Introduction to Scanning Transmission Electron Microscopy, Keyse, Dr Robert
Автор: Chen, C. Julian (adjunct Senior Research Scientist And Adjunct Professor, Adjunct Senior Research Scientist And Adjunct Professor, Department Of Appli Название: Introduction to scanning tunneling microscopy third edition ISBN: 0198856555 ISBN-13(EAN): 9780198856559 Издательство: Oxford Academ Рейтинг: Цена: 15682.00 р. Наличие на складе: Поставка под заказ.
Описание: This third edition is a thoroughly updated and improved version of the recognized "Bible" of the field.
Автор: Kenichi Shimizu; Tomoaki Mitani Название: New Horizons of Applied Scanning Electron Microscopy ISBN: 364226168X ISBN-13(EAN): 9783642261688 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: In modern scanning electron microscopy, sample surface preparation is of key importance. This book presents the procedures for sample surface preparation, thereby facilitating unprecedented capabilities with advanced scanning electron microscopes.
Автор: Kenichi Shimizu; Tomoaki Mitani Название: New Horizons of Applied Scanning Electron Microscopy ISBN: 3642031595 ISBN-13(EAN): 9783642031595 Издательство: Springer Рейтинг: Цена: 19591.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: In modern scanning electron microscopy, sample surface preparation is of key importance. This book presents the procedures for sample surface preparation, thereby facilitating unprecedented capabilities with advanced scanning electron microscopes.
Автор: Bonnell Dawn A Название: Scanning Probe Microscopy for Energy Research ISBN: 9814434701 ISBN-13(EAN): 9789814434706 Издательство: World Scientific Publishing Рейтинг: Цена: 31680.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Efficiency and life time of solar cells, energy and power density of the batteries, and costs of the fuel cells alike cannot be improved unless the complex electronic, optoelectronic, and ionic mechanisms underpinning operation of these materials and devices are understood on the nanometer level of individual defects. Only by probing these phenomena locally can we hope to link materials structure and functionality, thus opening pathway for predictive modeling and synthesis. While structures of these materials are now accessible on length scales from macroscopic to atomic, their functionality has remained Terra Incognitae. In this volume, we provide a summary of recent advances in scanning probe microscopy studies of local functionality of energy materials and devices ranging from photovoltaics to batteries, fuel cells, and energy harvesting systems. Recently emergent SPM modes and combined SPM-electron microscopy approaches are also discussed. Contributions by internationally renowned leaders in the field describe the frontiers in this important field.
Описание: The analytical system depends on collecting the x-ray photons that are generated within the sample as a consequence of interaction with the same high energy beam of primary electrons used to produce images.
Описание: * Offers a simple starting point to VPSEM, especially for new users, technicians and students containing clear, concise explanations * Crucially, the principles and applications outlined in this book are completely generic: i.e. applicable to all types of VPSEM, irrespective of manufacturer.
Автор: Page Lisa Название: Scanning Electron Microscopy ISBN: 163238406X ISBN-13(EAN): 9781632384065 Издательство: Неизвестно Цена: 22990.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Fine focused electron and ion beams constitute(s) an inevitable part of methods and instruments employed in various science fields. SEMs are well instrumented and supplemented with advanced techniques and methods and thereby present endless possibilities in the areas of quantitative measurement of object topologies, surface imaging, performing elemental analysis and local electrophysical characteristics of semiconductor structures. Creation of micro and nanostructures involves extensive use of fine focused e-beam. This book focuses on various issues concerned with scanning electron microscopy, covering both theoretical and practical aspects. Numerous topics are organized under two sections, "Material Science" and "Nanostructured Materials for Electronic Industry". This book includes contributions by renowned researchers and experts in this field.
Автор: Pratibha L. Gai Название: In-Situ Microscopy in Materials Research ISBN: 0792399897 ISBN-13(EAN): 9780792399896 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Название: Encyclopedia of Scanning Electron Microscopy ISBN: 1632381664 ISBN-13(EAN): 9781632381668 Издательство: Неизвестно Цена: 23335.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book focuses on various issues concerned with scanning electron microscopy, as well as its theoretical and practical applications. Fine focused electron and ion beams constitute(s) an inevitable part of methods and instruments employed in various science fields. SEMs are well instrumented and supplemented with advanced techniques and methods and thereby present endless possibilities in the areas of quantitative measurement of object topologies, surface imaging, performing elemental analysis and local electrophysical characteristics of semiconductor structures. Creation of micro and nanostructures involves extensive use of fine focused e-beam. Numerous topics are covered under two sections Instrumentation, Methodology and Biology, Medicine for electronic industry. This book includes contributions by renowned researchers and experts in this field.
This book deals with the subject of secondary energy spectroscopy in the scanning electron microscope (SEM). The SEM is a widely used research instrument for scientific and engineering research and its low energy scattered electrons, known as secondary electrons, are used mainly for the purpose of nanoscale topographic imaging. This book demonstrates the advantages of carrying out precision electron energy spectroscopy of its secondary electrons, in addition to them being used for imaging. The book will demonstrate how secondary electron energy spectroscopy can transform the SEM into a powerful analytical tool that can map valuable material science information to the nanoscale, superimposing it onto the instrument's normal topographic mode imaging. The book demonstrates how the SEM can then be used to quantify/identify materials, acquire bulk density of states information, capture dopant density distributions in semiconductor specimens, and map surface charge distributions.
Автор: Zhong Lin Wang, Weilie Zhou Название: Scanning microscopy for nanotechnology ISBN: 0387333258 ISBN-13(EAN): 9780387333250 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Scanning electron microscopy (SEM) can be exploited not only for nanomaterials characterization but also integrated with new technologies for in-situ nanomaterials engineering and manipulation. Scanning Microscopy for Nanotechnology addresses the rapid development of these techniques for nanotechnology, in both technique and application chapters by leading practitioners. The book covers topics including nanomaterials imaging, X-ray microanalysis, high-resolution SEM, low kV SEM, cryo-SEM, as well as new techniques such as electron back scatter diffraction (EBSD) and scanning transmission electron microscopy (STEM). Fabrication techniques integrated with SEM, such as e-beam nanolithography, nanomanipulation, and focused ion beam nanofabrication, are major new dimensions for SEM application. Application areas include the study of nanoparticles, nanowires and nanotubes, three-dimensional nanostructures, quantum dots, magnetic nanomaterials, photonic structures, and bio-inspired nanomaterials. This book will appeal not only to a broad spectrum of nanomaterials researchers, but also to SEM development specialists.
Описание: Contains the proceedings of the third Atomic Force Microscopy/Scanning Tunneling Microscopy symposium, which was held to provide an interface between scientists, engineers, representatives of industry, government, and academia, all of whom have a common interest in probe microscopies.
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