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Wide bandgap Semiconductor Power Devices, Baliga, B. Jayant


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Автор: Baliga, B. Jayant   (В. Джайянт Балига)
Название:  Wide bandgap Semiconductor Power Devices
Перевод названия: В. Джайянт Балига: Полупроводниковые силовые устройства с широкой запрещенной зоной
ISBN: 9780081023068
Издательство: Elsevier Science
Классификация:
ISBN-10: 0081023065
Обложка/Формат: Paperback
Страницы: 600
Вес: 0.56 кг.
Дата издания: 01.09.2018
Серия: Woodhead publishing series in electronic and optical materials
Язык: English
Размер: 154 x 229 x 22
Основная тема: Materials Science and Engineering
Подзаголовок: Materials, physics, design, and applications
Ссылка на Издательство: Link
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Поставляется из: Европейский союз
Описание:

Wide bandgap semiconductor power devices have been under investigation for more than 35 years. During the last 10 years, gallium nitride and silicon carbide power devices have become commercially available. There has been a flurry of activity around the world to exploit these devices for commercial applications.

Wide Bandgap Semiconductor Power Devices provides readers with a single resource to understand why these devices are superior to the existing silicon power devices. It lays the groundwork for understanding of the array of applications for these devices and the anticipated benefits in energy savings.

Founder of the Power Semiconductor Research Center at North Carolina State University and creator of the IGBT device, Dr. B. Jayant Baliga is one of the highest regarded experts in the field. In Wide bandgap Semiconductor Power Devices Dr. Baliga leads a team of experts to comprehensively review the materials, device physics, design considerations and most relevant applications for these devices.

  • Covers power electronic devices comprehensively including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
  • Addresses the key challenges towards the realization of wide bandgap power electronic devices including materials defects and their role in performance and reliability
  • Provides benefits of wide bandgap semiconductors including opportunities for cost reduction and social impact



Fundamentals of power semiconductor devices

Автор: Baliga, B,jayant
Название: Fundamentals of power semiconductor devices
ISBN: 0387473130 ISBN-13(EAN): 9780387473130
Издательство: Springer
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Цена: 30039.00 р.
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Описание: Offers an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. This book shows analytical models for explaining the operation of various power semiconductor devices. It is suitable for practicing engineers in the power semiconductor device community.

Semiconductor Power Devices

Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman
Название: Semiconductor Power Devices
ISBN: 331970916X ISBN-13(EAN): 9783319709161
Издательство: Springer
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Цена: 32142.00 р.
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Описание: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.

Semiconductor Power Devices

Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman
Название: Semiconductor Power Devices
ISBN: 3642423485 ISBN-13(EAN): 9783642423482
Издательство: Springer
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Цена: 19589.00 р.
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Описание: Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems.- Semiconductor Properties.- pn - Junctions.- Short introduction to power device technology.- pin-Diodes.- Schottky Diodes.- Bipolar Transistors.- Thyristors.- MOS Transistors.- IGBTs.- Packaging and Reliability of Power Devices.- Destructive Mechanisms in Power Devices.- Power Device Induced Oscillations and Electromagnetic Disturbances.- Power Electronic Systems.- Appendix.- Index.

Wide Bandgap Power Semiconductor Packaging

Автор: Suganuma, Katsuaki
Название: Wide Bandgap Power Semiconductor Packaging
ISBN: 0081020945 ISBN-13(EAN): 9780081020944
Издательство: Elsevier Science
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Цена: 27791.00 р.
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Описание: Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic.

Nitride Wide Bandgap Semiconductor

Автор: Hao
Название: Nitride Wide Bandgap Semiconductor
ISBN: 1498745121 ISBN-13(EAN): 9781498745123
Издательство: Taylor&Francis
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Цена: 26796.00 р.
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Описание: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).

Wide Bandgap Semiconductors

Автор: Takahashi
Название: Wide Bandgap Semiconductors
ISBN: 3540472347 ISBN-13(EAN): 9783540472346
Издательство: Springer
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Цена: 26122.00 р.
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Описание: This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

After a review of the basic physics of WBGS and the rele ance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the effect of defects on device performance are highlighted and solutions proposed based on recent studies.

Microcavities and Photonic Bandgaps: Physics and Applications

Автор: J.G. Rarity; Claude Weisbuch
Название: Microcavities and Photonic Bandgaps: Physics and Applications
ISBN: 0792341708 ISBN-13(EAN): 9780792341703
Издательство: Springer
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Цена: 50172.00 р.
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Описание: Proceedings of the NATO Advanced Study Institute on `Quantum Optics in Wavelength Scale Structures`, Cargese, Corsica, August 26-September 2, 1995

Fundamentals of Power Semiconductor Devices

Автор: B. Jayant Baliga
Название: Fundamentals of Power Semiconductor Devices
ISBN: 1489977651 ISBN-13(EAN): 9781489977656
Издательство: Springer
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Цена: 22201.00 р.
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Описание: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.

Semiconductor Devices for Power Conditioning

Автор: P. Roggwiller
Название: Semiconductor Devices for Power Conditioning
ISBN: 1468472658 ISBN-13(EAN): 9781468472653
Издательство: Springer
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Цена: 6986.00 р.
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Описание: The Brown Boveri Symposia are by now part of firmly established tradition. This is the seventh event in a series which was initiated shortly afer Corporate Research was established as a separate entity within our Company; the Symposia are held every other year. The themes to date have been 1969 Flow Research on Blading 1971 Real-Time Control of Electric Power Systems 1973 High-Temperature Materials in Gas Turbines 1975 Nonemissive Electrooptic Displays 1977 Current Interruption in High-Voltage Networks 1979 Surges in High-Voltage Networks 1981 Semiconductor Devices for Power Conditioning Why have we chosen these titles? At the outset we established certain selection criteria; we felt that a subject for a Symposium should fulfill the following require- ments: It should characterize a part of a thoroughly scientific discipline; in other words, it should describe an area of scholarly study and research. It should be of current interest in the sense that important results have recently been obtained and considerable research effort is underway in the international scientific community. It should bear some relation to the scientific and technological acitivity of our Company. Let us look at the requirement "current interest": Some of the topics on the list have been the subject of research for several decades, some even from the beginning of the century. One might wonder, then, why such fields could be regarded as particularly timely in the 1960s and 1970s. A few remarks on this subject therefore are in order.

Microcavities and Photonic Bandgaps: Physics and Applications

Автор: J.G. Rarity; Claude Weisbuch
Название: Microcavities and Photonic Bandgaps: Physics and Applications
ISBN: 9401066264 ISBN-13(EAN): 9789401066266
Издательство: Springer
Рейтинг:
Цена: 50172.00 р.
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Описание: Proceedings of the NATO Advanced Study Institute on `Quantum Optics in Wavelength Scale Structures`, Cargese, Corsica, August 26-September 2, 1995


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