Описание: Written by a leading author on the subject, PID and Predictive Control of Electric Drives and Power Supplies using MATLAB / Simulink provides a timely introduction to current research on PID and predictive control.
Название: Gallium Nitride (GaN) ISBN: 1482220032 ISBN-13(EAN): 9781482220032 Издательство: Taylor&Francis Рейтинг: Цена: 33686.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Addresses a Growing Need for High-Power and High-Frequency Transistors
Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.
Explores Recent Progress in High-Frequency GaN Technology
Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.
In addition, the authors:
Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects
Examine GaN technology while in its early stages of high-volume deployment in commercial and military products
Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology
Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers
A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Автор: Kaufmann Название: Monolithic Integration in E-Mode GaN Technology ISBN: 3031156242 ISBN-13(EAN): 9783031156243 Издательство: Springer Рейтинг: Цена: 8384.00 р. Наличие на складе: Поставка под заказ.
Описание: This book is a comprehensive, all-in-one source on design of monolithic GaN power ICs. It is written in handbook style with systematic guidelines and includes implementation examples. It covers the full range from technology fundamentals to implementation details including design techniques specific for GaN technology. It provides a detailed loss analysis based on comparative measurements between silicon and GaN based converters to provide an understanding of the relations between design choices and results which can be transferred to other power converter systems.
Автор: Seidel Achim, Wicht Bernhard Название: Highly Integrated Gate Drivers for Si and Gan Power Transistors ISBN: 3030689395 ISBN-13(EAN): 9783030689391 Издательство: Springer Цена: 11878.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
Автор: Seidel Achim, Wicht Bernhard Название: Highly Integrated Gate Drivers for Si and GaN Power Transistors ISBN: 3030689425 ISBN-13(EAN): 9783030689421 Издательство: Springer Рейтинг: Цена: 11878.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
Описание: This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. * Describes in detail a new industry standard for GaN-based power and RF circuit design; * Includes discussion of practical problems and their solutions in GaN device modeling; * Covers both radio-frequency (RF) and power electronics application of GaN technology; * Describes modeling of both GaN RF and power devices.
Описание: High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters.Features:Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs.Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency responseIllustrates noise characterization of optimized indium arsenide HEMTsIntroduces terahertz electronics including sources for terahertz applications.This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Автор: Lenka Название: HEMT Technology and Applications ISBN: 9811921644 ISBN-13(EAN): 9789811921643 Издательство: Springer Рейтинг: Цена: 23757.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Автор: Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zan Название: Power GaN Devices ISBN: 3319827561 ISBN-13(EAN): 9783319827568 Издательство: Springer Рейтинг: Цена: 23757.00 р. Наличие на складе: Поставка под заказ.
Описание: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field.
Название: Handbook Of Gan Semiconductor Mater ISBN: 1498747132 ISBN-13(EAN): 9781498747134 Издательство: Taylor&Francis Рейтинг: Цена: 41342.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It covers the basics of semiconductor materials, physics, growth and characterization techniques.
Описание: The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits, and description of fabrication technologies.
Автор: Fay Patrick, Jena Debdeep, Maki Paul Название: High-Frequency Gan Electronic Devices ISBN: 3030202100 ISBN-13(EAN): 9783030202101 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Chapter 1. Introduction.- Chapter 2.High Power High Frequency Transistors: A Materials Perspective.- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds.- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors.- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA).- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications.- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices.- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures.- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes.- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.
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