials and interfaces that affect the material properties and resulting device performance.
Автор: Chen, Andrea Lo, Randy Hsiao-yu Название: Semiconductor packaging ISBN: 1439862052 ISBN-13(EAN): 9781439862056 Издательство: Taylor&Francis Рейтинг: Цена: 31390.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package.
The book focuses on an important step in semiconductor manufacturing--package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how the properties of packaging materials interact with each another and explore how to maximize the performance of these materials in regard to package integrity and reliability.
By tying together the disparate elements essential to a semiconductor package, this easy-to-read book shows how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world.
Автор: B. Jayant Baliga Название: Fundamentals of Power Semiconductor Devices ISBN: 1489977651 ISBN-13(EAN): 9781489977656 Издательство: Springer Рейтинг: Цена: 22201.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
Автор: Baliga, B. Jayant Название: Wide bandgap Semiconductor Power Devices ISBN: 0081023065 ISBN-13(EAN): 9780081023068 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Wide bandgap semiconductor power devices have been under investigation for more than 35 years. During the last 10 years, gallium nitride and silicon carbide power devices have become commercially available. There has been a flurry of activity around the world to exploit these devices for commercial applications.
Wide Bandgap Semiconductor Power Devices provides readers with a single resource to understand why these devices are superior to the existing silicon power devices. It lays the groundwork for understanding of the array of applications for these devices and the anticipated benefits in energy savings.
Founder of the Power Semiconductor Research Center at North Carolina State University and creator of the IGBT device, Dr. B. Jayant Baliga is one of the highest regarded experts in the field. In Wide bandgap Semiconductor Power Devices Dr. Baliga leads a team of experts to comprehensively review the materials, device physics, design considerations and most relevant applications for these devices.
Covers power electronic devices comprehensively including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
Addresses the key challenges towards the realization of wide bandgap power electronic devices including materials defects and their role in performance and reliability
Provides benefits of wide bandgap semiconductors including opportunities for cost reduction and social impact
Автор: Chen Название: Semiconductor Packaging ISBN: 113807540X ISBN-13(EAN): 9781138075405 Издательство: Taylor&Francis Рейтинг: Цена: 11789.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package.
The book focuses on an important step in semiconductor manufacturing--package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how the properties of packaging materials interact with each another and explore how to maximize the performance of these materials in regard to package integrity and reliability.
By tying together the disparate elements essential to a semiconductor package, this easy-to-read book shows how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world.
Автор: Baliga, B,jayant Название: Fundamentals of power semiconductor devices ISBN: 0387473130 ISBN-13(EAN): 9780387473130 Издательство: Springer Рейтинг: Цена: 30039.00 р. Наличие на складе: Поставка под заказ.
Описание: Offers an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. This book shows analytical models for explaining the operation of various power semiconductor devices. It is suitable for practicing engineers in the power semiconductor device community.
Автор: E. Ramshaw Название: Power Electronics Semiconductor Switches ISBN: 0412288702 ISBN-13(EAN): 9780412288708 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The second edition of Professor Ramshaw`s "Power Electronics". The text has been re-written and expanded to take into account both advances in the field and changes in electrical and electronic engineering syllabuses, and contains worked examples and problem sets throughout.
Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman Название: Semiconductor Power Devices ISBN: 331970916X ISBN-13(EAN): 9783319709161 Издательство: Springer Рейтинг: Цена: 32142.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
Автор: Richard G. Hoft Название: Semiconductor Power Electronics ISBN: 9401170177 ISBN-13(EAN): 9789401170178 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Semiconductors have been used widely in signal-level or brain applications. Since their invention in 1948, transistors have revolutionized the electronics industry in computers, information processing, and communications. Now, however, semiconductors are being used more and more where consid- erable brawn is required. Devices such as high-power bipolar junction tran- sistors and power field-effect transistors, as well as SCRs, TRlACs, GTOs, and other semiconductor switching devices that use a p-n-p-n regenerative effect to achieve bistable action, are expanding the power-handling horizons of semicon- ductors and finding increasing application in a wide range of products including regulated power supplies, lamp dimmers, motor drives, pulse modulators, and heat controls. HVDC and electric-vehicle propulsion are two additional areas of application which may have a very significant long range impact on the tech- nology. The impact of solid-state devices capable of handling appreciable power levels has yet to be fully realized. Since it first became available in late 1957, the SCR or silicon-controlled rec- tifier (also called the reverse blocking triode thyristor) has become the most popular member of the thyristor family. At present, SCRs are available from a large number of manufacturers in this country and abroad. SCR ratings range from less than one ampere to over three thousand amperes with voltage ratings in excess of three thousand volts.
Автор: Liao, Meiyong Название: Ultra-wide Bandgap Semiconductor Materials ISBN: 0128154683 ISBN-13(EAN): 9780128154687 Издательство: Elsevier Science Рейтинг: Цена: 30991.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride.
Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials
Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance
Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
