Описание: This volume outlines how absorption spectroscopy is important to the investigation of deep-level centers introduced in semiconductors and insulators. It also explains how vibrational spectroscopy determines the atomic structure and symmetry of complexes.
Автор: G. Sih Название: Defects, Fracture and Fatigue ISBN: 940096823X ISBN-13(EAN): 9789400968233 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: J. Chikawa; K. Sumino; K. Wada Название: Defects and Properties of Semiconductors ISBN: 9401086168 ISBN-13(EAN): 9789401086165 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication.
Автор: Holt Название: Extended Defects in Semiconductors ISBN: 1107424143 ISBN-13(EAN): 9781107424142 Издательство: Cambridge Academ Рейтинг: Цена: 11405.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Описание: Proceedings of the NATO Advanced Research Workshop, Austin, Texas, USA, March 24-28, 1986
Автор: Gianfranco Pacchioni; Linards Skuja; David L. Gris Название: Defects in SiO2 and Related Dielectrics: Science and Technology ISBN: 0792366859 ISBN-13(EAN): 9780792366850 Издательство: Springer Рейтинг: Цена: 41787.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Автор: Fang, Tsang-Tse Название: Elements of Structures and Defects of Crystalline Materials ISBN: 0128142685 ISBN-13(EAN): 9780128142684 Издательство: Elsevier Science Рейтинг: Цена: 23749.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Elements of Structures and Defects of Crystalline Materials has been written to cover not only the fundamental principles behind structures and defects, but also to provide deep insights into understanding the relationships of properties, defect chemistry and processing of the concerned materials. Part One deals with structures, while Part Two covers defects. Since the knowledge of the electron configuration of elements is necessary for understanding the nature of chemical bonding, it is discussed in the opening chapter. Chapter Two then describes the bonding formation within the crystal structures of varied materials, with Chapter Three delving into how a material's structure is formed.
In view of the importance of the effects of the structure distortion on the material properties due to the fields, the related topics have been included in section 3.4. Moreover, several materials still under intensive investigation have been illustrated to provide deep insights into understanding the effects of the relationships of processing, structures and defects on the material properties.
The defects of materials are explored in Part II. Chapter 4 deals with the point defects of metal and ceramics. Chapter 5 covers the fundamentals of the characteristics of dislocations, wherein physics and the atomic mechanics of several issues have been described in detail. In view of the significant influence of the morphologies including size, shape and distribution of grains, phases on the microstructure evolution, and, in turn, the properties of materials, the final chapter focuses on the fundamentals of interface energies, including single phase (grain) boundary and interphase boundary.
Discusses the relationship between properties, defect chemistry and the processing of materials
Presents coverage of the fundamental principles behind structures and defects
Includes information on two-dimensional and three-dimensional imperfections in solids
Автор: Michael Steger Название: Transition-Metal Defects in Silicon ISBN: 3642438083 ISBN-13(EAN): 9783642438080 Издательство: Springer Рейтинг: Цена: 13059.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book demonstrates the power of isotopic enrichment for high-resolution spectroscopic characterization. It records properties of transition metal centers in silicon with unprecedented accuracy.
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