Описание: This book reports on various techniques for fault location on cross bonded cables, identifies the best method and describes the construction of a full fault locator system.
Автор: Edmund G. Seebauer; Meredith C. Kratzer Название: Charged Semiconductor Defects ISBN: 1849968209 ISBN-13(EAN): 9781849968201 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral Название: Point Defects in Semiconductors and Insulators ISBN: 3642627226 ISBN-13(EAN): 9783642627224 Издательство: Springer Рейтинг: Цена: 25155.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.
Автор: Lucia Romano Название: Defects in Semiconductors,91 ISBN: 0128019352 ISBN-13(EAN): 9780128019351 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.
The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.
Автор: Edmund G. Seebauer; Meredith C. Kratzer Название: Charged Semiconductor Defects ISBN: 1848820585 ISBN-13(EAN): 9781848820586 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.
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