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GaN Transistors for Efficient Power Conversion, Alex Lidow, Michael de Rooij, Johan Strydom, David


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Автор: Alex Lidow, Michael de Rooij, Johan Strydom, David
Название:  GaN Transistors for Efficient Power Conversion
ISBN: 9781119594147
Издательство: Wiley
Классификация:
ISBN-10: 1119594146
Обложка/Формат: Hardback
Страницы: 384
Вес: 0.90 кг.
Дата издания: 04.10.2019
Серия: Engineering
Язык: English
Издание: 3rd edition
Размер: 232 x 273 x 18
Читательская аудитория: Professional & vocational
Ключевые слова: Electronics & communications engineering
Основная тема: Electronics & communications engineering
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Англии
Описание:

An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design

This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices.

GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout.

  • Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications
  • Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar
  • Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors
  • A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art

GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.




      Новое издание
Gan power devices for efficient power conversion

Автор: Lidow, Alex (efficient Power Conversion Corporatio
Название: Gan power devices for efficient power conversion
ISBN: 1394286953 ISBN-13(EAN): 9781394286959
Издательство: Wiley
Цена: 17107.00 р.
Наличие на складе: Есть у поставщикаПоставка под заказ.

      Старое издание

Sensitivity Analysis of Algan/Gan High Electron Mobility Transistors to Process Variation

Автор: Liddle Adam J.
Название: Sensitivity Analysis of Algan/Gan High Electron Mobility Transistors to Process Variation
ISBN: 1249834252 ISBN-13(EAN): 9781249834250
Издательство: Неизвестно
Рейтинг:
Цена: 10658.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors

Автор: Uhlman Troy A.
Название: Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors
ISBN: 1249836565 ISBN-13(EAN): 9781249836568
Издательство: Неизвестно
Рейтинг:
Цена: 10658.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Investigation of Gate Current in Neutron Irradiated Alxga1-Xn/Gan Heterogeneous Field Effect Transistors Using Voltage and Temperature Dependence

Автор: Gray Thomas E.
Название: Investigation of Gate Current in Neutron Irradiated Alxga1-Xn/Gan Heterogeneous Field Effect Transistors Using Voltage and Temperature Dependence
ISBN: 1288308345 ISBN-13(EAN): 9781288308347
Издательство: Неизвестно
Рейтинг:
Цена: 10658.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors

Автор: Sattler James M.
Название: An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
ISBN: 1286861640 ISBN-13(EAN): 9781286861646
Издательство: Неизвестно
Рейтинг:
Цена: 10658.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics

Автор: Vidor
Название: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics
ISBN: 3319725556 ISBN-13(EAN): 9783319725550
Издательство: Springer
Рейтинг:
Цена: 13974.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание:

Chapter 1.Introduction.- Chapter 2.Fundamentals.- Chapter 3.Integration.- Chapter 4. Zinc Oxide Transistors.- Chapter 5.Electronic Circuits.- Chapter 6.Improvements.- Chapter 7.Conclusion and Future Perspectives.

Lateral Power Transistors in Integrated Circuits

Автор: Tobias Erlbacher
Название: Lateral Power Transistors in Integrated Circuits
ISBN: 3319345206 ISBN-13(EAN): 9783319345208
Издательство: Springer
Рейтинг:
Цена: 14365.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

Lateral Power Transistors in Integrated Circuits

Автор: Tobias Erlbacher
Название: Lateral Power Transistors in Integrated Circuits
ISBN: 3319004999 ISBN-13(EAN): 9783319004990
Издательство: Springer
Рейтинг:
Цена: 19564.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

Electricity Generation Using Wind Power (Second Edition)

Автор: Shepherd William Et Al
Название: Electricity Generation Using Wind Power (Second Edition)
ISBN: 9813148659 ISBN-13(EAN): 9789813148659
Издательство: World Scientific Publishing
Рейтинг:
Цена: 15048.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание:

Is wind power the answer to our energy supply problems? Is there enough wind for everyone? Is offshore generation better than onshore generation? Can a roof-mounted wind turbine generate enough electricity to supply a typical domestic household?

Electricity Generation Using Wind Power (2nd Edition) answers these pressing questions through its detailed coverage of the different types of electrical generator machines used, as well as the power electronic converter technologies and control principles employed. Also covered is the integration of wind farms into established electricity grid systems, plus environmental and economic aspects of wind generation.

Written for technically minded readers, especially electrical engineers concerned with the possible use of wind power for generating electricity, it incorporates some global meteorological and geographical features of wind supply plus a survey of past and present wind turbines. Included is a technical assessment of the choice of turbine sites. The principles and analysis of wind power conversion, transmission and efficiency evaluation are described.

This book includes worked numerical examples in some chapters, plus end of chapter problems and review questions, with answers. As a textbook it is pitched at the level of final year undergraduate engineering study but may also be useful as a textbook or reference for wider technical studies.

Advanced Simulation  Methods For Gallium Nitride Electronic Devices: An accurate analysis of  state-of-the-art high-frequency and high-power Gallium Nitride High   Electron Mobility Transistors

Автор: Fabio Alessio Marino
Название: Advanced Simulation Methods For Gallium Nitride Electronic Devices: An accurate analysis of state-of-the-art high-frequency and high-power Gallium Nitride High Electron Mobility Transistors
ISBN: 363931929X ISBN-13(EAN): 9783639319293
Издательство: LAP LAMBERT Academic Publishing
Рейтинг:
Цена: 4575.00 р.
Наличие на складе: Нет в наличии.

Organic Field Effect Transistors

Автор: Ioannis Kymissis
Название: Organic Field Effect Transistors
ISBN: 1441947116 ISBN-13(EAN): 9781441947116
Издательство: Springer
Рейтинг:
Цена: 15672.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: As a basic introduction to the subject for practitioners, this text will also be of interest to researchers looking for references that are not part of their subject area, focusing on materials and techniques useful for making integrated circuits.

Semiconductors and Transistors

Автор: Warschauer Douglas M.
Название: Semiconductors and Transistors
ISBN: 1258350661 ISBN-13(EAN): 9781258350666
Издательство: Неизвестно
Цена: 6060.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Physics of High-Speed Transistors

Автор: Juras Pozela
Название: Physics of High-Speed Transistors
ISBN: 1489912444 ISBN-13(EAN): 9781489912442
Издательство: Springer
Рейтинг:
Цена: 20962.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec.


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