Spectroscopy of Semiconductors, Wei Lu; Ying Fu

Автор: Popov A.
Название: Disordered Semiconductors. Physics and Application, -Cambridge Scholars Publishing, 2018, 206 p. ISBN 9814774375 переплет СОЕДИНЕННОЕ КОРОЛЕВСТВО
ISBN: 9814774375 ISBN-13(EAN): 9789814774376
Издательство: Taylor&Francis
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Описание: Devices based on disordered semiconductors have wide applications. This textbook connects characteristic features of the atomic and electronic structures of disordered semiconductors and the device design process on the basis of these materials.

Автор: G. Abstreiter; Atilla Aydinli; J.P. Leburton
Название: Optical Spectroscopy of Low Dimensional Semiconductors
ISBN: 9401063516 ISBN-13(EAN): 9789401063517
Издательство: Springer
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Описание: Proceedings of the NATO Advanced Study Institute, Ankara and Antalya, Turkey, 9-20 September 1996

Автор: Mikla, Victor V.
Название: Trap Level Spectroscopy in Amorphous Semiconductors
ISBN: 0323165036 ISBN-13(EAN): 9780323165037
Издательство: Elsevier Science
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Описание: Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.

Автор: Claudia S. Schnohr; Mark C. Ridgway
Название: X-Ray Absorption Spectroscopy of Semiconductors
ISBN: 3662443619 ISBN-13(EAN): 9783662443613
Издательство: Springer
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Описание: Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.

Название: Capacitance spectroscopy of semiconductors
ISBN: 9814774545 ISBN-13(EAN): 9789814774543
Издательство: Taylor&Francis
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Описание: Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.

Автор: Claudia S. Schnohr; Mark C. Ridgway
Название: X-Ray Absorption Spectroscopy of Semiconductors
ISBN: 3662522128 ISBN-13(EAN): 9783662522127
Издательство: Springer
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Описание: Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.

Автор: Lu
Название: Spectroscopy of Semiconductors
ISBN: 3319949527 ISBN-13(EAN): 9783319949529
Издательство: Springer
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Цена: 18167.00 р.
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Описание: 1 Optical Spectral Measurement. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 Prism to disperse light . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.2 Diffraction grating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81.3 Fourier transform spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111.4 Modulation spectroscopy based on Fourier transform . . . . . . . . . . . . . 141.5 A few key notes in spectral measurement . . . . . . . . . . . . . . . . . . . . . . . 16References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192 Introduction to Physics and Optical Properties of Semiconductors . . . 212.1 Energy band structure of electron state . . . . . . . . . . . . . . . . . . . . . . . . . 212.2 Lattice vibration and phonon spectrum . . . . . . . . . . . . . . . . . . . . . . . . . 362.3 Light-matter interaction and optical spectrum . . . . . . . . . . . . . . . . . . . 422.4 Polariton and spectral analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 633 Reflection and Transmission . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 653.1 Fresnel's equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 663.2 Reflection and transmission by a thin film . . . . . . . . . . . . . . . . . . . . . . 723.3 Harmonic oscillator model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 783.4 Kramers-Kronig relationship . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 833.5 Thin film on substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 984 Photoluminescence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 994.1 Basic photoluminescence theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1014.2 Optical transitions in low-dimensional structures . . . . . . . . . . . . . . . . 1114.3 Photoluminescence of quantum well . . . . . . . . . . . . . . . . . . . . . . . . . . . 1244.4 V-grooved quantum wire . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1274.5 Quantum dot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1334.6 Multiphoton excitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .x Contents5 Modulation Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1455.1 Third-derivative modulation spectroscopy . . . . . . . . . . . . . . . . . . . . . . 1475.2 Photo-modulated reflectance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1505.3 Thermo-modulation spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1555.4 Piezo-modulated reflectance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1656 Photocurrent Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1676.1 Basics of quantum we

Автор: Lucia Romano
Название: Defects in Semiconductors,91
ISBN: 0128019352 ISBN-13(EAN): 9780128019351
Издательство: Elsevier Science
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Описание:

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.

Автор: Stephan Weber, Candido Duarte
Название: Circuit Design: Anticipate, Analyze, Exploit Variations: Statistical Methods and Optimization
ISBN: 8793379757 ISBN-13(EAN): 9788793379756
Издательство: Taylor&Francis
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Описание: Provides best-practise manual methods and links them tightly to up-to-date automation algorithms. This book includes tractable examples and explains key techniques. The book will enable readers to select and setup suitable methods for each design task - knowing their prerequisites, advantages and their limitations.

Автор: Robert Fairman, Boris Ushkov
Название: Semiconductors for photocatalysis
ISBN: 0128117273 ISBN-13(EAN): 9780128117279
Издательство: Elsevier Science
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Описание:

Semiconductors for Photocatalysis, Volume 97 covers the latest breakthrough research and exciting developments in semiconductor photocatalysts and electrodes for water splitting and CO₂ reduction. It includes a broad range of materials such as metal-oxides, metal-nitrides, silicon, III-V semiconductors, and the emerging layered compounds. New to this volume are chapters covering the Fundamentals of Semiconductor Photoelectrodes, Charge Carrier Dynamics in Metal Oxide Photoelectrodes for Water Oxidation, Photophysics and Photochemistry at the Semiconductor/Electrolyte Interface for Solar Water Splitting, V Semiconductor Photoelectrodes, III-Nitride Semiconductor Photoelectrodes, and Rare Earth Containing Materials for Photoelectrochemical Water Splitting Applications. In addition, the design and modeling of photocatalysts and photoelectrodes and the fundamental mechanisms of water splitting and CO₂ reduction is also discussed.

Автор: Joseph R. Lakowicz
Название: Principles of Fluorescence Spectroscopy
ISBN: 1489978801 ISBN-13(EAN): 9781489978806
Издательство: Springer
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Цена: 11313.00 р.
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Описание: Building upon the strengths of its popular predecessors, the third edition of this established classic maintains its emphasis on basics, while updating the examples to include recent progress. Includes a CD-ROM reproducing all artwork, for use in lecture slides.

Автор: Velichko Oleg
Название: Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals
ISBN: 1786347156 ISBN-13(EAN): 9781786347152
Издательство: World Scientific Publishing
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Описание:

This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.

Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.