Highly Integrated Gate Drivers for Si and GaN Power Transistors, Seidel Achim, Wicht Bernhard

Автор: Tobias Erlbacher
Название: Lateral Power Transistors in Integrated Circuits
ISBN: 3319345206 ISBN-13(EAN): 9783319345208
Издательство: Springer
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Цена: 14365.00 р.
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Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

Автор: Tobias Erlbacher
Название: Lateral Power Transistors in Integrated Circuits
ISBN: 3319004999 ISBN-13(EAN): 9783319004990
Издательство: Springer
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Цена: 19564.00 р.
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Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

Автор: Michael Reisch
Название: High-Frequency Bipolar Transistors
ISBN: 364263205X ISBN-13(EAN): 9783642632051
Издательство: Springer
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Цена: 28734.00 р.
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Описание: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today`s advanced compact models and their physical foundations.

Автор: Seidel Achim, Wicht Bernhard
Название: Highly Integrated Gate Drivers for Si and Gan Power Transistors
ISBN: 3030689395 ISBN-13(EAN): 9783030689391
Издательство: Springer
Цена: 11878.00 р.
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Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.

Автор: Ye Zhou
Название: Semiconducting Metal Oxide Thin-Film Transistors
ISBN: 0750325542 ISBN-13(EAN): 9780750325547
Издательство: INGRAM PUBLISHER SERVICES UK
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Цена: 25344.00 р.
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Описание: Patrick McGorry has transformed the lives of thousands of young people through early intervention and a holistic approach to mental health care. Here, he presents his plan for mental wealth for all Australians - he wants to ensure that all Australians have every chance for a fulfilling and mentally healthy life, crucially supported by stigma-free access to humane and effective mental health care.

Автор: Taur, Yuan,
Название: Fundamentals of modern VLSI devices /
ISBN: 1108480020 ISBN-13(EAN): 9781108480024
Издательство: Cambridge Academ
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Цена: 8554.00 р.
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Описание: A thoroughly updated third edition of an classic text, perfect for practical transistor design and in the classroom. It includes a variety of recent developments, reorganized chapters, and additional end-of-chapter homework exercises, making it ideal for senior undergraduate and graduate students taking advanced semiconductor devices courses.

Автор: Saha Samar K.
Название: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond
ISBN: 1482240661 ISBN-13(EAN): 9781482240665
Издательство: Taylor&Francis
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Цена: 31390.00 р.
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Описание: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models.

Автор: J.-P. Colinge
Название: FinFETs and Other Multi-Gate Transistors
ISBN: 1441944095 ISBN-13(EAN): 9781441944092
Издательство: Springer
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Цена: 20896.00 р.
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Описание: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits.

Автор: Vidor
Название: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics
ISBN: 3319725556 ISBN-13(EAN): 9783319725550
Издательство: Springer
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Цена: 13974.00 р.
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Описание:

Chapter 1.Introduction.- Chapter 2.Fundamentals.- Chapter 3.Integration.- Chapter 4. Zinc Oxide Transistors.- Chapter 5.Electronic Circuits.- Chapter 6.Improvements.- Chapter 7.Conclusion and Future Perspectives.

Автор: Jeroen A. Croon; Willy M Sansen; Herman E. Maes
Название: Matching Properties of Deep Sub-Micron MOS Transistors
ISBN: 1441937188 ISBN-13(EAN): 9781441937186
Издательство: Springer
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Цена: 19589.00 р.
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Описание: The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters.

Автор: Juras Pozela
Название: Physics of High-Speed Transistors
ISBN: 1489912444 ISBN-13(EAN): 9781489912442
Издательство: Springer
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Цена: 20962.00 р.
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Описание: This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec.