How Transistor Area Shrank by 1 Million Fold, Tigelaar Howard

Автор: Bahl, Inder
Название: Fundamentals of rf and microwave transistor amplifiers
ISBN: 0470391669 ISBN-13(EAN): 9780470391662
Издательство: Wiley
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Цена: 25336.00 р.
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Описание: Includes extensive design information in the form of equations, tables, graphs and examples. Offers an in-depth study of amplifiers. Simple design equations are included to help understand design concepts. Practical and simple to understand examples with over 70 fully solved.

Автор: Zhang Lining, Chan Mansun
Название: Tunneling Field Effect Transistor Technology
ISBN: 3319810871 ISBN-13(EAN): 9783319810874
Издательство: Springer
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Цена: 13974.00 р.
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Описание: This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs). Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.

Автор: Keng C. Wu
Название: Transistor Circuits for Spacecraft Power System
ISBN: 1461353858 ISBN-13(EAN): 9781461353850
Издательство: Springer
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Цена: 20962.00 р.
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Описание: As a stand-alone volume, Transistor Circuits For Spacecraft Power System presents numerous transistor circuits and building blocks associated with power electronics in general, and examines the major subsystem components for solar-based spacecraft power systems.

Автор: Nirmal D., Ajayan J.
Название: Handbook for III-V High Electron Mobility Transistor Technologies
ISBN: 0367729245 ISBN-13(EAN): 9780367729240
Издательство: Taylor&Francis
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Цена: 8114.00 р.
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Описание: The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.

Автор: Prakash Gopalakrishnan; Rob A. Rutenbar
Название: Direct Transistor-Level Layout for Digital Blocks
ISBN: 1475779518 ISBN-13(EAN): 9781475779516
Издательство: Springer
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Цена: 13974.00 р.
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Описание: The approach described in this book can pack devices much more densely than a typical cell-based layout.Direct Transistor-Level Layout For Digital Blocks is a comprehensive reference work on device-level layout optimization, which will be valuable to CAD tool and circuit designers.

Автор: Park Byung-Eun, Ishiwara Hiroshi, Okuyama Masanori
Название: Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
ISBN: 9811512116 ISBN-13(EAN): 9789811512117
Издательство: Springer
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Цена: 20962.00 р.
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Описание: This book is intended for periodontal residents and practicing periodontists who wish to incorporate the principles of moderate sedation into daily practice. Comprehensive airway management and rescue skills are then documented in detail so that the patient may be properly managed in the event that the sedation progresses beyond the intended level.

Автор: Wladyslaw Grabinski; Bart Nauwelaers; Dominique Sc
Название: Transistor Level Modeling for Analog/RF IC Design
ISBN: 9048171482 ISBN-13(EAN): 9789048171484
Издательство: Springer
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Цена: 15672.00 р.
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Описание: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.

Автор: Ritchie, Gordon J. (university Of York, Uk)
Название: Transistor circuit techniques
ISBN: 0748740759 ISBN-13(EAN): 9780748740758
Издательство: Taylor&Francis
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Цена: 10258.00 р.
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Описание: One of a series intended for first- and second-year undergraduate courses, this text provides coverage of the design of both discrete and integrated electronic circuits. It guides students through the analysis and design of transistor circuits, using worked examples and design examples.

Автор: Tigelaar, Howard
Название: How transistor area shrank by 1 million fold
ISBN: 3030400204 ISBN-13(EAN): 9783030400200
Издательство: Springer
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Цена: 6986.00 р.
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Описание: He describes for readers the key inventions and developments in science and engineering that overcame huge obstacles, enabling engineers to shrink transistor area by over 1 million fold and build billions of transistor switches that switch over a billion times a second, all on a piece of silicon smaller than a thumbnail.

Автор: Wilhelmus Th. H. Hetterscheid
Название: Designing Transistor I.F. Amplifiers
ISBN: 3662386720 ISBN-13(EAN): 9783662386729
Издательство: Springer
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Цена: 11179.00 р.
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Автор: Lining Zhang; Mansun Chan
Название: Tunneling Field Effect Transistor Technology
ISBN: 3319316516 ISBN-13(EAN): 9783319316512
Издательство: Springer
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Цена: 16070.00 р.
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Описание: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

Автор: Supriya Karmakar
Название: Novel Three-state Quantum Dot Gate Field Effect Transistor
ISBN: 8132234901 ISBN-13(EAN): 9788132234906
Издательство: Springer
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Цена: 14365.00 р.
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Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.