Carbide in Special Steel: Formation Mechanism and Control Technology, Li Jing, Shi Chengbin
Автор: Cary Y. Yang; M.Mahmudur Rahman; Gary L. Harris Название: Amorphous and Crystalline Silicon Carbide IV ISBN: 3642848060 ISBN-13(EAN): 9783642848063 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Silicon carbide and other group IV-IV materials in theiramorphous, microcrystalline, and crystalline forms have awide variety of applications.The contributions to thisvolume report recent developments and trends in the field.
Описание: Boron carbide is a superhard and lightweight ceramic material. As a result of these characteristics, it used as a protective component in bulletproof vests, tank armour and also has many other industrial applications (e.g., tooling, abrasives). Research on boron carbide remains active given a long-standing challenge to understand its complex failure behavior in extreme environments owing to its unique microstructure and mechanical properties, where many current efforts are underway to improve its behavior through microstructure alteration via additives that form secondary phases, chemical doping, and altering the chemical composition of the boron-to-carbon ratio in the crystal structure. This book covers some of the key challenges involving boron carbide that are currently being studied by many materials scientists and ceramists. The authors who are active in this research field have prepared the chapters for this book and specific topics covered highlight the state-of-the art research in structure, processing, properties and applications. The organization of the book is designed to provide an easy understanding for students and professionals interested in advanced material for novel applications.
Автор: S. Somiya; Y. Inomata Название: Silicon Carbide Ceramics ISBN: 1851665617 ISBN-13(EAN): 9781851665617 Издательство: Springer Рейтинг: Цена: 49631.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Silicon carbides have major industrial uses as high temperature structural ceramic materials. These two volumes are translated from the Japanese and provide a comprehensive account of the seminal work going on in Japan.
Описание: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Автор: Anderson Casan Название: Tungsten Carbide: Synthesis and Implementation ISBN: 1632384574 ISBN-13(EAN): 9781632384577 Издательство: Неизвестно Цена: 16553.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Stephen Saddow Название: Silicon Carbide Biotechnology ISBN: 0128029935 ISBN-13(EAN): 9780128029930 Издательство: Elsevier Science Рейтинг: Цена: 23244.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: "
Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, Second Edition, "provides the latest information on this wide-band-gap semiconductor material that the body does not reject as a foreign (i.e., not organic) material and its potential to further advance biomedical applications.
SiC devices offer high power densities and low energy losses, enabling lighter, more compact, and higher efficiency products for biocompatible and long-term in vivo applications, including heart stent coatings, bone implant scaffolds, neurological implants and sensors, glucose sensors, brain-machine-interface devices, smart bone implants, and organ implants.
This book provides the materials and biomedical engineering communities with a seminal reference book on SiC for developing technology, and is a resource for practitioners eager to identify and implement advanced engineering solutions to their everyday medical problems for which they currently lack long-term, cost-effective solutions. Discusses the properties, processing, characterization, and application of silicon carbide biomedical materials and related technologyAssesses literature, patents, and FDA approvals for clinical trials, enabling rapid assimilation of data from current disparate sources and promoting the transition from technology R&D, to clinical trials Includes more on applications and devices, such as SiC nanowires, biofunctionalized devices, micro-electrode arrays, heart stent/cardiovascular coatings, and continuous glucose sensors, in this new edition
Автор: Dudley Название: Silicon Carbide 2008 — Materials, Processing and Devices ISBN: 1605110396 ISBN-13(EAN): 9781605110394 Издательство: Cambridge Academ Рейтинг: Цена: 13464.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices.
Описание: Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. . For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. . . This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions.
Название: Advancing silicon carbide electronics technology ii ISBN: 1644900661 ISBN-13(EAN): 9781644900666 Издательство: Неизвестно Рейтинг: Цена: 22990.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book presents an in-depth review and analysis of Silicon Carbide device processing. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).
Автор: Fraley Bill Название: Silicon Carbide Devices and Technology ISBN: 1632384140 ISBN-13(EAN): 9781632384140 Издательство: Неизвестно Цена: 25749.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book elaborately discusses the silicon carbide devices and their technology. Lately, a few Silicon Carbide (SiC ) power devices like metal-oxide-semiconductor field-effect-transistors (MOSFETs), Schottky-barrier diodes (SBDs), junction FETs (JFETs), and their combined modules have been introduced in the market. However, to securely supply them and decrease their cost, further enhancements for material characterizations as well as for device processing are still required. This book comprehensively elucidates current technologies on processing, modeling, characterization, manufacturing, and other important aspects of SiC devices. The aim of this book is to serve as a helpful source of information for advancements in SiC devices.
Автор: Latu-Romain Название: Silicon Carbide One-dimensional Nanostructures ISBN: 1848217978 ISBN-13(EAN): 9781848217973 Издательство: Wiley Рейтинг: Цена: 22010.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si-SiC core-shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout-diffusion.
Автор: Mahmud M. Rahman; Cary Y.-W. Yang; Gary L. Harris Название: Amorphous and Crystalline Silicon Carbide II ISBN: 3642750508 ISBN-13(EAN): 9783642750502 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume contains written versions of the papers presented at the Second Inter- national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem- ber 15 and 16, 1988.
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