Compact Transistor Modelling for Circuit Design, Henk C. de Graaff; Francois M. Klaassen

Автор: Supriya Karmakar
Название: Novel Three-state Quantum Dot Gate Field Effect Transistor
ISBN: 8132234901 ISBN-13(EAN): 9788132234906
Издательство: Springer
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Цена: 14365.00 р.
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Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.

Автор: Bahl, Inder
Название: Fundamentals of rf and microwave transistor amplifiers
ISBN: 0470391669 ISBN-13(EAN): 9780470391662
Издательство: Wiley
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Цена: 25336.00 р.
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Описание: Includes extensive design information in the form of equations, tables, graphs and examples. Offers an in-depth study of amplifiers. Simple design equations are included to help understand design concepts. Practical and simple to understand examples with over 70 fully solved.

Автор: Wladyslaw Grabinski; Bart Nauwelaers; Dominique Sc
Название: Transistor Level Modeling for Analog/RF IC Design
ISBN: 9048171482 ISBN-13(EAN): 9789048171484
Издательство: Springer
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Цена: 15672.00 р.
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Описание: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.

Автор: Andrea Spanu
Название: Organic Transistor Devices for In Vitro Electrophysiological Applications
ISBN: 3319288792 ISBN-13(EAN): 9783319288796
Издательство: Springer
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Цена: 18284.00 р.
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Описание: This thesis reports on a novel system forextracellular recordings of the activity of excitable cells, which relies on anorganic, charge-modulated field-effect transistor (FET) called OCMFET.

Автор: Lining Zhang; Mansun Chan
Название: Tunneling Field Effect Transistor Technology
ISBN: 3319316516 ISBN-13(EAN): 9783319316512
Издательство: Springer
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Цена: 16070.00 р.
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Описание: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

Автор: Amara Amara; Olivier Rozeau
Название: Planar Double-Gate Transistor
ISBN: 9048181089 ISBN-13(EAN): 9789048181087
Издательство: Springer
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Цена: 21661.00 р.
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Описание: The aim of the editors here is to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary circuits. The goal is to point out how we can apply new transistor structures to come up with new cells and concepts.

Автор: Keng C. Wu
Название: Transistor Circuits for Spacecraft Power System
ISBN: 1461353858 ISBN-13(EAN): 9781461353850
Издательство: Springer
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Цена: 20962.00 р.
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Описание: As a stand-alone volume, Transistor Circuits For Spacecraft Power System presents numerous transistor circuits and building blocks associated with power electronics in general, and examines the major subsystem components for solar-based spacecraft power systems.

Автор: Prakash Gopalakrishnan; Rob A. Rutenbar
Название: Direct Transistor-Level Layout for Digital Blocks
ISBN: 1475779518 ISBN-13(EAN): 9781475779516
Издательство: Springer
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Цена: 13974.00 р.
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Описание: The approach described in this book can pack devices much more densely than a typical cell-based layout.Direct Transistor-Level Layout For Digital Blocks is a comprehensive reference work on device-level layout optimization, which will be valuable to CAD tool and circuit designers.