Ion Implantation in Semiconductors 1976, Fred Chernow

Автор: Khler Anna
Название: Electronic Processes in Organic Semiconductors
ISBN: 3527332928 ISBN-13(EAN): 9783527332922
Издательство: Wiley
Рейтинг:
Цена: 10288.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The first advanced textbook to focus on the fundamentals in a brief, coherent and comprehensive way. Based on one of the author`s proven lecture course, it prepares students to understand the many multi-authored books available that discuss a particular aspect in more detail.

Автор: Claudia S. Schnohr; Mark C. Ridgway
Название: X-Ray Absorption Spectroscopy of Semiconductors
ISBN: 3662443619 ISBN-13(EAN): 9783662443613
Издательство: Springer
Рейтинг:
Цена: 18284.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.

Автор: Sitangshu Bhattacharya; Kamakhya Prasad Ghatak
Название: Effective Electron Mass in Low-Dimensional Semiconductors
ISBN: 3642438644 ISBN-13(EAN): 9783642438646
Издательство: Springer
Рейтинг:
Цена: 19589.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book examines the effective electron mass in nanodevices, explaining changes in band structure of optoelectronic semiconductors, and offering insight into electronic behavior in doped semiconductors and nanostructures. Includes 200 problems and questions.

Автор: Billy Crowder
Название: Ion Implantation in Semiconductors and Other Materials
ISBN: 1468420666 ISBN-13(EAN): 9781468420661
Издательство: Springer
Рейтинг:
Цена: 13974.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area.

Автор: Susumu Namba
Название: Ion Implantation in Semiconductors
ISBN: 1468421530 ISBN-13(EAN): 9781468421538
Издательство: Springer
Рейтинг:
Цена: 6986.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974.

Автор: B. Kutasov
Название: Thermoelectric Properties of Semiconductors
ISBN: 1489951024 ISBN-13(EAN): 9781489951021
Издательство: Springer
Рейтинг:
Цена: 6986.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Автор: Giorgio Benedek
Название: Point and Extended Defects in Semiconductors
ISBN: 146845711X ISBN-13(EAN): 9781468457117
Издательство: Springer
Рейтинг:
Цена: 6986.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The systematic study of defects in semiconductors began in the early fifties. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

Автор: Kong-Thon Tsen
Название: Ultrafast Dynamical Processes in Semiconductors
ISBN: 3642073034 ISBN-13(EAN): 9783642073038
Издательство: Springer
Рейтинг:
Цена: 32651.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: An international team of experts describes the optical and electronic properties of semiconductors and semiconductor nanostructures at picosecond and femtosecond time scales. The contributions are written in a tutorial way so that not only researchers in the field but also researchers and graduate students outside the field can benefit.

Автор: T. F. Connolly
Название: Semiconductors
ISBN: 1468462032 ISBN-13(EAN): 9781468462036
Издательство: Springer
Рейтинг:
Цена: 13060.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Автор: Marc A. Kastner; Stadford R. Ovshinsky; Gordon A.
Название: Disordered Semiconductors
ISBN: 1461290287 ISBN-13(EAN): 9781461290285
Издательство: Springer
Рейтинг:
Цена: 16979.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Twenty-four years ago, Hellmut Fritzsche came to our laboratory to evaluate our work in amorphous materials.

Автор: A. N. Frumkin
Название: Surface Properties of Semiconductors / Poverkhnostnye Svoistva Poluprovodnikov / ????????????? ???????? ???????????????
ISBN: 1489952799 ISBN-13(EAN): 9781489952790
Издательство: Springer
Рейтинг:
Цена: 6986.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Автор: Viktor S. Vavilov
Название: Effects of Radiation on Semiconductors
ISBN: 1489927220 ISBN-13(EAN): 9781489927224
Издательство: Springer
Рейтинг:
Цена: 13060.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The effects of electromagnetic radiation and high-energy par- ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza- tion, i. e., the generation of excess charge carriers); and(b) dis- turbance of the periodic structure of the crystal, i. e., the forma- tion of structural radiation defects. Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of radiation de- fects is part of the generalproblern of crystal lattice defects and the influence of such defects on the processes occurring in semi- conductors. The same is true of photoelectric and similar phe- nomena where the action of the radiation is only the start of a complex chain of nonequilibrium electronprocesses. Nevertheless, particularly from the point of view of the experimental physicist, the radiation effects discussed in the present book have inter- esting features: several types of radiation may produce the same resul t (for example, ionization by photons and by charged particles) or one type of radiation may produce several effects (ionization and radiation -defect formation). The aim of the author was to consider the most typical prob- lems. The subjects discussed differ widely from one another in the extent to which they have been investigated.