Автор: James J Coleman Название: Advances in Semiconductor Lasers,86 ISBN: 0123910668 ISBN-13(EAN): 9780123910660 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Reflecting the truly interdisciplinary nature of the field, this title is part of the Semiconductors and Semimetals series. It is of interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Описание: This updated, second edition textbook provides a thorough and accessible treatment of semiconductor lasers from a design and engineering perspective. It includes both the physics of devices as well as the engineering, designing and testing of practical lasers. The material is presented clearly with many examples provided. Readers of the book will come to understand the finer aspects of the theory, design, fabrication and test of these devices and have an excellent background for further study of optoelectronics.
Описание: This is a specialized book for researchers and technicians of universities and companies who are interested in the fundamentals of RF power semiconductors, their applications and market penetration.Looking around, we see that products using vacuum tube technology are disappearing.
Автор: Consonni Vincent Название: Wide band gap semiconductor nanowires 2 ISBN: 1848216874 ISBN-13(EAN): 9781848216877 Издательство: Wiley Рейтинг: Цена: 22010.00 р. Наличие на складе: Поставка под заказ.
Описание:
This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.
Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.
Автор: Jagadish, Chennupati Название: Nanoscale Semiconductor Lasers ISBN: 012814162X ISBN-13(EAN): 9780128141625 Издательство: Elsevier Science Рейтинг: Цена: 26107.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Nanoscale Semiconductor Lasers focuses on specific issues relating to laser nanomaterials and their use in laser technology. The book presents both fundamental theory and a thorough overview of the diverse range of applications that have been developed using laser technology based on novel nanostructures and nanomaterials. Technologies covered include nanocavity lasers, carbon dot lasers, 2D material lasers, plasmonic lasers, spasers, quantum dot lasers, quantum dash and nanowire lasers. Each chapter outlines the fundamentals of the topic and examines material and optical properties set alongside device properties, challenges, issues and trends.
Dealing with a scope of materials from organic to carbon nanostructures and nanowires to semiconductor quantum dots, this book will be of interest to graduate students, researchers and scientific professionals in a wide range of fields relating to laser development and semiconductor technologies.
Provides an overview of the active field of nanostructured lasers, illustrating the latest topics and applications
Demonstrates how to connect different classes of material to specific applications
Gives an overview of several approaches to confine and control light emission and amplification using nanostructured materials and nano-scale cavities
Автор: Baliga, B. Jayant Название: Wide bandgap Semiconductor Power Devices ISBN: 0081023065 ISBN-13(EAN): 9780081023068 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Wide bandgap semiconductor power devices have been under investigation for more than 35 years. During the last 10 years, gallium nitride and silicon carbide power devices have become commercially available. There has been a flurry of activity around the world to exploit these devices for commercial applications.
Wide Bandgap Semiconductor Power Devices provides readers with a single resource to understand why these devices are superior to the existing silicon power devices. It lays the groundwork for understanding of the array of applications for these devices and the anticipated benefits in energy savings.
Founder of the Power Semiconductor Research Center at North Carolina State University and creator of the IGBT device, Dr. B. Jayant Baliga is one of the highest regarded experts in the field. In Wide bandgap Semiconductor Power Devices Dr. Baliga leads a team of experts to comprehensively review the materials, device physics, design considerations and most relevant applications for these devices.
Covers power electronic devices comprehensively including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
Addresses the key challenges towards the realization of wide bandgap power electronic devices including materials defects and their role in performance and reliability
Provides benefits of wide bandgap semiconductors including opportunities for cost reduction and social impact
Автор: Singisetti Uttam, Razzak Towhidur, Zhang Yuewei Название: Wide Bandgap Semiconductor Electronics and Devices ISBN: 9811216479 ISBN-13(EAN): 9789811216473 Издательство: World Scientific Publishing Рейтинг: Цена: 19008.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: 'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field -- newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Автор: David K Ferry Название: Transport in Semiconductor Mesoscopic Devices (Second Edition) ISBN: 0750331372 ISBN-13(EAN): 9780750331371 Издательство: INGRAM PUBLISHER SERVICES UK Рейтинг: Цена: 15840.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Two intriguing, entertaining short stories. The first is set in Ancient Egypt, where the high priest is plotting to steal gold belonging to the Pharaoh. In the second, Miss Mitzy, a small white poodle, is snatched in a violent raid on Swanky Paws dog beauty parlour. Both stories sweep the reader along with an entertaining, fast-moving narrativ
Автор: Fan Ren and Stephen J Pearton Название: Wide Bandgap Semiconductor-Based Electronics ISBN: 0750325143 ISBN-13(EAN): 9780750325141 Издательство: INGRAM PUBLISHER SERVICES UK Рейтинг: Цена: 25344.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This title was first published in 2001: This in-depth analysis of the foreign policy behaviour of Greece and Spain, which focuses on the role and influence that the two southern member states have had, is particularly suitable for courses of European foreign policy, comparative policy analysis and specialist courses on politics, international relations and European studies.
Автор: Herrick, Robert Название: Reliability Of Semiconductor Lasers And Optoelectronic Devices ISBN: 0128192542 ISBN-13(EAN): 9780128192542 Издательство: Elsevier Science Рейтинг: Цена: 23244.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of
optoelectronics reliability with approachable introductory chapters and a focus on real-world
applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability
qualification, and then presents real-world case studies discussing the principles of reliability and
what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics
devices and the defects that cause premature failure in them and how to control those defects.
Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting
lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic
devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state
lighting, illuminators, and many other applications. This book features contributions from experts
in industry and academia working in these areas and includes numerous practical examples and
case studies.
This book is suitable for new entrants to the field of optoelectronics working in R&D.
Автор: Shadi A. Dayeh Название: Semiconductor Nanowires ISBN: 0128040165 ISBN-13(EAN): 9780128040164 Издательство: Elsevier Science Рейтинг: Цена: 30318.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. Includes experts contributors who review the most important recent literatureContains a broad view, including examination of semiconductor nanowires
Автор: Liao, Meiyong Название: Ultra-wide Bandgap Semiconductor Materials ISBN: 0128154683 ISBN-13(EAN): 9780128154687 Издательство: Elsevier Science Рейтинг: Цена: 30991.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride.
Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials
Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance
Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
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