Описание: Devices based on disordered semiconductors have wide applications. This textbook connects characteristic features of the atomic and electronic structures of disordered semiconductors and the device design process on the basis of these materials.
Название: Capacitance spectroscopy of semiconductors ISBN: 9814774545 ISBN-13(EAN): 9789814774543 Издательство: Taylor&Francis Рейтинг: Цена: 23580.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.
Автор: Lu Название: Spectroscopy of Semiconductors ISBN: 3319949527 ISBN-13(EAN): 9783319949529 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Wei Lu; Ying Fu Название: Spectroscopy of Semiconductors ISBN: 3030069435 ISBN-13(EAN): 9783030069438 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The science and technology related to semiconductors have received significant attention for applications in various fields including microelectronics, nanophotonics, and biotechnologies. Understanding of semiconductors has advanced to such a level that we are now able to design novel system complexes before we go for the proof-of-principle experimental demonstration.This book explains the experimental setups for optical spectral analysis of semiconductors and describes the experimental methods and the basic quantum mechanical principles underlying the fast-developing nanotechnology for semiconductors. Further, it uses numerous case studies with detailed theoretical discussions and calculations to demonstrate the data analysis. Covering structures ranging from bulk to the nanoscale, it examines applications in the semiconductor industry and biomedicine. Starting from the most basic physics of geometric optics, wave optics, quantum mechanics, solid-state physics, it provides a self-contained resource on the subject for university undergraduates. The book can be further used as a toolbox for researching and developing semiconductor nanotechnology based on spectroscopy.
Автор: Mikla, Victor V. Название: Trap Level Spectroscopy in Amorphous Semiconductors ISBN: 0323165036 ISBN-13(EAN): 9780323165037 Издательство: Elsevier Science Рейтинг: Цена: 18275.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.
Автор: Claudia S. Schnohr; Mark C. Ridgway Название: X-Ray Absorption Spectroscopy of Semiconductors ISBN: 3662522128 ISBN-13(EAN): 9783662522127 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
Автор: Marvin L. Cohen; James R. Chelikowsky Название: Electronic Structure and Optical Properties of Semiconductors ISBN: 3540513914 ISBN-13(EAN): 9783540513919 Издательство: Springer Рейтинг: Цена: 9141.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: We began planning and writing this book in thc late 1970$ at thc ugge s stion of Manuel Cardona and Helmut Latsch. We also received considerable eo- couragement and stimulation from colleagues. Same said there was a need for instructional material in tbis area while others emphasized thc utility of a research text. We tried to strike a compromise. Thc figures, tables, and rcferences are included to enable researchcrs to obt81o quickly essential information in this area of semiconductor research. For instructoTS and stu- dents, we attempt to cover same basic ideas abaut electronic structure and semiconductor physics with applications to real, rather than model, solids. Ve \Vish to thank our colleagues and collaborators whose research rc- sults and ideas are presented here. Special thanks are duc to Jim Phillips who illfluellced lIS hoth during ollr formative )'ears and afterwards. We are grateful to Sari Yamagishi for her patience and skill with the typing and production of the manuscript. Finally, we acknowledge the great patience of Helmut Lotsch and Manucl Cardona. llerkeley, CA M.L. Gehen - inncapolis, MN, J.R, Chelikew"ky March 1988 VII Contents 1. Introduction 1 2. Theoretical Concepts and Methods .................... . 4 2.1 Thc One-Electron Model and Band Structure 7 2.2 Properties cf En(k) ......................... . 11 3. Pseudopotentials 16 3.1 The Empirical Pseudopotential Method .......... 20 3.2 Self-Consistent and Ab Initio Pseudopotentials ...... ..... 25 4. Response Functiolls and Density of States . ..
Автор: G. Abstreiter; Atilla Aydinli; J.P. Leburton Название: Optical Spectroscopy of Low Dimensional Semiconductors ISBN: 9401063516 ISBN-13(EAN): 9789401063517 Издательство: Springer Рейтинг: Цена: 27950.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Study Institute, Ankara and Antalya, Turkey, 9-20 September 1996
Описание: This PhD thesis reports on investigations of several oxide-based materials using advanced infrared and Raman spectroscopy techniques and in combination with external stimuli such as high magnetic or electric field, sptial confinement in thin film heterostructures and the radiation with UV light. This leads to new results in the fields of superconductivity, electronic polarization states and nanoscale phenomena. Among these, the observation of anomalous polar moments is of great relevance for understanding the electric-field-induced metal-to-insulator transistion; and the demonstration that confocal Raman spectroscopy of backfolded acoustic photons in metal-oxide multilayers can be used as a powerful characterization tool for monitoring their interface properties and layer thickness is an important technical development for the engineering of such functional oxide heterostructures.
Автор: Pelant, Ivan; Valenta, Jan Название: Luminescence Spectroscopy of Semiconductors ISBN: 0199588333 ISBN-13(EAN): 9780199588336 Издательство: Oxford Academ Рейтинг: Цена: 21780.00 р. Наличие на складе: Поставка под заказ.
Описание: Semiconductor luminescence has been a rapidly expanding field over the last fifty years. Work on various types of luminescence radiation has been taking place but this is the first book that reviews the whole subject of semiconductor luminescence in one coherent volume.
Автор: Claudia S. Schnohr; Mark C. Ridgway Название: X-Ray Absorption Spectroscopy of Semiconductors ISBN: 3662443619 ISBN-13(EAN): 9783662443613 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
Автор: Sambandan Название: Circuit Design Techniques for Non-Crystalline Semiconductors ISBN: 1138073350 ISBN-13(EAN): 9781138073357 Издательство: Taylor&Francis Рейтинг: Цена: 16078.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Crystalline Semiconductors outlines a systematic design approach, including circuit theory, enabling users to synthesize circuits without worrying about the details of device physics.
This book:
Offers examples of how self-assembly can be used as a powerful tool in circuit synthesis
Covers theory, materials, techniques, and applications
Provides starting threads for new research
This area of research is particularly unique since it employs a range of disciplines including materials science, chemistry, mechanical engineering and electrical engineering. Recent progress in complementary polymer semiconductors and fabrication techniques such as ink-jet printing has opened doors to new themes and ideas. The book focuses on the central problem of threshold voltage shift and concepts related to navigating this issue when using non-crystalline semiconductors in electronic circuit design. Designed to give the non-electrical engineer a clear, simplified overview of fundamentals and tools to facilitate practical application, this book highlights design roadblocks and provides models and possible solutions for achieving successful circuit synthesis.
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