Описание: Written by a leading author on the subject, PID and Predictive Control of Electric Drives and Power Supplies using MATLAB / Simulink provides a timely introduction to current research on PID and predictive control.
Автор: Chong Leong, Gan, Chen-Yu, Huang Название: Interconnect Reliability in Advanced Memory Device Packaging ISBN: 3031267079 ISBN-13(EAN): 9783031267079 Издательство: Springer Рейтинг: Цена: 27950.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explains mechanical and thermal reliability for modern memory packaging, considering materials, processes, and manufacturing. In the past 40 years, memory packaging processes have evolved enormously. This book discusses the reliability and technical challenges of first-level interconnect materials, packaging processes, advanced specialty reliability testing, and characterization of interconnects. It also examines the reliability of wire bonding, lead-free solder joints such as reliability testing and data analyses, design for reliability in hybrid packaging and HBM packaging, and failure analyses. The specialty of this book is that the materials covered are not only for second-level interconnects, but also for packaging assembly on first-level interconnects and for the semiconductor back-end on 2.5D and 3D memory interconnects. This book can be used as a text for college and graduate students who have the potential to become our future leaders, scientists, and engineers in the electronics and semiconductor industry.
Автор: Junjie Gu; Zhongxue Gan Название: Entransy in Phase-Change Systems ISBN: 331907427X ISBN-13(EAN): 9783319074276 Издательство: Springer Рейтинг: Цена: 9141.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Entransy in Phase-Change Systems summarizes recent developments in the area of entransy, especially on phase-change processes. This book covers new developments in the area including the great potential for energy saving for process industries, decreasing carbon dioxide emissions, reducing energy bills and improving overall efficiency of systems.
Автор: Kaufmann Название: Monolithic Integration in E-Mode GaN Technology ISBN: 3031156277 ISBN-13(EAN): 9783031156274 Издательство: Springer Рейтинг: Цена: 8384.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book is a comprehensive, all-in-one source on design of monolithic GaN power ICs. It is written in handbook style with systematic guidelines and includes implementation examples. It covers the full range from technology fundamentals to implementation details including design techniques specific for GaN technology. It provides a detailed loss analysis based on comparative measurements between silicon and GaN based converters to provide an understanding of the relations between design choices and results which can be transferred to other power converter systems.
Автор: Seidel Achim, Wicht Bernhard Название: Highly Integrated Gate Drivers for Si and GaN Power Transistors ISBN: 3030689425 ISBN-13(EAN): 9783030689421 Издательство: Springer Рейтинг: Цена: 11878.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
Автор: Gargiulo Gaetano D., Naik Ganesh R. Название: Wearable/Personal Monitoring Devices Present to Future ISBN: 9811653232 ISBN-13(EAN): 9789811653230 Издательство: Springer Рейтинг: Цена: 23757.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses recent advances in wearable technologies and personal monitoring devices, covering topics such as skin contact-based wearables (electrodes), non-contact wearables, the Internet of things (IoT), and signal processing for wearable devices. Although it chiefly focuses on wearable devices and provides comprehensive descriptions of all the core principles of personal monitoring devices, the book also features a section on devices that are embedded in smart appliances/furniture, e.g. chairs, which, despite their limitations, have taken the concept of unobtrusiveness to the next level. Wearable and personal devices are the key to precision medicine, and the medical community is finally exploring the opportunities offered by long-term monitoring of physiological parameters that are collected during day-to-day life without the bias imposed by the clinical environment. Such data offers a prime view of individuals’ physical condition, as well as the efficacy of therapy and occurrence of events. Offering an in-depth analysis of the latest advances in smart and pervasive wearable devices, particularly those that are unobtrusive and invisible, and addressing topics not covered elsewhere, the book will appeal to medical practitioners and engineers alike.
Название: Handbook Of Gan Semiconductor Mater ISBN: 1498747132 ISBN-13(EAN): 9781498747134 Издательство: Taylor&Francis Рейтинг: Цена: 41342.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It covers the basics of semiconductor materials, physics, growth and characterization techniques.
Автор: Fay Patrick, Jena Debdeep, Maki Paul Название: High-Frequency Gan Electronic Devices ISBN: 3030202100 ISBN-13(EAN): 9783030202101 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Chapter 1. Introduction.- Chapter 2.High Power High Frequency Transistors: A Materials Perspective.- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds.- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors.- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA).- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications.- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices.- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures.- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes.- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.
Автор: Seidel Achim, Wicht Bernhard Название: Highly Integrated Gate Drivers for Si and Gan Power Transistors ISBN: 3030689395 ISBN-13(EAN): 9783030689391 Издательство: Springer Цена: 11878.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
Автор: Gan Woon Siong Название: Gauge Invariance Approach to Acoustic Fields ISBN: 9811387532 ISBN-13(EAN): 9789811387531 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book highlights the symmetry properties of acoustic fields and describes the gauge invariance approach, which can be used to reveal those properties. This is followed by descriptions of global gauge invariance (isotropy), and of local gauge invariance (anisotropy).
Автор: Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zan Название: Power GaN Devices ISBN: 3319827561 ISBN-13(EAN): 9783319827568 Издательство: Springer Рейтинг: Цена: 23757.00 р. Наличие на складе: Поставка под заказ.
Описание: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field.
Автор: Zhe Chuan Feng Название: SiC Power Materials ISBN: 3642058450 ISBN-13(EAN): 9783642058455 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
