Tunneling Field Effect Transistors, Samuel, T. S. Arun
Автор: Taur, Yuan, Название: Fundamentals of modern VLSI devices / ISBN: 1108480020 ISBN-13(EAN): 9781108480024 Издательство: Cambridge Academ Рейтинг: Цена: 8554.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A thoroughly updated third edition of an classic text, perfect for practical transistor design and in the classroom. It includes a variety of recent developments, reorganized chapters, and additional end-of-chapter homework exercises, making it ideal for senior undergraduate and graduate students taking advanced semiconductor devices courses.
Автор: Dae Mann Kim; Yoon-Ha Jeong Название: Nanowire Field Effect Transistors: Principles and Applications ISBN: 1461481236 ISBN-13(EAN): 9781461481232 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Автор: Amit Chaudhry Название: Fundamentals of Nanoscaled Field Effect Transistors ISBN: 1461468213 ISBN-13(EAN): 9781461468219 Издательство: Springer Рейтинг: Цена: 19591.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.
Автор: Ioannis Kymissis Название: Organic Field Effect Transistors ISBN: 1441947116 ISBN-13(EAN): 9781441947116 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: As a basic introduction to the subject for practitioners, this text will also be of interest to researchers looking for references that are not part of their subject area, focusing on materials and techniques useful for making integrated circuits.
Автор: Changxin Chen; Yafei Zhang Название: Nanowelded Carbon Nanotubes ISBN: 3642260209 ISBN-13(EAN): 9783642260209 Издательство: Springer Рейтинг: Цена: 16977.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book introduces a novel ultrasonic nanowelding technology of carbon nanotubes (CNTs) to metal electrodes and its application for CNT devices. It will be of interest to graduates, scientists and engineers working on CNTs and related topics.
Описание: Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics.
Автор: Amit Chaudhry Название: Fundamentals of Nanoscaled Field Effect Transistors ISBN: 1493944827 ISBN-13(EAN): 9781493944828 Издательство: Springer Рейтинг: Цена: 16977.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.
Автор: Dae Mann Kim; Yoon-Ha Jeong Название: Nanowire Field Effect Transistors: Principles and Applications ISBN: 1493945726 ISBN-13(EAN): 9781493945726 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Описание: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Автор: Balwinder Raj, Mamta Khosla, Amandeep Singh Название: Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) ISBN: 1799813940 ISBN-13(EAN): 9781799813941 Издательство: Mare Nostrum (Eurospan) Цена: 20513.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.
Автор: Balwinder Raj, Mamta Khosla, Amandeep Singh Название: Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) ISBN: 1799813932 ISBN-13(EAN): 9781799813934 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 24948.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized.
Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.
Автор: Yock Название: Biodesign ISBN: 110708735X ISBN-13(EAN): 9781107087354 Издательство: Cambridge Academ Рейтинг: Цена: 12038.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This step-by-step guide to medical technology innovation, now in color, has been rewritten to address the new era of value-based healthcare and globalization. Written by a team of experts, it follows their proven process for identification, invention, and implementation, and provides practical examples and advice through case studies and videos.
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