Wide Bandgap Semiconductor Spintronics, Litvinov, Vladimir
Новое издание
Название: Wide Bandgap Semiconductor Spintronics ISBN: 9815129201 ISBN-13(EAN): 9789815129205 Издательство: Taylor&Francis Цена: 17762.00 р. Наличие на складе: Есть у поставщикаПоставка под заказ.
Описание: The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures.
Автор: Thomas Schaepers Название: Semiconductor Spintronics ISBN: 3110361671 ISBN-13(EAN): 9783110361674 Издательство: Walter de Gruyter Цена: 11148.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: As the first comprehensive introduction into the rapidly evolving field of spintronics, this textbook covers ferromagnetism in nano-electrodes, spin injection, spin manipulation, and the practical use of these effects in next-generation electronics. Based on foundations in quantum mechanics and solid state physics this textbook guides the reader to the forefront of research and development in the field, based on repeated lectures given by the author. From the content:Low-dimensional semiconductor structuresMagnetism in solidsDiluted magnetic semiconductorsMagnetic electrodesSpin injectionSpin transistorSpin interferenceSpin Hall effectQuantum spin Hall effectTopological insulatorsQuantum computation with electron spins
Автор: Takahashi Название: Wide Bandgap Semiconductors ISBN: 3540472347 ISBN-13(EAN): 9783540472346 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related
optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN
FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap
semiconductors and related optoelectronics devices.
After a review of the basic physics of WBGS and the rele
ance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and
gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the
properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the
effect of defects on device performance are highlighted and solutions proposed based on recent studies.
Описание: This book demonstrates how the new phenomena in the nanometer scale serve as the basis for the invention and development of novel nanoelectronic devices and how they are used for engineering nanostructures and metamaterials with unusual properties. It discusses topics such as superconducting spin-valve effect and thermal spin transport, which are important for developing spintronics; fabrication of nanostructures from antagonistic materials like ferromagnets and superconductors, which lead to a novel non-conventional FFLO-superconducting state; calculations of functional nanostructures with an exotic triplet superconductivity, which are the basis for novel nanoelectronic devices, such as superconducting spin valve, thin-film superconducting quantum interference devices (SQUIDs) and memory-elements (MRAM). Starting with theoretical chapters about triplet superconductivity, the book then introduces new ideas and approaches in the fundamentals of superconducting electronics. It presents various quantum devices based on the new theoretical approaches, demonstrating the enormous potential of the electronics of 21st century - spintronics.The book is useful for a broad audience, including researchers, engineers, PhD graduates, students and others wanting to gain insights into the frontiers of nanoscience.
Автор: Kruger, Michele (csvwater, South Africa) Nel, Hannelie (university Of Johannesburgh, South Africa) Название: Spintronics handbook, second edition: spin transport and magnetism ISBN: 0367777878 ISBN-13(EAN): 9780367777876 Издательство: Taylor&Francis Рейтинг: Цена: 19906.00 р. Наличие на складе: Нет в наличии.
Описание: The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures.
Автор: Hao Название: Nitride Wide Bandgap Semiconductor ISBN: 1498745121 ISBN-13(EAN): 9781498745123 Издательство: Taylor&Francis Рейтинг: Цена: 26796.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
Автор: Liao, Meiyong Название: Ultra-wide Bandgap Semiconductor Materials ISBN: 0128154683 ISBN-13(EAN): 9780128154687 Издательство: Elsevier Science Рейтинг: Цена: 30991.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride.
Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials
Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance
Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Автор: Baliga, B. Jayant Название: Wide bandgap Semiconductor Power Devices ISBN: 0081023065 ISBN-13(EAN): 9780081023068 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Wide bandgap semiconductor power devices have been under investigation for more than 35 years. During the last 10 years, gallium nitride and silicon carbide power devices have become commercially available. There has been a flurry of activity around the world to exploit these devices for commercial applications.
Wide Bandgap Semiconductor Power Devices provides readers with a single resource to understand why these devices are superior to the existing silicon power devices. It lays the groundwork for understanding of the array of applications for these devices and the anticipated benefits in energy savings.
Founder of the Power Semiconductor Research Center at North Carolina State University and creator of the IGBT device, Dr. B. Jayant Baliga is one of the highest regarded experts in the field. In Wide bandgap Semiconductor Power Devices Dr. Baliga leads a team of experts to comprehensively review the materials, device physics, design considerations and most relevant applications for these devices.
Covers power electronic devices comprehensively including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
Addresses the key challenges towards the realization of wide bandgap power electronic devices including materials defects and their role in performance and reliability
Provides benefits of wide bandgap semiconductors including opportunities for cost reduction and social impact
Автор: Xia Название: Semiconductor Spintronics ISBN: 9814327905 ISBN-13(EAN): 9789814327909 Издательство: World Scientific Publishing Рейтинг: Цена: 27720.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results. This monograph summarizes the physical foundation and the experimental results obtained in this field.
Автор: Arnold S. Borukhovich; Alexey V. Troshin Название: Europium Monoxide ISBN: 3030095711 ISBN-13(EAN): 9783030095710 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents the physical characteristics and possible device applications of europium monoxide as well as materials based on it. It reveals the suitability of this material for device applications in super- and semiconductor spin electronics. Ferromagnetic semiconductors like europium monoxide have contributed to a fascinating research field in condensed matter physics. In the book are presented the electronic and magnetic properties and thermal and resonance parameters of this material, its peculiarities in external fields as a function of non-stoichiometry, doping level, both in single-crystal and thin-film states. Particular attention is paid to the possibility to use this monoxide or its solid solutions (composites) unconventionally for creating spin electronics structures which work at room temperature conditions. This book appeals to researchers, graduate students and professionals engaged in the development of semiconductor spin electronics and computer devices, technologists and theoretical physicists. It is important for the calculation, development and creation of spin memory devices for a quantum computer.
Автор: Arnold S. Borukhovich; Alexey V. Troshin Название: Europium Monoxide ISBN: 3319767402 ISBN-13(EAN): 9783319767406 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents the physical characteristics and possible device applications of europium monoxide as well as materials based on it. It reveals the suitability of this material for device applications in super- and semiconductor spin electronics. Ferromagnetic semiconductors like europium monoxide have contributed to a fascinating research field in condensed matter physics. In the book are presented the electronic and magnetic properties and thermal and resonance parameters of this material, its peculiarities in external fields as a function of non-stoichiometry, doping level, both in single-crystal and thin-film states. Particular attention is paid to the possibility to use this monoxide or its solid solutions (composites) unconventionally for creating spin electronics structures which work at room temperature conditions. This book appeals to researchers, graduate students and professionals engaged in the development of semiconductor spin electronics and computer devices, technologists and theoretical physicists. It is important for the calculation, development and creation of spin memory devices for a quantum computer.
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