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Ion Implantation in Semiconductors and Other Materials, Billy Crowder


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Автор: Billy Crowder
Название:  Ion Implantation in Semiconductors and Other Materials
ISBN: 9781468420661
Издательство: Springer
Классификация:


ISBN-10: 1468420666
Обложка/Формат: Paperback
Страницы: 658
Вес: 1.05 кг.
Дата издания: 26.03.2012
Серия: The IBM Research Symposia Series
Язык: English
Размер: 244 x 170 x 34
Основная тема: Physics
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area.


Ion Implantation and Synthesis of Materials

Автор: Michael Nastasi; James W. Mayer
Название: Ion Implantation and Synthesis of Materials
ISBN: 3642062598 ISBN-13(EAN): 9783642062599
Издательство: Springer
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Цена: 16977.00 р.
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Описание: Ion implantation is one of the key processing steps in silicon integrated circuit technology. This book presents the physics and materials science of ion implantation and ion beam modification of materials.

Nitride Semiconductors: Handbook on Materials and Devices

Автор: Pierre Ruterana
Название: Nitride Semiconductors: Handbook on Materials and Devices
ISBN: 3527403876 ISBN-13(EAN): 9783527403875
Издательство: Wiley
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Цена: 26928.00 р.
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Описание: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currely the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components.
This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.

Ion Implantation in Semiconductors

Автор: Susumu Namba
Название: Ion Implantation in Semiconductors
ISBN: 1468421530 ISBN-13(EAN): 9781468421538
Издательство: Springer
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Цена: 6986.00 р.
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Описание: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974.

The Materials Science of Semiconductors

Автор: Angus Rockett
Название: The Materials Science of Semiconductors
ISBN: 1441938184 ISBN-13(EAN): 9781441938183
Издательство: Springer
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Цена: 11878.00 р.
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Описание: OBJECTIVES The primary purpose of this book is to convey insight into why semiconductors are the way they are, either because of how their atoms bond with one another, because of mistakes in their structure, or because of how they are produced or processed. The approach is to explore both the science of how atoms interact and to connect the results to real materials properties, and to show the engineering concepts that can be used to produce or improve a semiconductor by design. Along with this I hope to show some applications for the topics under discussion so that one may see how the concepts are applied in the laboratory. The intended audience of this book is senior undergraduate students and graduate students early in their careers or with limited background in the subject. I intend this book to be equally useful to those teaching in electrical engineering, materials science, or even chemical engineering or physics curricula, although the book is written for a materials science audience primarily. To try to maintain the focus on materials concepts the details of many of the derivations and equations are left out of the book. Likewise I have not delved into the details of electrical engineering topics in as much detail as an electrical engineer might wish. It is assumed that students are familiar with these topics from earlier courses.

Ion Implantation in Semiconductors 1976

Автор: Fred Chernow
Название: Ion Implantation in Semiconductors 1976
ISBN: 1461341981 ISBN-13(EAN): 9781461341987
Издательство: Springer
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Описание: The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976.

Ion Implantation Techniques

Автор: H. Ryssel; H. Glawischnig
Название: Ion Implantation Techniques
ISBN: 3642687814 ISBN-13(EAN): 9783642687815
Издательство: Springer
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Цена: 18284.00 р.
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Описание: In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech- niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech- niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan- tation conference for the first time. This implantation school concentra- ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con- trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap- ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec- tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.

Ion Implantation: Equipment and Techniques

Автор: H. Ryssel; H. Glawischnig
Название: Ion Implantation: Equipment and Techniques
ISBN: 3642691587 ISBN-13(EAN): 9783642691584
Издательство: Springer
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Описание: The Fourth International Conference on Ion Implantation: Equipment and Tech- niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica- tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe- cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.


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