Описание: Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics.
Автор: Dae Mann Kim; Yoon-Ha Jeong Название: Nanowire Field Effect Transistors: Principles and Applications ISBN: 1493945726 ISBN-13(EAN): 9781493945726 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Автор: Goser Название: Nanoelectronics and Nanosystems ISBN: 3540404430 ISBN-13(EAN): 9783540404439 Издательство: Springer Рейтинг: Цена: 9141.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Nanoelectronics provides an accessible introduction for prospective and practicing electronic engineers, computer scientists and physicists. The overview covers all aspects from underlying technologies to circuits and systems. The challenge of nanoelectronics is not only to manufacture minute structures but also to develop innovative systems for effective integration of the billions of devices. On the system level, various architectures are presented and important features of systems, such as design strategies, processing power, and reliability are discussed. Many specific technologies are presented, including molecular devices, quantum electronic devices, resonant tunnelling devices, single electron devices, superconducting devices, and even devices for DNA and quantum computing. The book also compares these devices with current silicon technologies and discusses limits of electronics and the future of nanosystems.
Автор: Taur, Yuan, Название: Fundamentals of modern VLSI devices / ISBN: 1108480020 ISBN-13(EAN): 9781108480024 Издательство: Cambridge Academ Рейтинг: Цена: 8554.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A thoroughly updated third edition of an classic text, perfect for practical transistor design and in the classroom. It includes a variety of recent developments, reorganized chapters, and additional end-of-chapter homework exercises, making it ideal for senior undergraduate and graduate students taking advanced semiconductor devices courses.
Автор: Dae Mann Kim; Yoon-Ha Jeong Название: Nanowire Field Effect Transistors: Principles and Applications ISBN: 1461481236 ISBN-13(EAN): 9781461481232 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Автор: Tobias Erlbacher Название: Lateral Power Transistors in Integrated Circuits ISBN: 3319004999 ISBN-13(EAN): 9783319004990 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.
Автор: Amit Chaudhry Название: Fundamentals of Nanoscaled Field Effect Transistors ISBN: 1461468213 ISBN-13(EAN): 9781461468219 Издательство: Springer Рейтинг: Цена: 19591.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.
Автор: Amit Chaudhry Название: Fundamentals of Nanoscaled Field Effect Transistors ISBN: 1493944827 ISBN-13(EAN): 9781493944828 Издательство: Springer Рейтинг: Цена: 16977.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.
Описание: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Автор: Yock Название: Biodesign ISBN: 110708735X ISBN-13(EAN): 9781107087354 Издательство: Cambridge Academ Рейтинг: Цена: 12038.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This step-by-step guide to medical technology innovation, now in color, has been rewritten to address the new era of value-based healthcare and globalization. Written by a team of experts, it follows their proven process for identification, invention, and implementation, and provides practical examples and advice through case studies and videos.
Автор: J.-P. Colinge Название: FinFETs and Other Multi-Gate Transistors ISBN: 1441944095 ISBN-13(EAN): 9781441944092 Издательство: Springer Рейтинг: Цена: 20896.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits.
Автор: Geert Hellings; Kristin De Meyer Название: High Mobility and Quantum Well Transistors ISBN: 9400763395 ISBN-13(EAN): 9789400763395 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explores the use of high mobility semiconductors such as germanium and III-V materials, the need to redesign transistors to work with such materials and the appropriateness of Quantum Well-based transistors for this new stage of transistor evolution.
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