Porous silicon: from formation to applications: optoelectronics, microelectronics, and energy technology applications, volume three, Latham, Gloria (honorary Senior Lecturer, Faculty Of Education, Honorary Senior Lecturer, Faculty Of Education, The University Of Sydney) Malone, Kare
Описание: This book, the third entry in a three-volume set covering all aspects of porous silicon formation and applications, focuses on applications of porous silicon in optoelectronics, microelectronics, and energy technologies. It highlights the features of fabrication and performance of several forms of optoelectronics, microelectronics, and energy te
Описание: This book aims to provide a comprehensive reference into the critical subject of failure and degradation in organic materials, used in optoelectronics and microelectronics systems and devices. Readers in different industrial sectors, including microelectronics, automotive, lighting, oil/gas, and petrochemical will benefit from this book. Several case studies and examples are discussed, which readers will find useful to assess and mitigate similar failure cases. More importantly, this book presents methodologies and useful approaches in analyzing a failure and in relating a failure to the reliability of materials and systems.
Название: Nanoscale Silicon Devices ISBN: 113874932X ISBN-13(EAN): 9781138749320 Издательство: Taylor&Francis Рейтинг: Цена: 9645.00 р. Наличие на складе: Поставка под заказ.
Описание: Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Автор: Jose Martinez-Duart Название: Nanotechnology for Microelectronics and Optoelectronics, ISBN: 0080445535 ISBN-13(EAN): 9780080445533 Издательство: Elsevier Science Рейтинг: Цена: 26528.00 р. Наличие на складе: Поставка под заказ.
Описание: When solids are reduced to the nanometer scale, they exhibit new and exciting behaviours which constitute the basis for a new generation of electronic devices. This title outlines the fundamental solid-state physics concepts that explain the properties of matter caused by this reduction of solids to the nanometer scale.
Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.
In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.
Автор: R.C. Alferness; Theodor Tamir; W.K. Burns; J.F. Do Название: Guided-Wave Optoelectronics ISBN: 3642970761 ISBN-13(EAN): 9783642970764 Издательство: Springer Рейтинг: Цена: 10448.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Specifically, the amalgamation of electronic and optics compo- nents into an integrated optoelectronics format is expected to provide a wide range of systems having miniaturized, high speed, broad band and reliable components for telecommunications, data processing, optical computing and other applications in the near and far future.
This book features the selected articles from the 25th annual symposiums Connecticut Microelectronics and Optoelectronics Consortium (CMOC), that focus on micro/nano-electronics and optoelectronics/Nano-photonics, to cover not only the technologies, but also the applications ranging from biosensors/nano-biosystems, to cyber security.
Enabling materials research involving growth and characterization of novel devices such as multi-bit nonvolatile random access memory with fast erase, high performance circuits, and their potential applications in developing new high-speed systems. Other articles focus on emerging nanoelectronic devices including topological insulators, spatial wavefunction switching (SWS) FETs as compact high-speed 2-bit SRAM circuits, quantum dot channel (QDC) FETs. Fundamental work on critical layer thickness in ZnSe/GaAs and other material systems impacts electronic and photonic devise integrating mismatched layers are also reported. While another article investigates linearly graded GaAsP-GaAs system with emphasis on strain relaxation.
Based on these technologies, area of analyzes multiple junction solar cells using semiconductors with different energy gaps, as a possible application were also featured; Pixel characterization of protein-based retinal implant, as well as a low-power and low-data-rate (100 kbps) fully integrated CMOS impulse radio ultra-wideband (IR-UWB) transmitter were investigated as a potential candidate for biomedical application. While other articles looked at carbon nanofibers/nanotubes for electrochemical sensing. In the area of cyber security, two articles present encrypted electron beam lithography fabricated nanostructures for authentication and nano-signatures for the identification of authentic electronic components.
In summary, papers presented in this volume involve various aspects of high performance materials and devices for implementing high-speed electronic systems.
Описание: This book aims to provide a comprehensive reference into the critical subject of failure and degradation in organic materials, used in optoelectronics and microelectronics systems and devices. Readers in different industrial sectors, including microelectronics, automotive, lighting, oil/gas, and petrochemical will benefit from this book. Several case studies and examples are discussed, which readers will find useful to assess and mitigate similar failure cases. More importantly, this book presents methodologies and useful approaches in analyzing a failure and in relating a failure to the reliability of materials and systems.
Автор: Yong Ping Xu Название: MEMS Silicon Oscillating Accelerometers and Readout Circuits ISBN: 877022045X ISBN-13(EAN): 9788770220453 Издательство: Taylor&Francis Рейтинг: Цена: 14086.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Most MEMS accelerometers on the market today are capacitive accelerometers that are based on the displacement sensing mechanism. This book is intended to cover recent developments of MEMS silicon oscillating accelerometers (SOA), also referred to as MEMS resonant accelerometer. As contrast to the capacitive accelerometer, the MEMS SOA is based on the force sensing mechanism, where the input acceleration is converted to a frequency output. MEMS Silicon Oscillating Accelerometers and Readout Circuits consists of six chapters and covers both MEMS sensor and readout circuit, and provides an in-depth coverage on the design and modelling of the MEMS SOA with several recently reported prototypes. The book is not only useful to researchers and engineers who are familiar with the topic, but also appeals to those who have general interests in MEMS inertial sensors. The book includes extensive references that provide further information on this topic.
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.
Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Автор: Korotcenkov, Ghenadii Название: Porous Silicon ISBN: 0367570238 ISBN-13(EAN): 9780367570231 Издательство: Taylor&Francis Рейтинг: Цена: 13779.00 р. Наличие на складе: Поставка под заказ.
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