Автор: G. Abstreiter; Atilla Aydinli; J.P. Leburton Название: Optical Spectroscopy of Low Dimensional Semiconductors ISBN: 9401063516 ISBN-13(EAN): 9789401063517 Издательство: Springer Рейтинг: Цена: 27950.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Study Institute, Ankara and Antalya, Turkey, 9-20 September 1996
Автор: Mikla, Victor V. Название: Trap Level Spectroscopy in Amorphous Semiconductors ISBN: 0323165036 ISBN-13(EAN): 9780323165037 Издательство: Elsevier Science Рейтинг: Цена: 18275.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.
Автор: Claudia S. Schnohr; Mark C. Ridgway Название: X-Ray Absorption Spectroscopy of Semiconductors ISBN: 3662443619 ISBN-13(EAN): 9783662443613 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
Название: Capacitance spectroscopy of semiconductors ISBN: 9814774545 ISBN-13(EAN): 9789814774543 Издательство: Taylor&Francis Рейтинг: Цена: 23580.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.
Автор: Lu Название: Spectroscopy of Semiconductors ISBN: 3319949527 ISBN-13(EAN): 9783319949529 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Devices based on disordered semiconductors have wide applications. This textbook connects characteristic features of the atomic and electronic structures of disordered semiconductors and the device design process on the basis of these materials.
Автор: Claudia S. Schnohr; Mark C. Ridgway Название: X-Ray Absorption Spectroscopy of Semiconductors ISBN: 3662522128 ISBN-13(EAN): 9783662522127 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
Автор: Lucia Romano Название: Defects in Semiconductors,91 ISBN: 0128019352 ISBN-13(EAN): 9780128019351 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.
The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.
Описание: Provides best-practise manual methods and links them tightly to up-to-date automation algorithms. This book includes tractable examples and explains key techniques. The book will enable readers to select and setup suitable methods for each design task - knowing their prerequisites, advantages and their limitations.
Автор: Joseph R. Lakowicz Название: Principles of Fluorescence Spectroscopy ISBN: 1489978801 ISBN-13(EAN): 9781489978806 Издательство: Springer Рейтинг: Цена: 11313.00 р. Наличие на складе: Поставка под заказ.
Описание: Building upon the strengths of its popular predecessors, the third edition of this established classic maintains its emphasis on basics, while updating the examples to include recent progress. Includes a CD-ROM reproducing all artwork, for use in lecture slides.
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.
Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Описание: Computational Electrodynamics is a vast research field with a wide variety of tools. In physics the principle of gauge invariance plays a pivotal role as a guide towards a sensible formulation of the laws of nature as well as computing the properties of elementary particles using the lattice formulation of gauge theories, yet the gauge principle has played a much less pronounced role in performing computation in classical electrodynamics. In this work the author will demonstrate that starting from the gauge formulation of electrodynamics using the electromagnetic potentials leads to computational tools that can very well compete with the conventional electromagnetic field-based tools. Once accepting the formulation based on gauge fields, the computational code is very transparent due to the mimetic mapping of the electrodynamic variables on the computational grid. Although the illustrations and applications originate from microelectronic engineering, the method has a much larger range of applicability. Therefore this book is of interest to everyone having interest in computational electrodynamics. The volume is organized as follows: In part 1, a detailed introduction and overview is presented of the Maxwell equations as well as the derivation of the current and charge densities is different materials. Semiconductors are responding to electromagnetic fields in a non-linear way and the induced complications are discussed in detail. In part 2, the transition of the theory of electrodynamics, using the gauge potentials, to a formulation that can serve as the gateway to computational code is presented. In part 3, the feasibility and success of the methods of part 2 are demonstrated by a collection of microelectronic device designs. Part 4 focuses on a set of topical themes that brings the reader to the frontier of research in building the simulation tools using the gauge principle in computational electrodynamics.Technical topics discussed in the book include:Electromagnetic Field EquationsConstitutive RelationsDiscretization and Numerical AnalysisFinite Element and Finite Volume MethodsDesign of Integrated Passive Components.
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