Semiconductor Power Devices, Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman
Автор: Baliga Название: Fundamentals of Power Semiconductor Devices ISBN: 3319939874 ISBN-13(EAN): 9783319939872 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Поставка под заказ.
Описание: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
Описание: Making processing information more energy-efficient saves money, reduces energy use, and permits batteries that provide power in mobile devices to run longer or be smaller. The book addresses the need to investigate new approaches to lower energy requirement in computing, communication, and sensing.
Автор: B. Jayant Baliga Название: Fundamentals of Power Semiconductor Devices ISBN: 3030067653 ISBN-13(EAN): 9783030067656 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Поставка под заказ.
Описание: This textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.
Автор: Cristiano Calligaro; Umberto Gatti; Название: Rad-hard Semiconductor Memories ISBN: 8770220204 ISBN-13(EAN): 9788770220200 Издательство: Taylor&Francis Рейтинг: Цена: 14086.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components.Technical topics discussed in the book include:Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies
Автор: Singisetti Uttam, Razzak Towhidur, Zhang Yuewei Название: Wide Bandgap Semiconductor Electronics and Devices ISBN: 9811216479 ISBN-13(EAN): 9789811216473 Издательство: World Scientific Publishing Рейтинг: Цена: 19008.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: 'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field -- newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman Название: Semiconductor Power Devices ISBN: 331970916X ISBN-13(EAN): 9783319709161 Издательство: Springer Рейтинг: Цена: 32142.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
Описание: This is a specialized book for researchers and technicians of universities and companies who are interested in the fundamentals of RF power semiconductors, their applications and market penetration.Looking around, we see that products using vacuum tube technology are disappearing.
Автор: George Antaki Название: Nuclear Power Plant Safety and Mechanical Integrity ISBN: 0124172482 ISBN-13(EAN): 9780124172487 Издательство: Elsevier Science Рейтинг: Цена: 18528.00 р. Наличие на складе: Поставка под заказ.
Описание: One of the most critical requirements for safe and reliable nuclear power plant operations is the availability of competent maintenance personnel. However, just as the nuclear power industry is experiencing a renaissance, it is also experiencing an exodus of seasoned maintenance professionals due to retirement. The perfect guide for engineers just entering the field or experienced maintenance supervisors who need to keep abreast of the latest industry best practices, Nuclear Power Plant Maintenance: Mechanical Systems, Equipment and Safety covers the most common issues faced in day-to-day operations and provides practical, technically proven solutions. The book also explains how to navigate the various maintenance codes, standards and regulations for the nuclear power industry.
Автор: Baliga, B. Jayant Название: Wide bandgap Semiconductor Power Devices ISBN: 0081023065 ISBN-13(EAN): 9780081023068 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Wide bandgap semiconductor power devices have been under investigation for more than 35 years. During the last 10 years, gallium nitride and silicon carbide power devices have become commercially available. There has been a flurry of activity around the world to exploit these devices for commercial applications.
Wide Bandgap Semiconductor Power Devices provides readers with a single resource to understand why these devices are superior to the existing silicon power devices. It lays the groundwork for understanding of the array of applications for these devices and the anticipated benefits in energy savings.
Founder of the Power Semiconductor Research Center at North Carolina State University and creator of the IGBT device, Dr. B. Jayant Baliga is one of the highest regarded experts in the field. In Wide bandgap Semiconductor Power Devices Dr. Baliga leads a team of experts to comprehensively review the materials, device physics, design considerations and most relevant applications for these devices.
Covers power electronic devices comprehensively including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
Addresses the key challenges towards the realization of wide bandgap power electronic devices including materials defects and their role in performance and reliability
Provides benefits of wide bandgap semiconductors including opportunities for cost reduction and social impact
Автор: Baliga, B,jayant Название: Fundamentals of power semiconductor devices ISBN: 0387473130 ISBN-13(EAN): 9780387473130 Издательство: Springer Рейтинг: Цена: 30039.00 р. Наличие на складе: Поставка под заказ.
Описание: Offers an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. This book shows analytical models for explaining the operation of various power semiconductor devices. It is suitable for practicing engineers in the power semiconductor device community.
Автор: B. Jayant Baliga Название: Fundamentals of Power Semiconductor Devices ISBN: 1489977651 ISBN-13(EAN): 9781489977656 Издательство: Springer Рейтинг: Цена: 22201.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
Автор: P. Roggwiller Название: Semiconductor Devices for Power Conditioning ISBN: 1468472658 ISBN-13(EAN): 9781468472653 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The Brown Boveri Symposia are by now part of firmly established tradition. This is the seventh event in a series which was initiated shortly afer Corporate Research was established as a separate entity within our Company; the Symposia are held every other year. The themes to date have been 1969 Flow Research on Blading 1971 Real-Time Control of Electric Power Systems 1973 High-Temperature Materials in Gas Turbines 1975 Nonemissive Electrooptic Displays 1977 Current Interruption in High-Voltage Networks 1979 Surges in High-Voltage Networks 1981 Semiconductor Devices for Power Conditioning Why have we chosen these titles? At the outset we established certain selection criteria; we felt that a subject for a Symposium should fulfill the following require- ments: It should characterize a part of a thoroughly scientific discipline; in other words, it should describe an area of scholarly study and research. It should be of current interest in the sense that important results have recently been obtained and considerable research effort is underway in the international scientific community. It should bear some relation to the scientific and technological acitivity of our Company. Let us look at the requirement "current interest": Some of the topics on the list have been the subject of research for several decades, some even from the beginning of the century. One might wonder, then, why such fields could be regarded as particularly timely in the 1960s and 1970s. A few remarks on this subject therefore are in order.
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