Ion Implantation in Diamond, Graphite and Related Materials, M.S. Dresselhaus; R. Kalish

Автор: Michael Nastasi; James W. Mayer
Название: Ion Implantation and Synthesis of Materials
ISBN: 3642062598 ISBN-13(EAN): 9783642062599
Издательство: Springer
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Описание: Ion implantation is one of the key processing steps in silicon integrated circuit technology. This book presents the physics and materials science of ion implantation and ion beam modification of materials.

Автор: Billy Crowder
Название: Ion Implantation in Semiconductors and Other Materials
ISBN: 1468420666 ISBN-13(EAN): 9781468420661
Издательство: Springer
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Описание: During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area.

Автор: H. Ryssel; H. Glawischnig
Название: Ion Implantation: Equipment and Techniques
ISBN: 3642691587 ISBN-13(EAN): 9783642691584
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Описание: The Fourth International Conference on Ion Implantation: Equipment and Tech- niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica- tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe- cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.

Автор: Fred Chernow
Название: Ion Implantation in Semiconductors 1976
ISBN: 1461341981 ISBN-13(EAN): 9781461341987
Издательство: Springer
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Описание: The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976.

Автор: Emanuele Rimini
Название: Ion Implantation: Basics to Device Fabrication
ISBN: 0792395204 ISBN-13(EAN): 9780792395201
Издательство: Springer
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Описание: A collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics.

Автор: K. Bruce Winterbon
Название: Ion Implantation Range and Energy Deposition Distributions
ISBN: 1475756143 ISBN-13(EAN): 9781475756142
Издательство: Springer
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Автор: Susumu Namba
Название: Ion Implantation in Semiconductors
ISBN: 1468421530 ISBN-13(EAN): 9781468421538
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Описание: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974.

Автор: H. Ryssel; H. Glawischnig
Название: Ion Implantation Techniques
ISBN: 3642687814 ISBN-13(EAN): 9783642687815
Издательство: Springer
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Описание: In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech- niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech- niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan- tation conference for the first time. This implantation school concentra- ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con- trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap- ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec- tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.

Автор: A. H. Agajanian
Название: Ion Implantation in Microelectronics
ISBN: 1468461346 ISBN-13(EAN): 9781468461343
Издательство: Springer
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Описание: During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index.

Автор: Ingolf Ruge; J. Graul
Название: Ion Implantation in Semiconductors
ISBN: 3642806627 ISBN-13(EAN): 9783642806629
Издательство: Springer
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Описание: In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California.

Автор: Emanuele Rimini
Название: Ion Implantation: Basics to Device Fabrication
ISBN: 146135952X ISBN-13(EAN): 9781461359524
Издательство: Springer
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Описание: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics.