Описание: This thesis investigates the dielectric properties of metal-oxide ceramics at microwave frequencies. It also demonstrates for the first time that a theory of harmonic phonon coupling can effectively predict the complex permittivity of metal oxides as a function of temperature and frequency. Dielectric ceramics are an important class of materials for radio-frequency, microwave and emergent terahertz technologies. Their key property is complex permittivity, the real part of which permits the miniaturisation of devices and the imaginary part of which is responsible for the absorption of electromagnetic energy. Absorption limits the practical performance of many microwave devices such as filters, oscillators, passive circuits and antennas. Complex permittivity as a function of temperature for low-loss dielectrics is determined by measuring the resonant frequency of dielectric resonators and using the radial mode matching technique to extract the dielectric properties.There have been only a handful of publications on the theory of dielectric loss, and their predictions have often been unfortunately unsatisfactory when compared to measurements of real crystals, sometimes differing by whole orders of magnitude. The main reason for this is the lack of accurate data for a harmonic coupling coefficient and phonon eigenfrequencies at arbitrary q vectors in the Brillouin zone. Here, a quantum field theory of losses in dielectrics is applied, using results from density functional perturbation theory, to predict from first principles the complex permittivity of metal oxides as functions of frequency and temperature.
Описание: This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets.
Автор: Tarek I. Zohdi Название: Electromagnetic Properties of Multiphase Dielectrics ISBN: 3642426611 ISBN-13(EAN): 9783642426612 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers models and numerical solution strategies for analyzing the coupled response of materials with tailored dielectric properties by direct simulation using standard laptop/desktop equipment. Covers coupled systems, homogenization theory and more.
Автор: Loucas C. Christophorou; James K. Olthoff; Panayot Название: Gaseous Dielectrics X ISBN: 1461347459 ISBN-13(EAN): 9781461347453 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Автор: Alexander A. Demkov; Alexandra Navrotsky Название: Materials Fundamentals of Gate Dielectrics ISBN: 9048167868 ISBN-13(EAN): 9789048167869 Издательство: Springer Рейтинг: Цена: 27251.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Loucas G. Christophorou; James K. Olthoff Название: Gaseous Dielectrics VIII ISBN: 1461372216 ISBN-13(EAN): 9781461372219 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Gaseous Dielectrics VIII covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics.
Автор: Eric Garfunkel; Evgeni Gusev; Alexander Vul` Название: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ISBN: 0792350073 ISBN-13(EAN): 9780792350071 Издательство: Springer Рейтинг: Цена: 41787.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997
Автор: Eric Garfunkel; Evgeni Gusev; Alexander Vul` Название: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ISBN: 0792350081 ISBN-13(EAN): 9780792350088 Издательство: Springer Рейтинг: Цена: 29209.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Features an extrapolation of ULSI scaling trends and indicates that minimum feature sizes below 0.1 mu and gate thicknesses of. This book is intended for expert scientists and engineers who wish to keep up with research, and students who wish to learn more about the basic research issues relevant to device technology.
Автор: Gianfranco Pacchioni; Linards Skuja; David L. Gris Название: Defects in SiO2 and Related Dielectrics: Science and Technology ISBN: 0792366859 ISBN-13(EAN): 9780792366850 Издательство: Springer Рейтинг: Цена: 41787.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
