Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET), Balwinder Raj, Mamta Khosla, Amandeep Singh
Автор: Balwinder Raj, Mamta Khosla, Amandeep Singh Название: Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) ISBN: 1799813932 ISBN-13(EAN): 9781799813934 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 24948.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized.
Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.
Автор: Dae Mann Kim; Yoon-Ha Jeong Название: Nanowire Field Effect Transistors: Principles and Applications ISBN: 1493945726 ISBN-13(EAN): 9781493945726 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Автор: Dae Mann Kim; Yoon-Ha Jeong Название: Nanowire Field Effect Transistors: Principles and Applications ISBN: 1461481236 ISBN-13(EAN): 9781461481232 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Описание: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Автор: Amit Chaudhry Название: Fundamentals of Nanoscaled Field Effect Transistors ISBN: 1493944827 ISBN-13(EAN): 9781493944828 Издательство: Springer Рейтинг: Цена: 16977.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.
Автор: Amit Chaudhry Название: Fundamentals of Nanoscaled Field Effect Transistors ISBN: 1461468213 ISBN-13(EAN): 9781461468219 Издательство: Springer Рейтинг: Цена: 19591.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.
Автор: Mark Lundstrom; Jing Guo Название: Nanoscale Transistors ISBN: 1441939156 ISBN-13(EAN): 9781441939159 Издательство: Springer Рейтинг: Цена: 16977.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.
Автор: Ahmet Bindal; Sotoudeh Hamedi-Hagh Название: Silicon Nanowire Transistors ISBN: 331927175X ISBN-13(EAN): 9783319271750 Издательство: Springer Рейтинг: Цена: 11179.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology`s true potential for the next generation VLSI.
Описание: This book describes various carbon nanomaterials and their unique properties, and offers a detailed introduction to graphene-carbon nanotube (CNT) hybrids. Further, it discusses the preparation, structures and properties of graphene-CNT hybrids, providing interesting examples of three types of graphene-CNT hybrids with different nanostructures.
Описание: Abstract: Fluctuation phenomenon (both thermal and shot noise) were measured in the junctions of bipolar junction transistors (BJT's) at liquid nitrogen temperatures and beyond. Dissertation Discovery Company and the University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Noise in Bipolar Junction Transistors at Cryogenic Temperatures." by Thomas Edward Wade, was obtained from the University of Florida and is being sold with permission from the author. A free digital copy of this work may also be found in the university's institutional repository, the IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Автор: Yock Название: Biodesign ISBN: 110708735X ISBN-13(EAN): 9781107087354 Издательство: Cambridge Academ Рейтинг: Цена: 12038.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This step-by-step guide to medical technology innovation, now in color, has been rewritten to address the new era of value-based healthcare and globalization. Written by a team of experts, it follows their proven process for identification, invention, and implementation, and provides practical examples and advice through case studies and videos.
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