Описание: The research done in this field will help to widen the scope of semi- conductor applications by finding novel ways of employing surface effects in the construct ion of mi croe 1 ectroni c devi ces, semi conductor gas ana lysers, solar cells, etc.
Автор: Loucas G. Christophorou; James K. Olthoff Название: Gaseous Dielectrics VIII ISBN: 1461372216 ISBN-13(EAN): 9781461372219 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Gaseous Dielectrics VIII covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics.
Автор: Eric Garfunkel; Evgeni Gusev; Alexander Vul` Название: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ISBN: 0792350073 ISBN-13(EAN): 9780792350071 Издательство: Springer Рейтинг: Цена: 41787.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997
Автор: Loucas G. Christophorou; I. Sauers Название: Gaseous Dielectrics VI ISBN: 1461366488 ISBN-13(EAN): 9781461366485 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The Sixth International Symposium on Gaseous Dielectrics was held in Knoxville, Tennessee, U.S.A., on September 23-27, 1990. It is hoped that Gaseous Dielectrics VI will aid future research and development in and encourage wider industrial use of gaseous dielectrics.
Описание: This thesis investigates the dielectric properties of metal-oxide ceramics at microwave frequencies. It also demonstrates for the first time that a theory of harmonic phonon coupling can effectively predict the complex permittivity of metal oxides as a function of temperature and frequency. Dielectric ceramics are an important class of materials for radio-frequency, microwave and emergent terahertz technologies. Their key property is complex permittivity, the real part of which permits the miniaturisation of devices and the imaginary part of which is responsible for the absorption of electromagnetic energy. Absorption limits the practical performance of many microwave devices such as filters, oscillators, passive circuits and antennas. Complex permittivity as a function of temperature for low-loss dielectrics is determined by measuring the resonant frequency of dielectric resonators and using the radial mode matching technique to extract the dielectric properties.There have been only a handful of publications on the theory of dielectric loss, and their predictions have often been unfortunately unsatisfactory when compared to measurements of real crystals, sometimes differing by whole orders of magnitude. The main reason for this is the lack of accurate data for a harmonic coupling coefficient and phonon eigenfrequencies at arbitrary q vectors in the Brillouin zone. Here, a quantum field theory of losses in dielectrics is applied, using results from density functional perturbation theory, to predict from first principles the complex permittivity of metal oxides as functions of frequency and temperature.
Описание: This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets.
Автор: Poplavko, Yuriy Название: Functional Dielectrics For Electronics ISBN: 0128188359 ISBN-13(EAN): 9780128188354 Издательство: Elsevier Science Рейтинг: Цена: 21054.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Functional Dielectrics for Electronics: Fundamentals of Conversion Properties presents an overview of the nature of electrical polarization, dielectric nonlinearity, electrical charge transfer mechanisms, thermal properties, the nature of high permittivity, low-loss thermostability and other functional dielectrics. The book describes the intrinsic mechanisms of electrical polarization and the energy transformations in non-centrosymmetric crystals that are responsible for converting thermal, mechanical, optical and other impacts into electrical signals. In addition, the book reviews the main physical processes that provide electrical, mechanoelectrical, thermoelectrical and other conversion phenomena in polar crystals.
Detailed descriptions are given to electrical manifestations of polar-sensitivity in the crystals, the interaction of polarization with conductivity, the anomalies in thermal expansion coefficient and main peculiarities of heat transfer in polar-sensitive crystals.
Автор: Alexander A. Demkov; Alexandra Navrotsky Название: Materials Fundamentals of Gate Dielectrics ISBN: 9048167868 ISBN-13(EAN): 9789048167869 Издательство: Springer Рейтинг: Цена: 27251.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Loucas G. Christophorou; James K. Olthoff Название: Gaseous Dielectrics IX ISBN: 146135143X ISBN-13(EAN): 9781461351436 Издательство: Springer Рейтинг: Цена: 27950.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Gaseous Dielectrics IX covers recent advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics.
Автор: Loucas C. Christophorou; James K. Olthoff; Panayot Название: Gaseous Dielectrics X ISBN: 1461347459 ISBN-13(EAN): 9781461347453 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Eric Garfunkel; Evgeni Gusev; Alexander Vul` Название: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ISBN: 0792350081 ISBN-13(EAN): 9780792350088 Издательство: Springer Рейтинг: Цена: 29209.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Features an extrapolation of ULSI scaling trends and indicates that minimum feature sizes below 0.1 mu and gate thicknesses of. This book is intended for expert scientists and engineers who wish to keep up with research, and students who wish to learn more about the basic research issues relevant to device technology.
Автор: Loucas G. Christophorou; D.R. James Название: Gaseous Dielectrics VII ISBN: 1489912975 ISBN-13(EAN): 9781489912978 Издательство: Springer Рейтинг: Цена: 27950.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The Seventh International Symposium on Gaseous Dielectrics was held in Knoxville, Tennessee, U. It is hoped that Gaseous DielecIries VII will aid future research and development in, and encourage wider industrial use of, gaseous dielectrics. The Organizing Committee of the Seventh International Symposium on Gaseous Dielectrics consisted of G.
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