Failure Analysis of Composite Materials with Manufacturing Defects, Ramesh Talreja
Автор: Addou Rafik, Colombo Luigi Название: Defects in Two-Dimensional Materials ISBN: 0128202920 ISBN-13(EAN): 9780128202920 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Defects in Two-Dimensional Materials addresses the fundamental physics and chemistry of defects in 2D materials and their effects on physical, electrical and optical properties. The book explores 2D materials such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMD). This knowledge will enable scientists and engineers to tune 2D materials properties to meet specific application requirements. The book reviews the techniques to characterize 2D material defects and compares the defects present in the various 2D materials (e.g. graphene, h-BN, TMDs, phosphorene, silicene, etc.).
As two-dimensional materials research and development is a fast-growing field that could lead to many industrial applications, the primary objective of this book is to review, discuss and present opportunities in controlling defects in these materials to improve device performance in general or use the defects in a controlled way for novel applications.
Автор: Heslehurst Название: Defects and Damage in Composite Materials and Structures ISBN: 1138073695 ISBN-13(EAN): 9781138073692 Издательство: Taylor&Francis Рейтинг: Цена: 13014.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
The advantages of composite materials include a high specific strength and stiffness, formability, and a comparative resistance to fatigue cracking and corrosion. However, not forsaking these advantages, composite materials are prone to a wide range of defects and damage that can significantly reduce the residual strength and stiffness of a structure or result in unfavorable load paths.
Emphasizing defect identification and restitution, Defects and Damage in Composite Materials and Structures explains how defects and damage in composite materials and structures impact composite component performance. Providing ready access to an extensive, descriptive list of defects and damage types, this must-have reference:
Examines defect criticality in composite structures
Recommends repair actions to restore structural integrity
Discusses failure modes and mechanisms of composites due to defects
Reviews NDI processes for finding and identifying defects in composite materials
Relating defect detection methods to defect type, the author merges his experience in the field of in-service activities for composite airframe maintenance and repair with indispensable reports and articles on defects and damage in advanced composite materials from the last 50 years.
Автор: Fang, Tsang-Tse Название: Elements of Structures and Defects of Crystalline Materials ISBN: 0128142685 ISBN-13(EAN): 9780128142684 Издательство: Elsevier Science Рейтинг: Цена: 23749.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Elements of Structures and Defects of Crystalline Materials has been written to cover not only the fundamental principles behind structures and defects, but also to provide deep insights into understanding the relationships of properties, defect chemistry and processing of the concerned materials. Part One deals with structures, while Part Two covers defects. Since the knowledge of the electron configuration of elements is necessary for understanding the nature of chemical bonding, it is discussed in the opening chapter. Chapter Two then describes the bonding formation within the crystal structures of varied materials, with Chapter Three delving into how a material's structure is formed.
In view of the importance of the effects of the structure distortion on the material properties due to the fields, the related topics have been included in section 3.4. Moreover, several materials still under intensive investigation have been illustrated to provide deep insights into understanding the effects of the relationships of processing, structures and defects on the material properties.
The defects of materials are explored in Part II. Chapter 4 deals with the point defects of metal and ceramics. Chapter 5 covers the fundamentals of the characteristics of dislocations, wherein physics and the atomic mechanics of several issues have been described in detail. In view of the significant influence of the morphologies including size, shape and distribution of grains, phases on the microstructure evolution, and, in turn, the properties of materials, the final chapter focuses on the fundamentals of interface energies, including single phase (grain) boundary and interphase boundary.
Discusses the relationship between properties, defect chemistry and the processing of materials
Presents coverage of the fundamental principles behind structures and defects
Includes information on two-dimensional and three-dimensional imperfections in solids
Автор: Tatyana Volk; Manfred W?hlecke Название: Lithium Niobate ISBN: 3642089666 ISBN-13(EAN): 9783642089664 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers new research on LiNbO3 including current studies on intrinsic and extrinsic point defects and the contribution of intrinsic defects to photoinduced charge transport. Applications of this material are also discussed.
Автор: David A. Drabold; Stefan Estreicher Название: Theory of Defects in Semiconductors ISBN: 3642070035 ISBN-13(EAN): 9783642070037 Издательство: Springer Рейтинг: Цена: 33401.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research.
Автор: D. Walgraef; N.M. Ghoniem Название: Patterns, Defects and Materials Instabilities ISBN: 9401067554 ISBN-13(EAN): 9789401067553 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Study Institute, Cargese, France, September 4-15, 1989
Автор: Pizzini, Sergio (university Of Milano-bicocca Milan Italy) Название: Point defects in group iv semiconductors ISBN: 1945291222 ISBN-13(EAN): 9781945291227 Издательство: Неизвестно Рейтинг: Цена: 17472.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory. While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap.
Описание: This volume presents the characterization methods involved with carbon nanotubes and carbon nanotube-based composites, with a more detailed look on computational mechanics approaches, namely the finite element method.
Автор: Chu Liu Название: Uncertainty Quantification of Stochastic Defects in Materials ISBN: 1032128739 ISBN-13(EAN): 9781032128733 Издательство: Taylor&Francis Рейтинг: Цена: 22202.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Pursuing a comprehensive numerical analytical system, the book establishes a fundamental framework for this topic, while emphasizing the importance of stochastic and uncertainty quantification analysis and the significant influence of microstructure defects in the material macro properties.
Описание: Includes coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT. This title covers review of the CdTe developments. It contains fundamental background of many topics.
Автор: Edmund G. Seebauer; Meredith C. Kratzer Название: Charged Semiconductor Defects ISBN: 1848820585 ISBN-13(EAN): 9781848820586 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
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