Next Generation Multilayer Graded Bandgap Solar Cells, A. A. Ojo; W. M. Cranton; I. M. Dharmadasa
Автор: Ojo Название: Next Generation Multilayer Graded Bandgap Solar Cells ISBN: 3319966669 ISBN-13(EAN): 9783319966663 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book will guide Photovoltaics researchers in a new way of thinking about harvesting light energy from all wavelengths of the solar spectrum. It closes the gap between general solar cells books and photovoltaics journal articles, by focusing on the latest developments in our understanding of solid-state device physics. The material presented is experimental and based on II-VI thin-film materials, mainly CdTe-based solar cells. The authors describe the use of new device design, based on multilayer graded bandgap configuration, using CdTe-based solar cells. The authors also explain how the photo-generated currents can be enhanced using multi-step charge carrier production. The possibility of fabricating these devices using low-cost and scalable electroplating is demonstrated. The value of electroplating for large area electronic devices such as PV solar panels, display devices and nano-technology devices are also demonstrated. By enabling new understanding of the engineering of electroplated semiconductor materials and providing an overview of the semiconductor physics and technology, this practical book is ideal to guide researchers, engineers, and manufacturers on future solar cell device designs and fabrications.
Discusses in detail the processes of growths, treatments, solar cell device fabrication and solid state physics, improving readers' understanding of fundamental solid state physics;
Enables future improvements in CdTe-based device efficiency;
Explains the significance of defects in deposited semiconductor materials and interfaces that affect the material properties and resulting device performance.
Автор: Singisetti Uttam, Razzak Towhidur, Zhang Yuewei Название: Wide Bandgap Semiconductor Electronics and Devices ISBN: 9811216479 ISBN-13(EAN): 9789811216473 Издательство: World Scientific Publishing Рейтинг: Цена: 19008.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: 'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field -- newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Автор: Baliga, B. Jayant Название: Wide bandgap Semiconductor Power Devices ISBN: 0081023065 ISBN-13(EAN): 9780081023068 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Wide bandgap semiconductor power devices have been under investigation for more than 35 years. During the last 10 years, gallium nitride and silicon carbide power devices have become commercially available. There has been a flurry of activity around the world to exploit these devices for commercial applications.
Wide Bandgap Semiconductor Power Devices provides readers with a single resource to understand why these devices are superior to the existing silicon power devices. It lays the groundwork for understanding of the array of applications for these devices and the anticipated benefits in energy savings.
Founder of the Power Semiconductor Research Center at North Carolina State University and creator of the IGBT device, Dr. B. Jayant Baliga is one of the highest regarded experts in the field. In Wide bandgap Semiconductor Power Devices Dr. Baliga leads a team of experts to comprehensively review the materials, device physics, design considerations and most relevant applications for these devices.
Covers power electronic devices comprehensively including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
Addresses the key challenges towards the realization of wide bandgap power electronic devices including materials defects and their role in performance and reliability
Provides benefits of wide bandgap semiconductors including opportunities for cost reduction and social impact
Автор: Liao, Meiyong Название: Ultra-wide Bandgap Semiconductor Materials ISBN: 0128154683 ISBN-13(EAN): 9780128154687 Издательство: Elsevier Science Рейтинг: Цена: 30991.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride.
Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials
Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance
Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Автор: Takahashi Название: Wide Bandgap Semiconductors ISBN: 3540472347 ISBN-13(EAN): 9783540472346 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related
optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN
FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap
semiconductors and related optoelectronics devices.
After a review of the basic physics of WBGS and the rele
ance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and
gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the
properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the
effect of defects on device performance are highlighted and solutions proposed based on recent studies.
Название: Wide Bandgap Semiconductor Based Micro/Nano Devices ISBN: 3038978426 ISBN-13(EAN): 9783038978428 Издательство: Неизвестно Рейтинг: Цена: 6901.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
Автор: Suganuma, Katsuaki Название: Wide Bandgap Power Semiconductor Packaging ISBN: 0081020945 ISBN-13(EAN): 9780081020944 Издательство: Elsevier Science Рейтинг: Цена: 27791.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic.
Автор: Maciej Krawczak Название: Multilayer Neural Networks ISBN: 3319033905 ISBN-13(EAN): 9783319033907 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book shows that a multilayer neural network can be considered as a multistage system, and that the learning of this class of neural networks can be treated as a special sort of the optimal control problem.
Автор: John R. Wagner, Jr. Название: Multilayer Flexible Packaging ISBN: 0323371000 ISBN-13(EAN): 9780323371001 Издательство: Elsevier Science Рейтинг: Цена: 37055.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Multilayer Flexible Packaging, Second Edition, provides a thorough introduction to the manufacturing and applications of flexible plastic films, covering materials, hardware and processes, and multilayer film designs and applications. The book gives engineers and technicians a better understanding of the capability and limitations of multilayer flexible films and how to use them to make effective packaging. . It includes contributions from world renowned experts and is fully updated to reflect the rapid advances made in the field since 2009, also including an entirely new chapter on the use of bio-based polymers in flexible packaging. The result is a practical, but detailed reference for polymeric flexible packaging professionals, including product developers, process engineers, and technical service representatives. . The materials coverage includes detailed sections on polyethylene, polypropylene, and additives. The dies used to produce multilayer films are explored in the hardware section, and the process engineering of film manufacture is explained, with a particular focus on meeting specifications and targets. In addition, a new chapter has been added on regulations for food packaging – including both FDA and EU regulations.
Автор: Hao Название: Nitride Wide Bandgap Semiconductor ISBN: 1498745121 ISBN-13(EAN): 9781498745123 Издательство: Taylor&Francis Рейтинг: Цена: 26796.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
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