Monolithic Integration in E-Mode GaN Technology, Kaufmann
Автор: Chong Leong, Gan, Chen-Yu, Huang Название: Interconnect Reliability in Advanced Memory Device Packaging ISBN: 3031267079 ISBN-13(EAN): 9783031267079 Издательство: Springer Рейтинг: Цена: 27950.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explains mechanical and thermal reliability for modern memory packaging, considering materials, processes, and manufacturing. In the past 40 years, memory packaging processes have evolved enormously. This book discusses the reliability and technical challenges of first-level interconnect materials, packaging processes, advanced specialty reliability testing, and characterization of interconnects. It also examines the reliability of wire bonding, lead-free solder joints such as reliability testing and data analyses, design for reliability in hybrid packaging and HBM packaging, and failure analyses. The specialty of this book is that the materials covered are not only for second-level interconnects, but also for packaging assembly on first-level interconnects and for the semiconductor back-end on 2.5D and 3D memory interconnects. This book can be used as a text for college and graduate students who have the potential to become our future leaders, scientists, and engineers in the electronics and semiconductor industry.
Автор: Chauhan,Yogesh Singh Название: Gan Transistor Modeling For Rf And Power Electronics ISBN: 0323998712 ISBN-13(EAN): 9780323998710 Издательство: Elsevier Science Рейтинг: Цена: 27791.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Pearton, Stephen J. Название: GaN and Related Materials ISBN: 9056995170 ISBN-13(EAN): 9789056995171 Издательство: Taylor&Francis Рейтинг: Цена: 15004.00 р. Наличие на складе: Поставка под заказ.
Автор: Khandelwal Название: Advanced SPICE Model for GaN HEMTs (ASM-HEMT) ISBN: 3030777324 ISBN-13(EAN): 9783030777326 Издательство: Springer Рейтинг: Цена: 11878.00 р. Наличие на складе: Поставка под заказ.
Описание: This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. * Describes in detail a new industry standard for GaN-based power and RF circuit design; * Includes discussion of practical problems and their solutions in GaN device modeling; * Covers both radio-frequency (RF) and power electronics application of GaN technology; * Describes modeling of both GaN RF and power devices.
Автор: Seidel Achim, Wicht Bernhard Название: Highly Integrated Gate Drivers for Si and GaN Power Transistors ISBN: 3030689425 ISBN-13(EAN): 9783030689421 Издательство: Springer Рейтинг: Цена: 11878.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
Описание: This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. * Describes in detail a new industry standard for GaN-based power and RF circuit design; * Includes discussion of practical problems and their solutions in GaN device modeling; * Covers both radio-frequency (RF) and power electronics application of GaN technology; * Describes modeling of both GaN RF and power devices.
Автор: Gan Woon Siong Название: Gauge Invariance Approach to Acoustic Fields ISBN: 9811387532 ISBN-13(EAN): 9789811387531 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book highlights the symmetry properties of acoustic fields and describes the gauge invariance approach, which can be used to reveal those properties. This is followed by descriptions of global gauge invariance (isotropy), and of local gauge invariance (anisotropy).
Автор: Fay Patrick, Jena Debdeep, Maki Paul Название: High-Frequency Gan Electronic Devices ISBN: 3030202100 ISBN-13(EAN): 9783030202101 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Chapter 1. Introduction.- Chapter 2.High Power High Frequency Transistors: A Materials Perspective.- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds.- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors.- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA).- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications.- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices.- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures.- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes.- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.
Автор: Seidel Achim, Wicht Bernhard Название: Highly Integrated Gate Drivers for Si and Gan Power Transistors ISBN: 3030689395 ISBN-13(EAN): 9783030689391 Издательство: Springer Цена: 11878.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
Название: Gallium Nitride (GaN) ISBN: 1482220032 ISBN-13(EAN): 9781482220032 Издательство: Taylor&Francis Рейтинг: Цена: 33686.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Addresses a Growing Need for High-Power and High-Frequency Transistors
Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.
Explores Recent Progress in High-Frequency GaN Technology
Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.
In addition, the authors:
Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects
Examine GaN technology while in its early stages of high-volume deployment in commercial and military products
Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology
Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers
A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Название: Handbook Of Gan Semiconductor Mater ISBN: 1498747132 ISBN-13(EAN): 9781498747134 Издательство: Taylor&Francis Рейтинг: Цена: 41342.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It covers the basics of semiconductor materials, physics, growth and characterization techniques.
Описание: The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits, and description of fabrication technologies.
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