Описание: The book presents a unified and self-sufficient and reader-friendly introduction to the anisotropic elasticity theory necessary to model a wide range of point, line, planar and volume type crystal defects (e.g., vacancies, dislocations, interfaces, inhomogeneities and inclusions).
Описание: The book presents a unified and self-sufficient and reader-friendly introduction to the anisotropic elasticity theory necessary to model a wide range of point, line, planar and volume type crystal defects (e.g., vacancies, dislocations, interfaces, inhomogeneities and inclusions).
Описание: This interdisciplinary work on condensed matter physics, the continuum mechanics of novel materials, and partial differential equations, discusses the mathematical theory of elasticity and hydrodynamics of quasicrystals, as well as its applications. By establishing new partial differential equations of higher order and their solutions under complicated boundary value and initial value conditions, the theories developed here dramatically simplify the solution of complex elasticity problems. Comprehensive and detailed mathematical derivations guide readers through the work. By combining theoretical analysis and experimental data, mathematical studies and practical applications, readers will gain a systematic, comprehensive and in-depth understanding of condensed matter physics, new continuum mechanics and applied mathematics. This new edition covers the latest developments in quasicrystal studies. In particular, it pays special attention to the hydrodynamics, soft-matter quasicrystals, and the Poisson bracket method and its application in deriving hydrodynamic equations. These new sections make the book an even more useful and comprehensive reference guide for researchers working in Condensed Matter Physics, Chemistry and Materials Science.
Автор: J. Bourgoin Название: Point Defects in Semiconductors II ISBN: 364281834X ISBN-13(EAN): 9783642818349 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place.
Автор: Holt Название: Extended Defects in Semiconductors ISBN: 1107424143 ISBN-13(EAN): 9781107424142 Издательство: Cambridge Academ Рейтинг: Цена: 11405.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Автор: Kelly, A. Groves, G.w. Kidd, P. (queen Mary And We Название: Crystallography and crystal defects ISBN: 0471720445 ISBN-13(EAN): 9780471720447 Издательство: Wiley Рейтинг: Цена: 14256.00 р. Наличие на складе: Поставка под заказ.
Описание: The study of form and structure of crystals is multidisciplinary and therefore important in the study of physics, chemistry, molecular biology, materials science and mineralogy. This book combines aspects of crystallography, solid state physics and engineering.
Автор: B. Henderson Название: Defects and Their Structure in Nonmetallic Solids ISBN: 1468428047 ISBN-13(EAN): 9781468428049 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Thus major emphases in the pro- gramme concerned the use of spectroscopy and microscopy in revealing the structure of point defects and their aggregates, line defects as well as planar and volume defects.
Автор: B.K. Tanner Название: Characterization of Crystal Growth Defects by X-Ray Methods ISBN: 147571128X ISBN-13(EAN): 9781475711288 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods` held in the University of Durham, England from 29th August to 10th September 1979.
Автор: P. Gehlen Название: Interatomic Potentials and Simulation of Lattice Defects ISBN: 1468419943 ISBN-13(EAN): 9781468419948 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The remaining days were devoted to research papers on computer simulation of the four types of defects: point defects, line defects, surface defects, and volume defects.
Автор: Walter Bollmann Название: Crystal Defects and Crystalline Interfaces ISBN: 3642491758 ISBN-13(EAN): 9783642491757 Издательство: Springer Рейтинг: Цена: 13060.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Since many good books dealing with the general theory of crystal defects already exist, a new book has to be especially justified, and here its main justification lies in its treatment of crystal- line interfaces.
Автор: Oleg D. Lavrentovich; Paolo Pasini; Claudio Zannon Название: Defects in Liquid Crystals: Computer Simulations, Theory and Experiments ISBN: 140200169X ISBN-13(EAN): 9781402001697 Издательство: Springer Рейтинг: Цена: 25155.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Research Workshop on Computer Simulations of Defects in Liquid Crystals Including their Relation to Theory and Experiment, held in Erice, Sicily, Italy, 19-23 September 2000
Автор: Gunnar Borstel; Andris Krumins; Donats Millers Название: Defects and Surface-Induced Effects in Advanced Perovskites ISBN: 0792362179 ISBN-13(EAN): 9780792362173 Издательство: Springer Рейтинг: Цена: 20263.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Complex oxide materials, especially the ABO3-type perovskite materials, have been attracting growing scientific interest due to their unique electro-optical properties. This work presents 51 papers that report the developments and new results and can stimulate progress in high-tech technologies using perovskite materials.
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