Название: Wide Bandgap Semiconductor Based Micro/Nano Devices ISBN: 3038978426 ISBN-13(EAN): 9783038978428 Издательство: Неизвестно Рейтинг: Цена: 6901.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
Автор: Arie van Staveren; Chris J.M. Verhoeven; Arthur H. Название: Structured Electronic Design ISBN: 0792372832 ISBN-13(EAN): 9780792372837 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Aiming to systemize analog design, this book describes the structured electronic design of high-performance harmonic oscillators and bandgap references. It helps both the experienced and trainee designer to come to grips with the design of analog circuits. The presented method is illustrated by several well- described design examples.
Автор: Singisetti Uttam, Razzak Towhidur, Zhang Yuewei Название: Wide Bandgap Semiconductor Electronics and Devices ISBN: 9811216479 ISBN-13(EAN): 9789811216473 Издательство: World Scientific Publishing Рейтинг: Цена: 19008.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: 'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field -- newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Автор: Takahashi Название: Wide Bandgap Semiconductors ISBN: 3540472347 ISBN-13(EAN): 9783540472346 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related
optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN
FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap
semiconductors and related optoelectronics devices.
After a review of the basic physics of WBGS and the rele
ance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and
gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the
properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the
effect of defects on device performance are highlighted and solutions proposed based on recent studies.
Автор: Fan Ren and Stephen J Pearton Название: Wide Bandgap Semiconductor-Based Electronics ISBN: 0750325143 ISBN-13(EAN): 9780750325141 Издательство: INGRAM PUBLISHER SERVICES UK Рейтинг: Цена: 25344.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This title was first published in 2001: This in-depth analysis of the foreign policy behaviour of Greece and Spain, which focuses on the role and influence that the two southern member states have had, is particularly suitable for courses of European foreign policy, comparative policy analysis and specialist courses on politics, international relations and European studies.
Автор: Ojo Название: Next Generation Multilayer Graded Bandgap Solar Cells ISBN: 3319966669 ISBN-13(EAN): 9783319966663 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book will guide Photovoltaics researchers in a new way of thinking about harvesting light energy from all wavelengths of the solar spectrum. It closes the gap between general solar cells books and photovoltaics journal articles, by focusing on the latest developments in our understanding of solid-state device physics. The material presented is experimental and based on II-VI thin-film materials, mainly CdTe-based solar cells. The authors describe the use of new device design, based on multilayer graded bandgap configuration, using CdTe-based solar cells. The authors also explain how the photo-generated currents can be enhanced using multi-step charge carrier production. The possibility of fabricating these devices using low-cost and scalable electroplating is demonstrated. The value of electroplating for large area electronic devices such as PV solar panels, display devices and nano-technology devices are also demonstrated. By enabling new understanding of the engineering of electroplated semiconductor materials and providing an overview of the semiconductor physics and technology, this practical book is ideal to guide researchers, engineers, and manufacturers on future solar cell device designs and fabrications.
Discusses in detail the processes of growths, treatments, solar cell device fabrication and solid state physics, improving readers' understanding of fundamental solid state physics;
Enables future improvements in CdTe-based device efficiency;
Explains the significance of defects in deposited semiconductor materials and interfaces that affect the material properties and resulting device performance.
Автор: A. A. Ojo; W. M. Cranton; I. M. Dharmadasa Название: Next Generation Multilayer Graded Bandgap Solar Cells ISBN: 3030072304 ISBN-13(EAN): 9783030072308 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book will guide Photovoltaics researchers in a new way of thinking about harvesting light energy from all wavelengths of the solar spectrum. It closes the gap between general solar cells books and photovoltaics journal articles, by focusing on the latest developments in our understanding of solid-state device physics. The material presented is experimental and based on II-VI thin-film materials, mainly CdTe-based solar cells. The authors describe the use of new device design, based on multilayer graded bandgap configuration, using CdTe-based solar cells. The authors also explain how the photo-generated currents can be enhanced using multi-step charge carrier production. The possibility of fabricating these devices using low-cost and scalable electroplating is demonstrated. The value of electroplating for large area electronic devices such as PV solar panels, display devices and nano-technology devices are also demonstrated. By enabling new understanding of the engineering of electroplated semiconductor materials and providing an overview of the semiconductor physics and technology, this practical book is ideal to guide researchers, engineers, and manufacturers on future solar cell device designs and fabrications.
Discusses in detail the processes of growths, treatments, solar cell device fabrication and solid state physics, improving readers’ understanding of fundamental solid state physics;Enables future improvements in CdTe-based device efficiency;Explains the significance of defects in deposited semiconductor materials and interfaces that affect the material properties and resulting device performance.
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