Gan Transistor Modeling For Rf And Power Electronics, Chauhan,Yogesh Singh

Автор: Bahl, Inder
Название: Fundamentals of rf and microwave transistor amplifiers
ISBN: 0470391669 ISBN-13(EAN): 9780470391662
Издательство: Wiley
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Цена: 25336.00 р.
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Описание: Includes extensive design information in the form of equations, tables, graphs and examples. Offers an in-depth study of amplifiers. Simple design equations are included to help understand design concepts. Practical and simple to understand examples with over 70 fully solved.

Автор: Wladyslaw Grabinski; Bart Nauwelaers; Dominique Sc
Название: Transistor Level Modeling for Analog/RF IC Design
ISBN: 9048171482 ISBN-13(EAN): 9789048171484
Издательство: Springer
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Цена: 15672.00 р.
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Описание: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.

Автор: Supriya Karmakar
Название: Novel Three-state Quantum Dot Gate Field Effect Transistor
ISBN: 8132216342 ISBN-13(EAN): 9788132216346
Издательство: Springer
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Цена: 18167.00 р.
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Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.

Автор: Supriya Karmakar
Название: Novel Three-state Quantum Dot Gate Field Effect Transistor
ISBN: 8132234901 ISBN-13(EAN): 9788132234906
Издательство: Springer
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Цена: 14365.00 р.
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Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.

Автор: Keng C. Wu
Название: Transistor Circuits for Spacecraft Power System
ISBN: 1461353858 ISBN-13(EAN): 9781461353850
Издательство: Springer
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Цена: 20962.00 р.
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Описание: As a stand-alone volume, Transistor Circuits For Spacecraft Power System presents numerous transistor circuits and building blocks associated with power electronics in general, and examines the major subsystem components for solar-based spacecraft power systems.

Автор: Seidel Achim, Wicht Bernhard
Название: Highly Integrated Gate Drivers for Si and Gan Power Transistors
ISBN: 3030689395 ISBN-13(EAN): 9783030689391
Издательство: Springer
Цена: 11878.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.

Автор: Seidel Achim, Wicht Bernhard
Название: Highly Integrated Gate Drivers for Si and GaN Power Transistors
ISBN: 3030689425 ISBN-13(EAN): 9783030689421
Издательство: Springer
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Цена: 11878.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.

Автор: Amara Amara; Olivier Rozeau
Название: Planar Double-Gate Transistor
ISBN: 9048181089 ISBN-13(EAN): 9789048181087
Издательство: Springer
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Цена: 21661.00 р.
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Описание: The aim of the editors here is to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary circuits. The goal is to point out how we can apply new transistor structures to come up with new cells and concepts.

Автор: Tigelaar Howard
Название: How Transistor Area Shrank by 1 Million Fold
ISBN: 3030400239 ISBN-13(EAN): 9783030400231
Издательство: Springer
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Цена: 6986.00 р.
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Описание: He describes for readers the key inventions and developments in science and engineering that overcame huge obstacles, enabling engineers to shrink transistor area by over 1 million fold and build billions of transistor switches that switch over a billion times a second, all on a piece of silicon smaller than a thumbnail.

Автор: Zhang Lining, Chan Mansun
Название: Tunneling Field Effect Transistor Technology
ISBN: 3319810871 ISBN-13(EAN): 9783319810874
Издательство: Springer
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Цена: 13974.00 р.
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Описание: This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs). Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.

Автор: Ritchie, Gordon J. (university Of York, Uk)
Название: Transistor circuit techniques
ISBN: 0748740759 ISBN-13(EAN): 9780748740758
Издательство: Taylor&Francis
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Цена: 10258.00 р.
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Описание: One of a series intended for first- and second-year undergraduate courses, this text provides coverage of the design of both discrete and integrated electronic circuits. It guides students through the analysis and design of transistor circuits, using worked examples and design examples.

Автор: Lining Zhang; Mansun Chan
Название: Tunneling Field Effect Transistor Technology
ISBN: 3319316516 ISBN-13(EAN): 9783319316512
Издательство: Springer
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Цена: 16070.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.