Fundamentals of Power Semiconductor Devices, Baliga
Автор: Takahiro Numai Название: Fundamentals of Semiconductor Lasers ISBN: 4431551476 ISBN-13(EAN): 9784431551478 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Baliga, B,jayant Название: Fundamentals of power semiconductor devices ISBN: 0387473130 ISBN-13(EAN): 9780387473130 Издательство: Springer Рейтинг: Цена: 30039.00 р. Наличие на складе: Поставка под заказ.
Описание: Offers an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. This book shows analytical models for explaining the operation of various power semiconductor devices. It is suitable for practicing engineers in the power semiconductor device community.
Описание: Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium gallium zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current.
Автор: Badih El-Kareh Название: Fundamentals of Semiconductor Processing Technology ISBN: 1461359279 ISBN-13(EAN): 9781461359272 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product.
Автор: Serge Oktyabrsky; Peide Ye Название: Fundamentals of III-V Semiconductor MOSFETs ISBN: 1489984062 ISBN-13(EAN): 9781489984067 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits.
Автор: B. Jayant Baliga Название: Fundamentals of Power Semiconductor Devices ISBN: 1489977651 ISBN-13(EAN): 9781489977656 Издательство: Springer Рейтинг: Цена: 22201.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
Автор: B. Jayant Baliga Название: Fundamentals of Power Semiconductor Devices ISBN: 3030067653 ISBN-13(EAN): 9783030067656 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Поставка под заказ.
Описание: This textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.
Автор: Serge Oktyabrsky; Peide Ye Название: Fundamentals of III-V Semiconductor MOSFETs ISBN: 144191546X ISBN-13(EAN): 9781441915467 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits.
Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman Название: Semiconductor Power Devices ISBN: 331970916X ISBN-13(EAN): 9783319709161 Издательство: Springer Рейтинг: Цена: 32142.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
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