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Mos interface physics, process and characterization, Wang, Shengkai Wang, Xiaolei


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Цена: 13014.00р.
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При оформлении заказа до: 2025-08-18
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Автор: Wang, Shengkai Wang, Xiaolei
Название:  Mos interface physics, process and characterization
Перевод названия: Ван, Шенкай Ван, Сяолей: Физика интерфейса Mos, процесс и характеристика
ISBN: 9781032106274
Издательство: Taylor&Francis
Классификация:


ISBN-10: 1032106271
Обложка/Формат: Hardcover
Страницы: 162
Вес: 0.39 кг.
Дата издания: 05.10.2021
Язык: English
Иллюстрации: 1 tables, black and white; 97 line drawings, black and white; 26 halftones, black and white; 123 illustrations, black and white
Размер: 22.86 x 15.24 x 1.12 cm
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Поставляется из: Европейский союз
Описание: The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure.This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.
Дополнительное описание: Introduction of MOSFET1. Physics of interface2. MOS processes3. MOS characterizations



Free Space Optical Communication: System Design, Modeling, Characterization and Dealing with Turbulence

Автор: A. Arockia Bazil Raj
Название: Free Space Optical Communication: System Design, Modeling, Characterization and Dealing with Turbulence
ISBN: 3110449951 ISBN-13(EAN): 9783110449952
Издательство: Walter de Gruyter
Цена: 22129.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Recent progress in ICT has exceeded our expectations for meeting the requirement of multimedia society in the 21st century. The FSOC is considered to be one of the key technologies for realizing very high speed multi GbPs large-capacity terrestrial and aerospace communications. In FSOC, the optical beam propagation in the turbulent atmosphere is severely affected by various factors suspended in the channel. Wavefront aberration correcting with continuous beam alignment are the key requirements for a successful installation of an FSOC system which are the main contributions in our book. Establishment of FSOC setups, development of accurate weather station, measurement of atmospheric attenuation (Att) and turbulence strength (Cn2), development of new models to predict the Att and Cn2, design of Response Surface Model and Artificial Neural Network based on controller, implementation of neural-controller in FPGA and attaining the BER of 6.4x10^-9 during different outdoor environments. All the original contributions, newness, findings and experimental results etc., are reported in the book. Subject of work; Wireless Optical Communication. The content of the book can be referred by various application designers and/or academicians for working on FSOC transceiver design, laser cutting, laser metrology, laser surgery, beam focusing & pointing, beacon positioning and coupling etc. Further, all necessary MATLAB and VHDL codes are also given on appropriate pages for the readers' quick/ clear understanding.

Low-Frequency Noise in Advanced MOS Devices

Автор: Martin Haartman; Mikael ?stling
Название: Low-Frequency Noise in Advanced MOS Devices
ISBN: 9048174724 ISBN-13(EAN): 9789048174720
Издательство: Springer
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Цена: 19589.00 р.
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Описание: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits.

Advanced Characterization Techniques for Thin Film Solar Cel

Автор: Abou-Ras Daniel
Название: Advanced Characterization Techniques for Thin Film Solar Cel
ISBN: 3527339922 ISBN-13(EAN): 9783527339921
Издательство: Wiley
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Цена: 40384.00 р.
Наличие на складе: Поставка под заказ.

Описание: The book focuses on advanced characterization methods for thin-fi lm solar cells that have proven their relevance both for academic and corporate photovoltaic research and development.

Process and Device Simulation for MOS-VLSI Circuits

Автор: P. Antognetti; D.A. Antoniadis; Robert W. Dutton;
Название: Process and Device Simulation for MOS-VLSI Circuits
ISBN: 9400968442 ISBN-13(EAN): 9789400968448
Издательство: Springer
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Цена: 12157.00 р.
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Описание: Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July 12-23, 1982

Optical Characterization of Thin Solid Films

Автор: Olaf Stenzel; Miloslav Ohl?dal
Название: Optical Characterization of Thin Solid Films
ISBN: 331975324X ISBN-13(EAN): 9783319753249
Издательство: Springer
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Цена: 23757.00 р.
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Описание: This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

Silicon Analog Components: Device Design, Process Integration, Characterization, and Reliability

Автор: El-Kareh Badih, Hutter Lou N.
Название: Silicon Analog Components: Device Design, Process Integration, Characterization, and Reliability
ISBN: 3030150879 ISBN-13(EAN): 9783030150877
Издательство: Springer
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Цена: 11878.00 р.
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Описание: The World Is Analog.- Review of Single-Crystal Silicon Properties.- PN Junctions.- Rectifying and Ohmic Contacts.- Bipolar and Junction Field-Effect Transistors.- High-Voltage and Power Transistors.- Passive Components.- Process Integration.- Mismatch and Noise.- Chip Reliability.

Nano-Scaled Semiconductor Devices: Physics, Modelling and Characterization

Автор: Gutierrez-D Edmundo A.
Название: Nano-Scaled Semiconductor Devices: Physics, Modelling and Characterization
ISBN: 1849199302 ISBN-13(EAN): 9781849199308
Издательство: Неизвестно
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Цена: 32991.00 р.
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Описание: The subject of nano-scaled semiconductor devices and technology is a strategic and emerging area of relevant societal importance in our ubiquitous electronics era. This book is intended for those involved in the research, technology development, and societal-related applications where nano-scaled semiconductor devices are involved.

Vapor Crystal Growth and Characterization

Автор: Ching-Hua Su
Название: Vapor Crystal Growth and Characterization
ISBN: 3030396541 ISBN-13(EAN): 9783030396541
Издательство: Springer
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Цена: 13974.00 р.
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Описание:

The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications.


The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process.


This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.

Physics of high frequency capacitive discharge

Автор: Savinov, V. P. (lomonosov Moscow State University, Moscow, Russia)
Название: Physics of high frequency capacitive discharge
ISBN: 1138600806 ISBN-13(EAN): 9781138600805
Издательство: Taylor&Francis
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Цена: 33686.00 р.
Наличие на складе: Нет в наличии.

Описание: This book describes the physical mechanism of high-frequency (radio-frequency) capacitive discharge (RFCD) of low and medium pressure and the properties of discharge plasma in detail. The work is intended for scientists engaged in gas discharge physics and low-temperature plasmas, and relevant specialties.

Nonlinear Model-based Process Control

Автор: Rashid M. Ansari; Moses O. Tade
Название: Nonlinear Model-based Process Control
ISBN: 1447111923 ISBN-13(EAN): 9781447111924
Издательство: Springer
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Цена: 18167.00 р.
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Описание: The series Advances in Industrial Control aims to report and encourage technology transfer in control engineering. New theory, new controllers, actuators, sensors, new industrial processes, computer methods, new applications, new philosophies ...

Model and Design of Bipolar and MOS Current-Mode Logic

Автор: Massimo Alioto; Gaetano Palumbo
Название: Model and Design of Bipolar and MOS Current-Mode Logic
ISBN: 1441952586 ISBN-13(EAN): 9781441952585
Издательство: Springer
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Цена: 26120.00 р.
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Описание: Current-Mode digital circuits have been extensively analyzed and used since the early days of digital ICs.


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