Описание: Abstract: GaN based devices have reached a point in terms of processing maturity where the favorable wide-band gap related properties can be implemented in several commercial and military applications. However, long term reliability continues to affect large scale integration of such devices, specifically the potential of AlGaN/GaN High Electron Mobility Transistors (HEMTs), due to the indefinite nature of defects in the structure and mechanisms of performance degradation relevant to such defects. Recent efforts have begun to concentrate more on the bulk properties of the GaN buffer on which the heterostructure is grown, and how defects distributed in the buffer can affect the performance under various operating schemes. This dissertation discusses numerical simulator based investigation of the numerous possibilities by which such point defects can affect electrical behavior. For HEMTs designed for satellite communication systems, proton irradiation results indicate changes in the device parasitics resulting in degradation of RF parameters. Assumption of such radiation damage introducing fast traps indicate severe degradation far exceeding experimental observation. For power switching applications, the necessity of accurately capturing as-grown defects was realized when modeling current relaxation during bias switching. Ability to introduce multiple trap levels in the material bulk aided in achieving simulation results replicating experimental results more accurately than published previously. Impact of factors associated with such traps, either associated with discrete energy levels or band-like distribution in energy, on the nature of current relaxation characterized by its derivative has been presented. Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors" by Shrijit Mukherjee, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Автор: Tobias Erlbacher Название: Lateral Power Transistors in Integrated Circuits ISBN: 3319004999 ISBN-13(EAN): 9783319004990 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.
Описание: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models.
Автор: Tarek Zaki Название: Short-Channel Organic Thin-Film Transistors ISBN: 3319369806 ISBN-13(EAN): 9783319369808 Издательство: Springer Рейтинг: Цена: 13059.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature fabrication process. the masks exhibit excellent stiffness and stability, thus allowing OTFTs with submicrometer channel lengths and superb device uniformity to be patterned.
Автор: Shepherd William Et Al Название: Electricity Generation Using Wind Power (Second Edition) ISBN: 9813148659 ISBN-13(EAN): 9789813148659 Издательство: World Scientific Publishing Рейтинг: Цена: 15048.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Is wind power the answer to our energy supply problems? Is there enough wind for everyone? Is offshore generation better than onshore generation? Can a roof-mounted wind turbine generate enough electricity to supply a typical domestic household?
Electricity Generation Using Wind Power (2nd Edition) answers these pressing questions through its detailed coverage of the different types of electrical generator machines used, as well as the power electronic converter technologies and control principles employed. Also covered is the integration of wind farms into established electricity grid systems, plus environmental and economic aspects of wind generation.
Written for technically minded readers, especially electrical engineers concerned with the possible use of wind power for generating electricity, it incorporates some global meteorological and geographical features of wind supply plus a survey of past and present wind turbines. Included is a technical assessment of the choice of turbine sites. The principles and analysis of wind power conversion, transmission and efficiency evaluation are described.
This book includes worked numerical examples in some chapters, plus end of chapter problems and review questions, with answers. As a textbook it is pitched at the level of final year undergraduate engineering study but may also be useful as a textbook or reference for wider technical studies.
Автор: Tobias Erlbacher Название: Lateral Power Transistors in Integrated Circuits ISBN: 3319345206 ISBN-13(EAN): 9783319345208 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.
Автор: Ye Zhou Название: Semiconducting Metal Oxide Thin-Film Transistors ISBN: 0750325542 ISBN-13(EAN): 9780750325547 Издательство: INGRAM PUBLISHER SERVICES UK Рейтинг: Цена: 25344.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Patrick McGorry has transformed the lives of thousands of young people through early intervention and a holistic approach to mental health care. Here, he presents his plan for mental wealth for all Australians - he wants to ensure that all Australians have every chance for a fulfilling and mentally healthy life, crucially supported by stigma-free access to humane and effective mental health care.
