Автор: Suganuma, Katsuaki Название: Wide Bandgap Power Semiconductor Packaging ISBN: 0081020945 ISBN-13(EAN): 9780081020944 Издательство: Elsevier Science Рейтинг: Цена: 27791.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic.
Автор: Ojo Название: Next Generation Multilayer Graded Bandgap Solar Cells ISBN: 3319966669 ISBN-13(EAN): 9783319966663 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book will guide Photovoltaics researchers in a new way of thinking about harvesting light energy from all wavelengths of the solar spectrum. It closes the gap between general solar cells books and photovoltaics journal articles, by focusing on the latest developments in our understanding of solid-state device physics. The material presented is experimental and based on II-VI thin-film materials, mainly CdTe-based solar cells. The authors describe the use of new device design, based on multilayer graded bandgap configuration, using CdTe-based solar cells. The authors also explain how the photo-generated currents can be enhanced using multi-step charge carrier production. The possibility of fabricating these devices using low-cost and scalable electroplating is demonstrated. The value of electroplating for large area electronic devices such as PV solar panels, display devices and nano-technology devices are also demonstrated. By enabling new understanding of the engineering of electroplated semiconductor materials and providing an overview of the semiconductor physics and technology, this practical book is ideal to guide researchers, engineers, and manufacturers on future solar cell device designs and fabrications.
Discusses in detail the processes of growths, treatments, solar cell device fabrication and solid state physics, improving readers' understanding of fundamental solid state physics;
Enables future improvements in CdTe-based device efficiency;
Explains the significance of defects in deposited semiconductor materials and interfaces that affect the material properties and resulting device performance.
Автор: Hao Название: Nitride Wide Bandgap Semiconductor ISBN: 1498745121 ISBN-13(EAN): 9781498745123 Издательство: Taylor&Francis Рейтинг: Цена: 26796.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
Автор: Baliga, B. Jayant Название: Wide bandgap Semiconductor Power Devices ISBN: 0081023065 ISBN-13(EAN): 9780081023068 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Wide bandgap semiconductor power devices have been under investigation for more than 35 years. During the last 10 years, gallium nitride and silicon carbide power devices have become commercially available. There has been a flurry of activity around the world to exploit these devices for commercial applications.
Wide Bandgap Semiconductor Power Devices provides readers with a single resource to understand why these devices are superior to the existing silicon power devices. It lays the groundwork for understanding of the array of applications for these devices and the anticipated benefits in energy savings.
Founder of the Power Semiconductor Research Center at North Carolina State University and creator of the IGBT device, Dr. B. Jayant Baliga is one of the highest regarded experts in the field. In Wide bandgap Semiconductor Power Devices Dr. Baliga leads a team of experts to comprehensively review the materials, device physics, design considerations and most relevant applications for these devices.
Covers power electronic devices comprehensively including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
Addresses the key challenges towards the realization of wide bandgap power electronic devices including materials defects and their role in performance and reliability
Provides benefits of wide bandgap semiconductors including opportunities for cost reduction and social impact
Автор: Takahashi Название: Wide Bandgap Semiconductors ISBN: 3540472347 ISBN-13(EAN): 9783540472346 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related
optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN
FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap
semiconductors and related optoelectronics devices.
After a review of the basic physics of WBGS and the rele
ance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and
gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the
properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the
effect of defects on device performance are highlighted and solutions proposed based on recent studies.
Автор: J.G. Rarity; Claude Weisbuch Название: Microcavities and Photonic Bandgaps: Physics and Applications ISBN: 9401066264 ISBN-13(EAN): 9789401066266 Издательство: Springer Рейтинг: Цена: 50172.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Study Institute on `Quantum Optics in Wavelength Scale Structures`, Cargese, Corsica, August 26-September 2, 1995
Автор: Cristiano Calligaro; Umberto Gatti; Название: Rad-hard Semiconductor Memories ISBN: 8770220204 ISBN-13(EAN): 9788770220200 Издательство: Taylor&Francis Рейтинг: Цена: 14086.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components.Technical topics discussed in the book include:Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies
Автор: S. Coffa; F. Priolo; Emanuele Rimini; J.M. Poate Название: Crucial Issues in Semiconductor Materials and Processing Technologies ISBN: 0792320034 ISBN-13(EAN): 9780792320036 Издательство: Springer Рейтинг: Цена: 59256.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Discusses crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. This book covers silicon and compound semiconductors and photonic materials.
Автор: S. Coffa; F. Priolo; Emanuele Rimini; J.M. Poate Название: Crucial Issues in Semiconductor Materials and Processing Technologies ISBN: 9401052034 ISBN-13(EAN): 9789401052030 Издательство: Springer Рейтинг: Цена: 27950.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, July 1-13, 1991
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
