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Tunneling Field Effect Transistors, Samuel, T. S. Arun


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Цена: 20671.00р.
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При оформлении заказа до: 2025-07-28
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Автор: Samuel, T. S. Arun   (Т.С. Арун Сэмюэл)
Название:  Tunneling Field Effect Transistors
Перевод названия: Т.С. Арун Сэмюэл: Туннельные полевые транзисторы
ISBN: 9781032348766
Издательство: Taylor&Francis
Классификация:






ISBN-10: 1032348763
Обложка/Формат: Hardback
Страницы: 304
Вес: 0.45 кг.
Дата издания: 01.06.2023
Серия: Materials, devices, and circuits
Иллюстрации: 17 tables, black and white; 5 line drawings, black and white; 15 halftones, color; 227 halftones, black and white; 15 illustrations, color; 232 illust
Размер: 161 x 241 x 26
Читательская аудитория: Tertiary education (us: college)
Подзаголовок: Design, modeling and applications
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Поставляется из: Европейский союз


Photo-Excited Charge Collection Spectroscopy: Probing the traps in field-effect transistors (SpringerBriefs in Physics)

Автор: Seongil Im, Youn-Gyoung Chang, Jae Hoon Kim
Название: Photo-Excited Charge Collection Spectroscopy: Probing the traps in field-effect transistors (SpringerBriefs in Physics)
ISBN: 9400763913 ISBN-13(EAN): 9789400763913
Издательство: Springer
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Цена: 6529.00 р.
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Описание: Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics.

Nanowire Field Effect Transistors: Principles and Applications

Автор: Dae Mann Kim; Yoon-Ha Jeong
Название: Nanowire Field Effect Transistors: Principles and Applications
ISBN: 1493945726 ISBN-13(EAN): 9781493945726
Издательство: Springer
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Цена: 14365.00 р.
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Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.

Nanoelectronics and Nanosystems

Автор: Goser
Название: Nanoelectronics and Nanosystems
ISBN: 3540404430 ISBN-13(EAN): 9783540404439
Издательство: Springer
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Цена: 9141.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Nanoelectronics provides an accessible introduction for prospective and practicing electronic engineers, computer scientists and physicists. The overview covers all aspects from underlying technologies to circuits and systems. The challenge of nanoelectronics is not only to manufacture minute structures but also to develop innovative systems for effective integration of the billions of devices. On the system level, various architectures are presented and important features of systems, such as design strategies, processing power, and reliability are discussed. Many specific technologies are presented, including molecular devices, quantum electronic devices, resonant tunnelling devices, single electron devices, superconducting devices, and even devices for DNA and quantum computing. The book also compares these devices with current silicon technologies and discusses limits of electronics and the future of nanosystems.

Fundamentals of modern VLSI devices /

Автор: Taur, Yuan,
Название: Fundamentals of modern VLSI devices /
ISBN: 1108480020 ISBN-13(EAN): 9781108480024
Издательство: Cambridge Academ
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Цена: 8554.00 р.
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Описание: A thoroughly updated third edition of an classic text, perfect for practical transistor design and in the classroom. It includes a variety of recent developments, reorganized chapters, and additional end-of-chapter homework exercises, making it ideal for senior undergraduate and graduate students taking advanced semiconductor devices courses.

Nanowire Field Effect Transistors: Principles and Applications

Автор: Dae Mann Kim; Yoon-Ha Jeong
Название: Nanowire Field Effect Transistors: Principles and Applications
ISBN: 1461481236 ISBN-13(EAN): 9781461481232
Издательство: Springer
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Цена: 16979.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.

Lateral Power Transistors in Integrated Circuits

Автор: Tobias Erlbacher
Название: Lateral Power Transistors in Integrated Circuits
ISBN: 3319004999 ISBN-13(EAN): 9783319004990
Издательство: Springer
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Цена: 19564.00 р.
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Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

Fundamentals of Nanoscaled Field Effect Transistors

Автор: Amit Chaudhry
Название: Fundamentals of Nanoscaled Field Effect Transistors
ISBN: 1461468213 ISBN-13(EAN): 9781461468219
Издательство: Springer
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Цена: 19591.00 р.
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Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.

Fundamentals of Nanoscaled Field Effect Transistors

Автор: Amit Chaudhry
Название: Fundamentals of Nanoscaled Field Effect Transistors
ISBN: 1493944827 ISBN-13(EAN): 9781493944828
Издательство: Springer
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Цена: 16977.00 р.
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Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.

Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

Автор: Mengqi Fu
Название: Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors
ISBN: 9811334439 ISBN-13(EAN): 9789811334436
Издательство: Springer
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Цена: 18167.00 р.
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Описание: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

Biodesign

Автор: Yock
Название: Biodesign
ISBN: 110708735X ISBN-13(EAN): 9781107087354
Издательство: Cambridge Academ
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Цена: 12038.00 р.
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Описание: This step-by-step guide to medical technology innovation, now in color, has been rewritten to address the new era of value-based healthcare and globalization. Written by a team of experts, it follows their proven process for identification, invention, and implementation, and provides practical examples and advice through case studies and videos.

FinFETs and Other Multi-Gate Transistors

Автор: J.-P. Colinge
Название: FinFETs and Other Multi-Gate Transistors
ISBN: 1441944095 ISBN-13(EAN): 9781441944092
Издательство: Springer
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Цена: 20896.00 р.
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Описание: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits.

High Mobility and Quantum Well Transistors

Автор: Geert Hellings; Kristin De Meyer
Название: High Mobility and Quantum Well Transistors
ISBN: 9400763395 ISBN-13(EAN): 9789400763395
Издательство: Springer
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Цена: 18284.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book explores the use of high mobility semiconductors such as germanium and III-V materials, the need to redesign transistors to work with such materials and the appropriateness of Quantum Well-based transistors for this new stage of transistor evolution.


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