Автор: Michael Steger Название: Transition-Metal Defects in Silicon ISBN: 3642438083 ISBN-13(EAN): 9783642438080 Издательство: Springer Рейтинг: Цена: 13059.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book demonstrates the power of isotopic enrichment for high-resolution spectroscopic characterization. It records properties of transition metal centers in silicon with unprecedented accuracy.
Автор: Murakami, Yukitaka Название: Metal Fatigue ISBN: 0128138769 ISBN-13(EAN): 9780128138762 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Metal fatigue is an essential consideration for engineers and researchers looking at factors that cause metals to fail through stress, corrosion, or other processes. Predicting the influence of small defects and non-metallic inclusions on fatigue with any degree of accuracy is a particularly complex part of this.
Metal Fatigue: Effects of Small Defects and Nonmetallic Inclusions is the most trusted, detailed and comprehensive guide to this subject available. This expanded second edition introduces highly important emerging topics on metal fatigue, pointing the way for further research and innovation. The methodology is based on important and reliable results and may be usefully applied to other fatigue problems not directly treated in this book.
Demonstrates how to solve a wide range of specialized metal fatigue problems relating to small defects and non-metallic inclusions.
Provides a detailed introduction to fatigue mechanisms and stress concentration.
This edition is expanded to address even more topics, including low cycle fatigue, quality control of fatigue components, and more.
Автор: Kumar Parmod, Singh Jitendra Pal, Kumar Vinod Название: Ion Beam Induced Defects and Their Effects in Oxide Materials ISBN: 3030938611 ISBN-13(EAN): 9783030938611 Издательство: Springer Рейтинг: Цена: 6288.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides an overview of the applications of ion beam techniques in oxide materials. Oxide materials exhibit defect-induced physical properties relevant to applications in sensing, optoelectronics and spintronics. Defects in these oxide materials also lead to magnetism in non-magnetic materials or to a change of magnetic ordering in magnetic materials. Thus, an understanding of defects is of immense importance. To date, ion beam tools are considered the most effective techniques for producing controlled defects in these oxides. This book will detail the ion beam tools utilized for creating defects in oxides.
Автор: Steger, Michael Название: Transition-metal defects in silicon ISBN: 364235078X ISBN-13(EAN): 9783642350788 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book demonstrates the power of isotopic enrichment for high-resolution spectroscopic characterization. It records properties of transition metal centers in silicon with unprecedented accuracy.
Автор: Jacques Jupille; Geoff Thornton Название: Defects at Oxide Surfaces ISBN: 3319380192 ISBN-13(EAN): 9783319380193 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides.
Автор: J. Chikawa; K. Sumino; K. Wada Название: Defects and Properties of Semiconductors ISBN: 9401086168 ISBN-13(EAN): 9789401086165 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication.
Автор: Addou Rafik, Colombo Luigi Название: Defects in Two-Dimensional Materials ISBN: 0128202920 ISBN-13(EAN): 9780128202920 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Defects in Two-Dimensional Materials addresses the fundamental physics and chemistry of defects in 2D materials and their effects on physical, electrical and optical properties. The book explores 2D materials such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMD). This knowledge will enable scientists and engineers to tune 2D materials properties to meet specific application requirements. The book reviews the techniques to characterize 2D material defects and compares the defects present in the various 2D materials (e.g. graphene, h-BN, TMDs, phosphorene, silicene, etc.).
As two-dimensional materials research and development is a fast-growing field that could lead to many industrial applications, the primary objective of this book is to review, discuss and present opportunities in controlling defects in these materials to improve device performance in general or use the defects in a controlled way for novel applications.
Описание: A monograph that deals with two very topical II-VI semiconductor compounds, CdTe and CdZnTe, covering their modern and fundamental aspects. It features coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT as well as review of the CdTe developments.
Описание: Proceedings of the NATO Advanced Research Workshop, Austin, Texas, USA, March 24-28, 1986
Автор: Tatyana Volk; Manfred W?hlecke Название: Lithium Niobate ISBN: 3642089666 ISBN-13(EAN): 9783642089664 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers new research on LiNbO3 including current studies on intrinsic and extrinsic point defects and the contribution of intrinsic defects to photoinduced charge transport. Applications of this material are also discussed.
Автор: G. Herrmann Название: Modeling of Defects and Fracture Mechanics ISBN: 3211824871 ISBN-13(EAN): 9783211824870 Издательство: Springer Рейтинг: Цена: 13060.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: All materials contain numerous defects, such as microcracks, microvoids, inhomogeneities, dislocations, etc., which precede possible fracture. This volume contains some introductory material, aspects of fracture mechanics, the theory of crystal defects, computational micromechanics, and the heterogenization methodology.
Автор: Gott James A. Название: Defects in Self-Catalysed III-V Nanowires ISBN: 3030940616 ISBN-13(EAN): 9783030940614 Издательство: Springer Рейтинг: Цена: 22359.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.
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