Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.
Автор: Coffer, J.L. Название: Semiconducting Silicon Nanowires For Biomedical Applications ISBN: 0128213515 ISBN-13(EAN): 9780128213513 Издательство: Elsevier Science Рейтинг: Цена: 31160.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
In its second, extensively revised second edition, Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and biomedical applications of this key material.
The book begins by reviewing the basics of growth, characterization, biocompatibility, and surface modification of semiconducting silicon nanowires. Attention then turns to use of these structures for tissue engineering and delivery applications, followed by detection and sensing. Reflecting the evolution of this multidisciplinary subject, several new key topics are highlighted, including our understanding of the cell-nanowire interface, latest advances in associated morphologies (including silicon nanoneedles and nanotubes for therapeutic delivery), and significantly, the status of silicon nanowire commercialization in biotechnology.
Semiconducting Silicon Nanowires for Biomedical Applications is a comprehensive resource for biomaterials scientists who are focused on biosensors, drug delivery, and the next generation of nano-biotech platforms that require a detailed understanding of the cell-nanowire interface, along with researchers and developers in industry and academia who are concerned with nanoscale biomaterials, in particular electronically-responsive structures.
Автор: Francis Leonard Deepak; Alvaro Mayoral; Raul Arena Название: Advanced Transmission Electron Microscopy ISBN: 3319151762 ISBN-13(EAN): 9783319151762 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book highlights the current understanding of materials in the context of new and continuously emerging techniques in the field of electron microscopy. The authors present applications of electron microscopic techniques in characterizing various well-known & new nanomaterials.
Автор: Paul N. Butcher; Norman H. March; Mario P. Tosi Название: Crystalline Semiconducting Materials and Devices ISBN: 0306421542 ISBN-13(EAN): 9780306421549 Издательство: Springer Рейтинг: Цена: 32652.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The Semiconducting Bond . Construction of the Localized X by Linear Combination of n Atomic Orbitals . The Aufbau-Principle of the Crystal Structure of Semiconductors . A Building Principle for Polyanionic Structures . Chemical Bonds and Semiconductivity in Transition-Element Compounds . Electronic Band Structure .
Автор: Paul N. Butcher; Norman H. March; Mario P. Tosi Название: Crystalline Semiconducting Materials and Devices ISBN: 1475799020 ISBN-13(EAN): 9781475799026 Издательство: Springer Рейтинг: Цена: 27950.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The Semiconducting Bond . Construction of the Localized X by Linear Combination of n Atomic Orbitals . The Aufbau-Principle of the Crystal Structure of Semiconductors . A Building Principle for Polyanionic Structures . Chemical Bonds and Semiconductivity in Transition-Element Compounds . Electronic Band Structure .
Автор: Victor E. Borisenko Название: Semiconducting Silicides ISBN: 3642640699 ISBN-13(EAN): 9783642640698 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A comprehensive presentation and analysis of properties and methods of formation of semiconducting silicides. Fundamental electronic, optical and transport properties of the silicides collected from recent publications will help readers choose their application in new generations of solid-state devices.
Описание: One of the first books to cover advanced silicon-based technologies, this volume presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications.
Автор: M. Neuberger Название: III-V Ternary Semiconducting Compounds-Data Tables ISBN: 1468461672 ISBN-13(EAN): 9781468461671 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The Electronic Prope ties Information Cente has developed the Data Table as a compilation of the most eliable info mation available fo the physical, c ystallog aphic, mechanical, thermal, elect onic, magnetic and optical p ope ties of a given mate ial. Data Tables forme ly se ved as an int oduction to the g aphic data compilations on the mate ial published by the Elect onic ope ties Information Cente, EPIC, as Data Sheets. Although the Data Sheets we e p incipally concerned, according to the scope of the Cente, with electronic and optical data, it is believed that data cove ing the complete p ope ty spect um, is of the f st impo tance to eve y scientist and engineer, whateve his information requi ements. The enthusiastic eception of these Data Tables has confi med this opinion and increasing requests fo this highly selective type of information esulted in the publication of volume 2 in this se ies, "III-V Semiconducting Compounds" in 1971 and "G oup IV Semiconducting Compounds", also in 1971. Recent inte est in the device applications of the te n y semiconducto s, led to the compilation of these Data Tables on the III-V Te n y Semiconducting Compounds. The majo problem in this type of selective data compilation on a semiconducting mate ial, lies in the mate ial specifications. Prope ties may va y so widely with doping, c stallinity, defects, geometric forms and the othe pa amete s of p epa ation, that any attempts at comparison normally fail. On this basis, we have consistently attempted to give the p epa ation methods, ca rier concent ations, and physical form.
Автор: Hiroyasu Saka Название: Practical Electron Microscopy Of Lattice Defects ISBN: 9811234698 ISBN-13(EAN): 9789811234699 Издательство: World Scientific Publishing Рейтинг: Цена: 15840.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: 'Although the study of such defects is regularly examined at length in more general books on electron microscopy, this text in which they are centre-stage will surely be appreciated.' [Read Full Review]
Ultramicroscopy
This unique reference text provides those who are studying crystal lattice defects using a transmission electron microscope (TEM) with a basic knowledge of transmission electron microscopy. As it has been written for beginners, the principles of both transmission electron microscopy and crystallography have been clearly and simply explained, with the use of many figures and photographs to aid understanding. Mathematics is avoided where possible, and problems and exercises are amply provided.
This thesis focuses on the energy band engineering of graphene. It presents pioneering findings on the controlled growth of graphene and graphene-based heterostructures, as well as scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS) studies on their electronic structures. The thesis primarily investigates two classes of graphene-based systems: (i) twisted bilayer graphene, which was synthesized on Rh substrates and manifests van Hove singularities near Fermi Level, and (ii) in-plane h-BN-G heterostructures, which were controllably synthesized in an ultrahigh vacuum chamber and demonstrate intriguing electronic properties on the interface. In short, the thesis offers revealing insights into the energy band engineering of graphene-based nanomaterials, which will greatly facilitate future graphene applications.
