Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices,
Автор: K.M. Gupta; Nishu Gupta Название: Advanced Semiconducting Materials and Devices ISBN: 3319197576 ISBN-13(EAN): 9783319197579 Издательство: Springer Рейтинг: Цена: 19591.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A wide range of topics are covered, including optoelectronic devices, metal-semiconductor junctions, heterojunctions, MISFETs, LEDs, semiconductor lasers, photodiodes, switching diodes, tunnel diodes, Gunn diodes, solar cells, varactor diodes, IMPATT diodes, and advanced semiconductors.
Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.
Автор: Paul N. Butcher; Norman H. March; Mario P. Tosi Название: Crystalline Semiconducting Materials and Devices ISBN: 1475799020 ISBN-13(EAN): 9781475799026 Издательство: Springer Рейтинг: Цена: 27950.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The Semiconducting Bond . Construction of the Localized X by Linear Combination of n Atomic Orbitals . The Aufbau-Principle of the Crystal Structure of Semiconductors . A Building Principle for Polyanionic Structures . Chemical Bonds and Semiconductivity in Transition-Element Compounds . Electronic Band Structure .
Автор: Paul N. Butcher; Norman H. March; Mario P. Tosi Название: Crystalline Semiconducting Materials and Devices ISBN: 0306421542 ISBN-13(EAN): 9780306421549 Издательство: Springer Рейтинг: Цена: 32652.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The Semiconducting Bond . Construction of the Localized X by Linear Combination of n Atomic Orbitals . The Aufbau-Principle of the Crystal Structure of Semiconductors . A Building Principle for Polyanionic Structures . Chemical Bonds and Semiconductivity in Transition-Element Compounds . Electronic Band Structure .
Автор: A.G. Cullis; John L. Hutchison Название: Microscopy of Semiconducting Materials ISBN: 3642068707 ISBN-13(EAN): 9783642068706 Издательство: Springer Рейтинг: Цена: 36570.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy.
Описание: Semiconducting polymers are of great interest for applications in electroluminescent devices, solar cells, batteries and diodes.
Автор: Robert Fairman Название: Semiconducting Chalcogenide Glass III,80 ISBN: 0127521895 ISBN-13(EAN): 9780127521893 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Нет в наличии.
Описание: Chalcogenide glass is made up of many elements from the Chalcogenide group. This book is a comprehensive overview of designs of various chalcogenide glass devices, including switches, phase inverters, voltage stabilizers, oscillators, indicators and display control circuits, memory devices, and sensors.
Автор: Robert Fairman Название: Semiconducting Chalcogenide Glass II,79 ISBN: 0127521887 ISBN-13(EAN): 9780127521886 Издательство: Elsevier Science Рейтинг: Цена: 31686.00 р. Наличие на складе: Нет в наличии.
Описание: Chalcogenide glass is made up of many elements from the Chalcogenide group. This work presents a comprehensive survey of the properties of chalcogenide glass under various external impacts. It deals with the electrical and optical properties of chalcogenide vitreous semiconductors (CVS).
Автор: M. Neuberger Название: III-V Ternary Semiconducting Compounds-Data Tables ISBN: 1468461672 ISBN-13(EAN): 9781468461671 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The Electronic Prope ties Information Cente has developed the Data Table as a compilation of the most eliable info mation available fo the physical, c ystallog aphic, mechanical, thermal, elect onic, magnetic and optical p ope ties of a given mate ial. Data Tables forme ly se ved as an int oduction to the g aphic data compilations on the mate ial published by the Elect onic ope ties Information Cente, EPIC, as Data Sheets. Although the Data Sheets we e p incipally concerned, according to the scope of the Cente, with electronic and optical data, it is believed that data cove ing the complete p ope ty spect um, is of the f st impo tance to eve y scientist and engineer, whateve his information requi ements. The enthusiastic eception of these Data Tables has confi med this opinion and increasing requests fo this highly selective type of information esulted in the publication of volume 2 in this se ies, "III-V Semiconducting Compounds" in 1971 and "G oup IV Semiconducting Compounds", also in 1971. Recent inte est in the device applications of the te n y semiconducto s, led to the compilation of these Data Tables on the III-V Te n y Semiconducting Compounds. The majo problem in this type of selective data compilation on a semiconducting mate ial, lies in the mate ial specifications. Prope ties may va y so widely with doping, c stallinity, defects, geometric forms and the othe pa amete s of p epa ation, that any attempts at comparison normally fail. On this basis, we have consistently attempted to give the p epa ation methods, ca rier concent ations, and physical form.
Описание: This volume outlines how absorption spectroscopy is important to the investigation of deep-level centers introduced in semiconductors and insulators. It also explains how vibrational spectroscopy determines the atomic structure and symmetry of complexes.
Автор: Victor E. Borisenko Название: Semiconducting Silicides ISBN: 3642640699 ISBN-13(EAN): 9783642640698 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A comprehensive presentation and analysis of properties and methods of formation of semiconducting silicides. Fundamental electronic, optical and transport properties of the silicides collected from recent publications will help readers choose their application in new generations of solid-state devices.
Автор: Eskin, Georgy I. (all-russia Institute Of Light Alloys, Moscow) Eskin, Dmitry G. (brunel University, Uxbridge, Uk) Название: Ultrasonic treatment of light alloy melts, second edition ISBN: 1138075973 ISBN-13(EAN): 9781138075979 Издательство: Taylor&Francis Рейтинг: Цена: 14545.00 р. Наличие на складе: Нет в наличии.
Описание:
Spawned by growing interest in ultrasonic technology and new developments in ultrasonic melt processing, the Second Edition of Ultrasonic Treatment of Light Alloy Melts discusses use of ultrasonic melt treatment in direct-chill casting, shape casting, rapid solidification, zone refining, and more, exploring the effects of power ultrasound on melt degassing, filtration, and refinement in aluminum and magnesium alloys. The fully revised and restructured Second Edition:
Contains new, in-depth coverage of composite and nanocomposite materials
Provides a historical review of the last century of ultrasonic applications to metallurgy
Emphasizes the fundamentals, mechanisms, and applications of ultrasonic melt processing in different light-metal technologies
Features new chapters on ultrasonic grain refinement, refinement of primary solid phases, and semi-solid processing of billets with nondendritic structure
Includes significant updates reflecting results obtained over the past two decades on different scales, from laboratory to full-scale industrial implementations
Complete with many new figures and examples, Ultrasonic Treatment of Light Alloy Melts, Second Edition delivers a comprehensive treatise on ultrasonic melt processing and cavitation, presenting essential guidelines for practical use and further development of the technology.
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