Gan power devices for efficient power conversion, Lidow, Alex (efficient Power Conversion Corporatio
Старое издание
Автор: Alex Lidow, Michael de Rooij, Johan Strydom, David Название: GaN Transistors for Efficient Power Conversion ISBN: 1119594146 ISBN-13(EAN): 9781119594147 Издательство: Wiley Цена: 15515.00 р. Наличие на складе: Невозможна поставка. Описание:
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design
This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices.
GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout.
Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications
Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar
Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors
A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art
GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Автор: Baliga Название: Fundamentals of Power Semiconductor Devices ISBN: 3319939874 ISBN-13(EAN): 9783319939872 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Поставка под заказ.
Описание: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
Описание: Written by a leading author on the subject, PID and Predictive Control of Electric Drives and Power Supplies using MATLAB / Simulink provides a timely introduction to current research on PID and predictive control.
Автор: Seidel Achim, Wicht Bernhard Название: Highly Integrated Gate Drivers for Si and Gan Power Transistors ISBN: 3030689395 ISBN-13(EAN): 9783030689391 Издательство: Springer Цена: 11878.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
Автор: Fay Patrick, Jena Debdeep, Maki Paul Название: High-Frequency Gan Electronic Devices ISBN: 3030202100 ISBN-13(EAN): 9783030202101 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Chapter 1. Introduction.- Chapter 2.High Power High Frequency Transistors: A Materials Perspective.- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds.- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors.- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA).- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications.- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices.- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures.- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes.- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.
Автор: Di Paolo Emilio Название: GaN and SiC Power Devices ISBN: 3031506537 ISBN-13(EAN): 9783031506536 Издательство: Springer Рейтинг: Цена: 11179.00 р. Наличие на складе: Поставка под заказ.
Описание: This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors, manufacturing, characterization, market and design for key applications.
Автор: Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zan Название: Power GaN Devices ISBN: 3319827561 ISBN-13(EAN): 9783319827568 Издательство: Springer Рейтинг: Цена: 23757.00 р. Наличие на складе: Поставка под заказ.
Описание: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field.
Описание: This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. * Describes in detail a new industry standard for GaN-based power and RF circuit design; * Includes discussion of practical problems and their solutions in GaN device modeling; * Covers both radio-frequency (RF) and power electronics application of GaN technology; * Describes modeling of both GaN RF and power devices.
Автор: Chauhan,Yogesh Singh Название: Gan Transistor Modeling For Rf And Power Electronics ISBN: 0323998712 ISBN-13(EAN): 9780323998710 Издательство: Elsevier Science Рейтинг: Цена: 27791.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Seidel Achim, Wicht Bernhard Название: Highly Integrated Gate Drivers for Si and GaN Power Transistors ISBN: 3030689425 ISBN-13(EAN): 9783030689421 Издательство: Springer Рейтинг: Цена: 11878.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
Автор: Khandelwal Название: Advanced SPICE Model for GaN HEMTs (ASM-HEMT) ISBN: 3030777324 ISBN-13(EAN): 9783030777326 Издательство: Springer Рейтинг: Цена: 11878.00 р. Наличие на складе: Поставка под заказ.
Описание: This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. * Describes in detail a new industry standard for GaN-based power and RF circuit design; * Includes discussion of practical problems and their solutions in GaN device modeling; * Covers both radio-frequency (RF) and power electronics application of GaN technology; * Describes modeling of both GaN RF and power devices.
Описание: THE SERIES: ADVANCES IN SYSTEMS, SIGNALS AND DEVICES Systems, Signals & Devices is one of the large specializations in electrical engineering, mechanical engineering and computer sciences. It derives input from physics, mathematics and is an indispensable feature of all natural- and life sciences in research and in application. The new series “Advances in Systems, Signals and Devices” presents original publications mainly from speakers on the International Multi-Conference on Systems, Signal and Devices but also from other international authors. The Conference is a forum for researchers and specialists in different fi elds covering all types of sensors and measurement systems.
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