Semiconductor memory devices and circuits, Yu, Shimeng
Автор: Baliga Название: Fundamentals of Power Semiconductor Devices ISBN: 3319939874 ISBN-13(EAN): 9783319939872 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Поставка под заказ.
Описание: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
Описание: Making processing information more energy-efficient saves money, reduces energy use, and permits batteries that provide power in mobile devices to run longer or be smaller. The book addresses the need to investigate new approaches to lower energy requirement in computing, communication, and sensing.
Название: Nanoscale Semiconductor Memories ISBN: 1138072648 ISBN-13(EAN): 9781138072640 Издательство: Taylor&Francis Рейтинг: Цена: 13014.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled.
The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.
Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.
The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Автор: Reza, Salim Название: Semiconductor Radiation Detectors ISBN: 1032339411 ISBN-13(EAN): 9781032339412 Издательство: Taylor&Francis Рейтинг: Цена: 8879.00 р. Наличие на складе: Поставка под заказ.
Автор: Carlo Jacoboni; Paolo Lugli Название: The Monte Carlo Method for Semiconductor Device Simulation ISBN: 3709174538 ISBN-13(EAN): 9783709174531 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Описание: The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the science and technology of MIM capacitors for analog CMOS has been included in this book.
Автор: Radojcic Название: Managing More-than-Moore Integration Technology Development ISBN: 3319927000 ISBN-13(EAN): 9783319927008 Издательство: Springer Рейтинг: Цена: 4611.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents the real challenges and experiences of managing an advanced semiconductor technology development and integration program - but using a novelized form.
Описание: This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools.The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits.The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis.
Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific protections.
Автор: Jerzy Ruzyllo Название: Guide To Semiconductor Engineering ISBN: 9811218730 ISBN-13(EAN): 9789811218736 Издательство: World Scientific Publishing Рейтинг: Цена: 7128.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This Guide to Semiconductor Engineering is concerned with semiconductor materials, devices and process technologies which in combination are the driving force behind the unprecedented growth of our technical civilization over the last half a century. This book was conceived and written keeping in mind those who need to learn about semiconductor engineering, who are professionally associated with select aspects of this technical domain and want to see it in a broader context, or are simply interested in semiconductors. In its coverage of semiconductor engineering this Guide departs from textbook-style, monothematic in-depth coverage of topics such as the physics of semiconductors and semiconductor devices, the manufacturing of semiconductor devices and circuits, and the characterization of semiconductor materials. Instead, it covers the entire field of semiconductor engineering in one concise volume with synergistic interactions between various areas clearly identified. It is a holistic approach to the coverage of semiconductor engineering which makes this guide unique among books covering semiconductor related issues available on the market today.
Автор: Babu, Hafiz Md. Hasan Название: Multiple-Valued Computing in Quantum Molecular Biology ISBN: 1032464879 ISBN-13(EAN): 9781032464879 Издательство: Taylor&Francis Рейтинг: Цена: 26030.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Massimo Rudan Название: Physics of Semiconductor Devices ISBN: 3319631535 ISBN-13(EAN): 9783319631530 Издательство: Springer Рейтинг: Цена: 15372.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.
Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman Название: Semiconductor Power Devices ISBN: 3319890115 ISBN-13(EAN): 9783319890111 Издательство: Springer Рейтинг: Цена: 27950.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
